JPS60231331A - Formation of lift-off pattern - Google Patents
Formation of lift-off patternInfo
- Publication number
- JPS60231331A JPS60231331A JP8719484A JP8719484A JPS60231331A JP S60231331 A JPS60231331 A JP S60231331A JP 8719484 A JP8719484 A JP 8719484A JP 8719484 A JP8719484 A JP 8719484A JP S60231331 A JPS60231331 A JP S60231331A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- thin film
- film
- lift
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 claims abstract description 61
- 239000010408 film Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000059 patterning Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
（ａｌ 発明の技術分野
本発明はリフトオフ・パターンの形成方法に係り、特に
側面が垂直面をなす薄膜パターンをリフトオフ法により
精度良く形成し得る、長さ寸法精度の良い庇を有し、か
つレジスト膜パターン側面が略垂直面をなすリフトオフ
・パターンの形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (al) Technical Field of the Invention The present invention relates to a method for forming a lift-off pattern, and in particular to a method for forming a lift-off pattern, which can form a thin film pattern with vertical side surfaces with high accuracy by a lift-off method, and has good length dimension accuracy. The present invention relates to a method for forming a lift-off pattern that has an eave and has a resist film pattern side surface that is substantially vertical.
ｆｂ） 技術の背景
薄膜磁気ヘッドや半導体集積回路等を製造する場合、フ
ナ１−リソグラフィ技術を用いて各種の微細な薄膜パタ
ーンを形成する一方法として、例えば基板上の微細な薄
膜パターンを形成ずべき部分以外の領域にあらかじめレ
ジスト膜を被着しておき、かかる基板上の全面に金属薄
膜等を付着させた後、レジスト膜を除去すると共に該レ
ジスト膜上の金属薄膜を除去して所望の微細な薄膜パタ
ーンを形成するリフトオフ法が知られている。fb) Background of the technology When manufacturing thin film magnetic heads, semiconductor integrated circuits, etc., one method of forming various fine thin film patterns using lithography technology is, for example, a method that does not form fine thin film patterns on a substrate. A resist film is previously deposited on areas other than the desired areas, and a metal thin film is deposited on the entire surface of the substrate, and then the resist film is removed and the metal thin film on the resist film is removed to form the desired area. A lift-off method for forming fine thin film patterns is known.
一般にこのリフトオフ法によって比較的膜厚の薄い薄膜
パターンを形成する場合にはそのパターン幅精度は良い
が、膜厚が厚くなるに従って形成された薄膜パターンの
側面が傾斜状となりパターン幅精度を確保することが困
難になる。Generally, when forming a thin film pattern with a relatively thin film thickness using this lift-off method, the pattern width accuracy is good, but as the film thickness increases, the side surfaces of the formed thin film pattern become sloped, ensuring pattern width accuracy. Things become difficult.
（Ｃ１従来技術と問題点
即ち、従来のリフトオフ法においては、先ず第１図に示
すように基板１上にレジスト膜２を塗着し、該レジスト
膜２上に所定のパターンを有するフォトマスク３を配置
する。(C1 Prior art and problems: In the conventional lift-off method, first, as shown in FIG. 1, a resist film 2 is coated on a substrate 1, and a photomask 3 having a predetermined pattern is formed on the resist film 2. Place.
次に第２図に示すように該フォトマスク３を介してレジ
スト膜２を選択的に露光・現像を行って所定のパターン
４にパターニングする。この時、形成されたレジスト膜
パターン４は第２１Ｄに示ｔようにレジスト膜２と該レ
ジスト膜２上に配置されたフォトマスク３との間の極め
て僅かな間隙での露光時の光の回折現象により、そのパ
ターン側面が傾斜面となる不都合がある。Next, as shown in FIG. 2, the resist film 2 is selectively exposed and developed through the photomask 3 to form a predetermined pattern 4. At this time, the formed resist film pattern 4 is caused by the diffraction of light during exposure in a very small gap between the resist film 2 and the photomask 3 placed on the resist film 2, as shown in 21D. Due to this phenomenon, there is an inconvenience that the side surface of the pattern becomes an inclined surface.
従ってその後、第３図に示すように前記レジスト膜パタ
ーン４が形成された基板１上の全面に金属薄膜５を被着
した際に、該金属薄膜５が前記レジスト膜パターン４の
傾斜面にも被着されることから、前記レジスト膜２を除
去すると共に該レジスト膜２上の金属薄膜５を除去する
所謂リフトオフを行うと、第４図に示すように基板１上
にパターン側面が傾斜状をなすパターン幅精度の低下し
た金属薄膜パターン６が形成されることになる。Therefore, when the metal thin film 5 is deposited on the entire surface of the substrate 1 on which the resist film pattern 4 is formed, as shown in FIG. Therefore, when the resist film 2 is removed and the metal thin film 5 on the resist film 2 is removed, so-called lift-off is performed, the side surface of the pattern becomes inclined on the substrate 1 as shown in FIG. A metal thin film pattern 6 with reduced pattern width accuracy is thus formed.
このようなことからパターン側面が垂直なパターン幅精
度の良い薄膜パターンを、その膜厚にあまり左右されず
にリフトオフ法によって容易に形成することができるリ
フトオフ・パターンの形成方法が要望されている。For this reason, there is a need for a method for forming a lift-off pattern that can easily form a thin film pattern with perpendicular side surfaces and a high precision of pattern width by the lift-off method without being greatly influenced by the film thickness.
（ｄｌ 発明の目的
本発明は上記従来の実情に鑑み、膜厚が比較的厚く、か
つパターン側面が垂直なパターン幅精度の良い薄膜パタ
ーンをリフトオフ法によって容易に形成することができ
る新規なリフトオフ・パターンの形成方法を提供するこ
とを目的とするものである。(dl) Purpose of the Invention In view of the above-mentioned conventional circumstances, the present invention provides a novel lift-off method that can easily form a thin film pattern with a relatively thick film thickness, vertical pattern side surfaces, and good pattern width accuracy by a lift-off method. The object of the present invention is to provide a method for forming a pattern.
（ｅｌ 発明の構成
そしてこの目的は本発明によれば、基板上にレジスト腹
と該レジスト膜を露光する光線が透過する透明薄膜及び
同じく該レジスト膜を露光する光線に対して不透明な遮
光性薄膜とを順次積層形成する工程と、該遮光性薄膜を
所定のパターンにパターニングする工程と、上記遮光性
薄膜の所定パターン内に露出した透明薄膜を、該遮光性
薄膜の所定パターンよりも小さいパターンにパターニン
グする工程と、該遮光性薄膜パターンをマスクにして透
明薄膜を介し、レジスト膜を選択的に露光・現像してパ
ターニングする工程とを行い、透明薄膜による庇を有す
るレジスト膜パターンを形成することを特徴とするリフ
トオフ・パターンの形成方法を提供することによって達
成される。According to the present invention, there is provided a resist film on a substrate, a transparent thin film through which a light beam exposing the resist film passes, and a light-shielding thin film opaque to the light beam exposing the resist film. and patterning the light-shielding thin film into a predetermined pattern, and forming the transparent thin film exposed within the predetermined pattern of the light-shielding thin film into a pattern smaller than the predetermined pattern of the light-shielding thin film. A step of patterning and a step of selectively exposing and developing the resist film through the transparent thin film using the light-shielding thin film pattern as a mask to form a resist film pattern having an eaves made of the transparent thin film. This is achieved by providing a method for forming a lift-off pattern characterized by:
（ｆｌ 発明の実施例
以下図面を用いて本発明の実施例について詳細に説明す
る。(fl Embodiments of the Invention Below, embodiments of the present invention will be described in detail with reference to the drawings.
第５図乃至第１０図は本発明に係るリフトオフ・パター
ンの形成方法の一実施例を工程順に示す要部断面図であ
る。FIGS. 5 to 10 are cross-sectional views of essential parts showing step-by-step an embodiment of the lift-off pattern forming method according to the present invention.
先ず第５図に示すように基板１１上に例えばポジ型フォ
トレジストを４μｍの厚さに塗布し、感光性を損なわな
い温度でプリベークしてレジスト膜１２を形成する。そ
の上に該レジスト膜１２を露光する光線が透過する０、
２μｍ程度の膜厚の二酸化珪素（Ｓ１０２）からなる透
明薄膜１３及び同じく該レジスト膜１２を露光する光線
に対して不透明な０．２μｍ程度の膜厚のアルミニウム
（ＡＩ）からなる遮光性薄膜１４とを順次積層形成する
。First, as shown in FIG. 5, a positive photoresist, for example, is applied to a thickness of 4 μm on a substrate 11, and prebaked at a temperature that does not impair photosensitivity to form a resist film 12. 0 on which the light beam exposing the resist film 12 is transmitted;
A transparent thin film 13 made of silicon dioxide (S102) with a thickness of about 2 μm, and a light-shielding thin film 14 made of aluminum (AI) with a thickness of about 0.2 μm, which is also opaque to the light beam that exposes the resist film 12. are sequentially laminated.
次に第６図に示すようにフォトエツチング工程により該
遮光性薄膜１４を所定のパターン１５にパターニングす
る。次に上記遮光性薄膜１４の所定パターン１５内に露
出した透明薄膜１３を第７図に示すように該遮光性薄膜
１４の所定パターン１５よりも僅かに小さい所定パター
ン１６に弗酸（ＩＩＦ）系のエツチング液、又は四弗化
炭素（ＣＦ２ ）ガスによるプラズマエツチングを用い
たフォトエツチング工程によりパターニングする。Next, as shown in FIG. 6, the light-shielding thin film 14 is patterned into a predetermined pattern 15 by a photo-etching process. Next, as shown in FIG. 7, the transparent thin film 13 exposed within the predetermined pattern 15 of the light-shielding thin film 14 is formed into a predetermined pattern 16 slightly smaller than the predetermined pattern 15 of the light-shielding thin film 14 using hydrofluoric acid (IIF). The patterning is performed by a photo-etching process using an etching solution or plasma etching using carbon tetrafluoride (CF2) gas.
しかる後、レジスト膜１２上に透明薄膜パターン１６を
介して従来の如きギャップがないように密着された前記
遮光性薄膜パターン１５をマスクにして該透明薄膜パタ
ーン１６を介し、その直下のレジスト膜１２を選択的に
露光・現像してパターニングすることにより、第８図に
示すように透明薄ＩＩ！１３からなる所定長さ寸法の微
小な庇１６ａが設けられ、かつパターンエツジが垂直な
形状を有する目的とするリフトオフ・パターン１７を形
成することができる。Thereafter, using the light-shielding thin film pattern 15, which is tightly adhered to the resist film 12 via the transparent thin film pattern 16 without any gap as in the conventional case, as a mask, the resist film 12 immediately below it is coated via the transparent thin film pattern 16. By selectively exposing, developing and patterning, as shown in FIG. 8, transparent thin II! A target lift-off pattern 17 can be formed in which a minute eave 16a having a predetermined length dimension consisting of 13 is provided and the pattern edge has a vertical shape.
従って以下第９図に示すように上記リフトオフ・パター
ン１７が形成された基板１１上の全面に、例えば銅（Ｃ
ｕ）等からなる金属薄膜１８を被着した後、前記レジス
ト膜１２を除去すると共に該レジスト膜１２上の透明薄
膜１３、遮光性薄膜１４及び金属薄膜１８を除去する所
謂リフトオフを行うことにより、第１０図に示すように
基板１１上に膜厚が比較的厚くかつパターン側面が垂直
形状をなすパターン幅精度の良い金属薄膜パターン１９
を形成することが可能となる。Therefore, as shown in FIG. 9, for example, copper (C
After depositing the metal thin film 18 consisting of u), etc., the resist film 12 is removed, and the transparent thin film 13, the light-shielding thin film 14, and the metal thin film 18 on the resist film 12 are removed by performing a so-called lift-off. As shown in FIG. 10, a metal thin film pattern 19 with a relatively thick film thickness and a vertical pattern side surface with good pattern width accuracy is placed on the substrate 11.
It becomes possible to form.
（ｇ＋ 発明の効果
以上の説明から明らかなように、本発明に係るリフトオ
フ・パターンの形成方法によれば、膜厚が比較的厚く、
かつパターン側面が垂直なパターン幅精度の良い薄膜パ
ターンをリフトオフ法によって容易に形成することを可
能とする、高精度な長さ寸法の庇を有し、かつパターン
エツジが垂直な形状のリフトオフ・パターンを容易に得
ることができる利点がある。(g+ Effects of the Invention As is clear from the above explanation, according to the method for forming a lift-off pattern according to the present invention, the film thickness is relatively thick.
A lift-off pattern that has an eave with highly accurate length dimensions and a vertical pattern edge that makes it possible to easily form a thin film pattern with vertical pattern width precision by the lift-off method. It has the advantage of being easy to obtain.
従って各種微細薄膜パターンをリフトオフ法によって形
成する工程に適用して極めて有利である。Therefore, it is extremely advantageous to apply it to the process of forming various fine thin film patterns by the lift-off method.
第１図乃至第４図は従来のリフトオフ・パターンの形成
方法を工程順に説明するための要部断面図、第５図乃至
第１０図は本発明のリフトオフ・パターンの形成方法の
一実施例を工程順に示す要部断面図である。
図面において、１１は基板、１２はレジスト膜、１３は
透明薄膜、１４は遮光性薄膜、１５は遮光性薄膜パター
ン、１６は透明薄膜パターン、１６ａは庇、１７はリフ
トオフ・パターン、１８は金属薄膜、１９は金属薄膜パ
ターンを示す。
第１図
第２図
第３図
第４図
第５図
第６図
１ち
第７図1 to 4 are cross-sectional views of main parts for explaining the conventional lift-off pattern forming method step by step, and FIGS. 5 to 10 show an embodiment of the lift-off pattern forming method of the present invention. FIG. 3 is a cross-sectional view of main parts shown in the order of steps. In the drawing, 11 is a substrate, 12 is a resist film, 13 is a transparent thin film, 14 is a light-shielding thin film, 15 is a light-shielding thin film pattern, 16 is a transparent thin film pattern, 16a is an eaves, 17 is a lift-off pattern, and 18 is a metal thin film. , 19 indicates a metal thin film pattern. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 1-7
Claims (1)
過する透明薄膜及び同じく該レジスト膜を露光する光線
に対して不透明な遮光性薄膜とを順次積層形成する工程
と、該遮光性薄膜を所定のパターンにパターニングする
工程と、上記遮光性薄膜の所定パターン内に露出した透
明薄膜を該遮光性薄膜の所定パターンよりも小さいパタ
ーンにパターニングする工程と、該遮光性薄膜パターン
をマスクにして透明薄膜パターンを介し、レジスト膜を
選択的に露光・現像してパターニングする工程とを行い
、透明薄膜による庇を有するレジスト膜パターンを形成
することを特徴とするリフトオフ・パターンの形成方法
。A step of sequentially laminating a resist film, a transparent thin film through which the light beam exposing the resist film is transmitted, and a light-shielding thin film that is opaque to the light beam exposing the resist film on a substrate, and depositing the light-shielding thin film in a predetermined manner. patterning the transparent thin film exposed within the predetermined pattern of the light-shielding thin film into a pattern smaller than the predetermined pattern of the light-shielding thin film, and using the light-shielding thin film pattern as a mask to form the transparent thin film. 1. A method for forming a lift-off pattern, which comprises forming a resist film pattern having an eave made of a transparent thin film by patterning the resist film by selectively exposing and developing the resist film through the pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8719484A JPS60231331A (en) | 1984-04-27 | 1984-04-27 | Formation of lift-off pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8719484A JPS60231331A (en) | 1984-04-27 | 1984-04-27 | Formation of lift-off pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60231331A true JPS60231331A (en) | 1985-11-16 |
Family
ID=13908170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8719484A Pending JPS60231331A (en) | 1984-04-27 | 1984-04-27 | Formation of lift-off pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60231331A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5006478A (en) * | 1989-07-25 | 1991-04-09 | Sony Corporation | Method for manufacture of semiconductor device |
| US5096846A (en) * | 1990-11-02 | 1992-03-17 | Texas Instruments Incorporated | Method of forming a quantum effect switching device |
-
1984
- 1984-04-27 JP JP8719484A patent/JPS60231331A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5006478A (en) * | 1989-07-25 | 1991-04-09 | Sony Corporation | Method for manufacture of semiconductor device |
| US5096846A (en) * | 1990-11-02 | 1992-03-17 | Texas Instruments Incorporated | Method of forming a quantum effect switching device |
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