JPH0525168B2 - - Google Patents
Info
- Publication number
- JPH0525168B2 JPH0525168B2 JP60084818A JP8481885A JPH0525168B2 JP H0525168 B2 JPH0525168 B2 JP H0525168B2 JP 60084818 A JP60084818 A JP 60084818A JP 8481885 A JP8481885 A JP 8481885A JP H0525168 B2 JPH0525168 B2 JP H0525168B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- photomask
- resist pattern
- auxiliary
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 239000010408 film Substances 0.000 description 9
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明は、微細パターンの形成方法、特に密着
露光法によつて微細パターンを高精度で且つ生産
性良く形成可能にした微細パターンの形成方法に
関するものである。[Detailed Description of the Invention] (a) Field of Industrial Application The present invention relates to a method for forming a fine pattern, particularly a method for forming a fine pattern in which a fine pattern can be formed with high precision and high productivity by a contact exposure method. It is about the method.
(ロ) 従来の技術
一般に半導体素子、磁気バルブ素子及び表面弾
性波素子及び薄膜磁気ヘツド等のパターンに高精
度を要求される微細パターンの形成方法において
フオトマスクパターンをウエハ上に転写させる場
合、ポジ型フオトレジスト（以下、単にフオトレ
ジストと称す）を用いて密着露光する方法が採用
されている。この場合、フオトレジストに光を照
射するとフオトレジストに含有されている感光基
が光分解してN2ガスを放出し、これが原因とな
つてウエハ上に塗布されたフオトレジスト膜から
フオトマスクが離れる所謂密着不良を引き起こす
ことが既に知られている。そして、この密着不良
が発生すると光フレネル回析現象により、レジス
トパターンの寸法を変化させたりパターン形状の
変形を発生させ精度の高い微細パターンが得られ
ないと謂う欠点があつた。この問題を解決するた
めに、露光時間を短くしてN2ガスが発生する前
に露光を完了させると謂う方法が特開昭58−
80836号公報にて提案されている。(B) Prior art In general, when a photomask pattern is transferred onto a wafer in a method for forming fine patterns that require high precision in patterns for semiconductor devices, magnetic valve devices, surface acoustic wave devices, thin film magnetic heads, etc., positive A method of contact exposure using a type photoresist (hereinafter simply referred to as photoresist) has been adopted. In this case, when the photoresist is irradiated with light, the photosensitive groups contained in the photoresist photodecompose and release N2 gas, which causes the photomask to separate from the photoresist film coated on the wafer. It is already known that it causes poor adhesion. When this poor adhesion occurs, the dimensions of the resist pattern change or the shape of the pattern is deformed due to the optical Fresnel diffraction phenomenon, resulting in a drawback that a fine pattern with high precision cannot be obtained. In order to solve this problem, a method was proposed in Japanese Patent Laid-Open No. 1983-111 that shortened the exposure time and completed the exposure before N2 gas was generated.
This is proposed in Publication No. 80836.
(ハ) 発明が解決しようとする問題点
今、斯るレジストパターン形成方法においてフ
オトレジストが光によつて分解する過程を考えれ
ば次式の様な感光反応を起こして現像液に可溶と
なつている。(c) Problems to be Solved by the Invention Now, if we consider the process in which the photoresist is decomposed by light in such a resist pattern forming method, the photoresist undergoes a photosensitive reaction as shown in the following formula and becomes soluble in the developer. ing.
つまり、フオトレジストに光を照射するとN2
ガスが発生することにより感光反応が進み、所望
のレジストパターンが得られることになる。この
ことから上記特開昭58−80836号公報によるレジ
ストパターン形成方法では、上式の感光反応途中
でその反応を中止することになるため、本来感光
されるべき部分に未反応フオトレジストが残る虞
れがありパターン精度の悪化につながつていた。
実際、上記特開昭58−80836号公報に示されてい
る実施例のようにフオトレジスト膜厚約1μｍの
ものを露光時間２秒で感光した結果、パターンの
回りには未反応のフオトレジストが残つているの
が確認された。 In other words, when the photoresist is irradiated with light, N2
As the gas is generated, the photosensitive reaction progresses and a desired resist pattern is obtained. For this reason, in the resist pattern forming method disclosed in JP-A No. 58-80836, since the photoresist reaction of the above formula is stopped midway through, there is a risk that unreacted photoresist may remain in the area that should originally be exposed. This led to deterioration of pattern accuracy.
In fact, as in the example shown in the above-mentioned JP-A-58-80836, when a photoresist film with a thickness of about 1 μm was exposed with an exposure time of 2 seconds, unreacted photoresist remained around the pattern. It was confirmed that it remained.
(ニ) 問題点を解決するための手段
本発明は上記した問題点を解決するために、ウ
エハ上にフオトレジストを塗布し、そのフオトレ
ジスト膜上に所望のフオトマスクパターンが形成
されたフオトマスクを密着して露光することによ
りウエハ上に所望のレジストパターンを形成する
微細パターンの形成方法において、先ず所望のフ
オトマスクパターンを概略覆う補助フオトマスク
パターンが形成された補助フオトマスクで露光を
行なつて一旦補助レジストパターンを形成し、そ
の後所望のフオトマスクパターンが形成されたフ
オトマスクで露光を行なつて所望のレジストパタ
ーンを形成するようにしたものである。(d) Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a photomask in which a photoresist is applied onto a wafer and a desired photomask pattern is formed on the photoresist film. In a fine pattern forming method in which a desired resist pattern is formed on a wafer by close exposure, first exposure is performed using an auxiliary photomask on which an auxiliary photomask pattern that roughly covers the desired photomask pattern is formed, and then An auxiliary resist pattern is formed, and then exposure is performed using a photomask on which a desired photomask pattern has been formed, thereby forming a desired resist pattern.
(ホ) 作 用
上記した本発明形成方法では、一旦補助レジス
トパターンを形成した後に所望のレジストパター
ンを形成する二重露光法を用いているので、所望
のレジストパターン形成工程でフオトマスクとレ
ジスト面の密着不良を生じることがない。(E) Function The above-described forming method of the present invention uses a double exposure method in which a desired resist pattern is formed after forming an auxiliary resist pattern, so that the photomask and the resist surface are exposed in the process of forming the desired resist pattern. Does not cause poor adhesion.
(ヘ) 実施例
以下、本発明の一実施例について図面を参照し
ながら説明する。(F) Embodiment An embodiment of the present invention will be described below with reference to the drawings.
即ち、本発明では所望のレジストパターンを形
成する前に、一旦このレジストパターンと概略近
似した補助レジストパターンを形成して所望のレ
ジストパターン形成時に除去されるフオトレジス
トの大部分を除去するようにしたものである。従
つて、所望のレジストパターン形成時には感光さ
れるべきフオトレジスト面積が小さくなりN2ガ
スの発生量も補助パターン形成時に比べて大幅に
少なくなるため、密着不良を生じない高精度のパ
ターン形成を行なうことが出来る。 That is, in the present invention, before forming a desired resist pattern, an auxiliary resist pattern roughly similar to this resist pattern is formed to remove most of the photoresist that would be removed when forming the desired resist pattern. It is something. Therefore, when forming a desired resist pattern, the area of the photoresist to be exposed to light becomes smaller and the amount of N 2 gas generated is significantly smaller than when forming an auxiliary pattern, allowing highly accurate pattern formation without poor adhesion. I can do it.
即ち、単位面積、単位露光量当り、フオトレジ
ストの感光反応により発生するN2ガスの量をｎ
とし、全露光面積をＳとすれば、面積Ss（Ｓ＞
Ss）の補助フオトマスクパターンを用いた場合、
露光される部分の面積はＳ−Ssとなり、この補
助レジストパターン形成工程で発生するN2ガス
の量Q1はN2ガスの発生が露光時間と比例すると
考えればｎ（Ｓ−Ss）t1（t1：露光時間）となる。
更に、所望のレジストパターン形成工程において
レジストパターンの面積をSM（Ss＞SM）とすれば
この工程におけるN2ガスの発生量Q2はｎ（Ss−
SM）t2（t2：露光時間）となる。ここで両工程で
の露光時間を等しくすれば（t1＝t2＝ｔ）その差
はQ1−Q2＝ｎ（Ｓ−2Ss＋SM）ｔとなり、通常Ｓ
＞＞SsなのでQ1＞Q2となり、補助レジスタパタ
ーン形成工程で発生するN2ガス量よりも少なく
なる。これを従来のような１回の工程で行なえば
発生するN2ガスの量Q3はｎ（Ｓ−SM）ｔとなり、
Q2とQ3とを比べればQ3−Q2＝ｎ（Ｓ−Ss）ｔと
なつて明らかにQ3＞Q2で、本発明におけるN2ガ
ス発生量よりも多くなつて密着不良を生じ易い。 That is, the amount of N2 gas generated by the photoresist reaction per unit area and unit exposure amount is n.
If the total exposed area is S, then the area Ss (S>
When using the auxiliary photomask pattern of Ss),
The area of the exposed part is S-Ss, and the amount Q1 of N2 gas generated in this auxiliary resist pattern forming process is n(S-Ss) t1 considering that the generation of N2 gas is proportional to the exposure time. ( t1 : exposure time).
Furthermore, if the area of the resist pattern in the desired resist pattern forming process is S M (Ss>S M ), the amount Q 2 of N 2 gas generated in this process is n(Ss -
S M )t 2 (t 2 : exposure time). If the exposure time in both processes is made equal (t 1 = t 2 = t), the difference will be Q 1 - Q 2 = n (S - 2Ss + S M )t, which is normally S
>>Ss, so Q 1 > Q 2 , which is smaller than the amount of N 2 gas generated in the auxiliary register pattern forming process. If this is done in one process like the conventional one, the amount of N 2 gas generated Q 3 will be n(S-S M )t,
Comparing Q 2 and Q 3 , Q 3 - Q 2 = n (S - Ss)t, and it is clear that Q 3 > Q 2 , which is greater than the amount of N 2 gas generated in the present invention, causing poor adhesion. Easy to occur.
次に、本発明における微細パターンの形成方法
について第１図乃至第５図を参照しながら具体的
に説明する。 Next, a method for forming a fine pattern according to the present invention will be specifically explained with reference to FIGS. 1 to 5.
先ず、ウエハ１上に蒸着、スパツタ等によつて
例えばCu膜（膜厚2000Å）等の被エツチング膜
２を形成した後、その上にフオトレジスト３をそ
の膜厚が約1μｍになるように塗布形成する。そ
して、補助フオトマスクパターン４がその裏面側
にCr等で形成された補助フオトマスク５を、第
１図に示す如くフオトレジスト３上に密着させた
後（即ち、その補助フオトマスクパターン４をレ
ジスト面に密着させた後）、その上から水銀ラン
プを用いて10秒の露光をかける。この露光後、フ
オトレジスト３の光の当つた部分は前述したよう
に感光反応を起こして現像液に可溶性になり、光
の当つていない部分（即ち、補助フオトマスク４
にて覆われた部分）は現像液に溶けないため、現
像後は第２図のように補助レジストパターンが形
成される。この補助レジストパターンは所望のレ
ジストパターンの概略であるため高精度である必
要はなくN2ガスの発生により補助フオトマスク
５がレジスト面から浮き上がつて密着不良を生じ
ても支障はない。そして、次に所望のフオトマス
クパターン６がその裏面側にCr等で形成された
フオトマスク７を第３図に示す如くフオトレジス
ト３（即ち、補助レジストパターン）上に密着さ
せた後、上記補助フオトマスクを用いた工程と同
様に露光、現像を行ない、第４図に示す所望のレ
ジストパターンを形成する。尚、この工程におい
ては、露光されて感光反応を起こす面積が補助レ
ジストパターン形成工程に比べて小さくなつてい
るので、N2ガスの発生も少なくなりフオトマス
ク７がレジスト面から離れて密着不良を起こすこ
とがない。更に、発生したN2ガスは先に形成し
た補助レジストパターンのレジスト隙間から逃れ
ることが出来るので、更にマスク面がレジストか
ら離れにくくなる。従つて、所望のレジストパタ
ーンはパターン寸法の偏差や変形がなくフオトマ
スクパターンに忠実に且つパターンの切れの極め
て良好な高精度のパターンが得られる。 First, a film to be etched 2 such as a Cu film (2000 Å thick) is formed on the wafer 1 by vapor deposition, sputtering, etc., and then a photoresist 3 is applied thereon to a thickness of about 1 μm. Form. After the auxiliary photomask pattern 4 is formed of Cr or the like on the back surface thereof, the auxiliary photomask 5 is brought into close contact with the photoresist 3 as shown in FIG. ), then expose it to light for 10 seconds using a mercury lamp. After this exposure, the portion of the photoresist 3 that has been exposed to light undergoes a photosensitive reaction as described above and becomes soluble in the developer, and the portion of the photoresist 3 that has not been exposed to light (i.e., the auxiliary photomask 4
Since the portion covered by (2) is not dissolved in the developer, an auxiliary resist pattern is formed after development as shown in FIG. Since this auxiliary resist pattern is an outline of a desired resist pattern, it does not need to be highly accurate, and there is no problem even if the auxiliary photomask 5 is lifted from the resist surface due to the generation of N 2 gas and poor adhesion occurs. Then, as shown in FIG. 3, a photomask 7 having a desired photomask pattern 6 formed of Cr or the like on the back side thereof is brought into close contact with the photoresist 3 (i.e., auxiliary resist pattern), and then the auxiliary photomask Exposure and development are carried out in the same manner as in the process using , and the desired resist pattern shown in FIG. 4 is formed. In this process, the area that is exposed to light and undergoes a photosensitive reaction is smaller than in the auxiliary resist pattern formation process, so less N2 gas is generated and the photomask 7 separates from the resist surface, causing poor adhesion. Never. Furthermore, the generated N 2 gas can escape through the resist gap of the previously formed auxiliary resist pattern, making it even more difficult for the mask surface to separate from the resist. Therefore, it is possible to obtain a desired resist pattern that is faithful to the photomask pattern without any deviation or deformation in pattern dimensions, and has a highly accurate pattern with excellent pattern cut.
この様にして形成された所望のレジストパター
ンにより被エツチング膜２をドライエツチング等
の既知の技術によりエツチングを行ない、残存し
たレジストを除去すれば第５図のように被エツチ
ング膜２が所望のパターンにエツチングされる。 Using the desired resist pattern thus formed, the film to be etched 2 is etched by a known technique such as dry etching, and the remaining resist is removed so that the film to be etched 2 forms the desired pattern as shown in FIG. Etched by.
尚、上記実施例においてフオトレジストとして
東京応化社のOFPR800を用いたが、本発明はこ
れに限定されるものではなく、感光反応により
N2ガスを放出するすべてのフオトレジストに適
用できるものである。 In the above examples, OFPR800 manufactured by Tokyo Ohkasha Co., Ltd. was used as a photoresist, but the present invention is not limited thereto.
It is applicable to all photoresists that emit N2 gas.
(ト) 発明の効果
上述した如く本発明に依れば、所望のレジスト
パターンを形成する前にこのレジストパターンと
概略近似した補助レジストパターンを形成して、
所望のレジストパターン形成時に感光除去される
フオトレジストの大部分を除去するようにしたの
で、N2ガスの発生により生じていた密着不良を
防止出来、パターンの寸法変化や形状変化の極め
て少ない高精度の微細パターンが特殊な機器を用
いることなく、簡単に、生産性良く得ることが出
来ると謂う優れた効果を奏する。(G) Effects of the Invention As described above, according to the present invention, before forming a desired resist pattern, an auxiliary resist pattern roughly similar to this resist pattern is formed,
Since most of the photoresist that is photoresist removed when forming the desired resist pattern is removed, poor adhesion caused by the generation of N2 gas can be prevented, resulting in high precision with extremely minimal dimensional and shape changes in the pattern. It has an excellent effect in that a fine pattern can be easily obtained with high productivity without using special equipment.
図は本発明における微細パターンの形成方法を
具体的に示し、第１図は補助フオトマスクの密着
状態を示す図、第２図はその補助レジストパター
ンを示す図、第３図は所望のフオトマスクの密着
状態を示す図、第４図は所望のレジストパターン
を示す図、第５図は被エツチング膜のパターンを
示す図である。
１…ウエハ、２…被エツチング膜、３…フオト
レジスト、５…補助フオトマスク。
The figures specifically show the method of forming a fine pattern according to the present invention, FIG. 1 shows the adhesion state of the auxiliary photomask, FIG. 2 shows the auxiliary resist pattern, and FIG. 3 shows the desired adhesion of the photomask. FIG. 4 is a diagram showing the desired resist pattern, and FIG. 5 is a diagram showing the pattern of the film to be etched. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Film to be etched, 3... Photoresist, 5... Auxiliary photomask.
Claims (1)
そのポジ型フオトレジスト膜上に所望のフオトマ
スクパターンが形成されたフオトマスクを密着し
て露光することによりウエハ上に所望のレジスト
パターンを形成する微細パターンの形成方法にお
いて、先ず所望のフオトマスクパターンを概略覆
う補助フオトマスクパターンが形成された補助フ
オトマスクで露光を行なつて一旦補助レジストパ
ターンを形成し、その後所望のフオトマスクパタ
ーンが形成されたフオトマスクで露光を行なつて
所望のレジストパターンを形成することを特徴と
した微細パターンの形成方法。1 Apply positive photoresist on the wafer,
In a fine pattern forming method in which a desired resist pattern is formed on a wafer by closely exposing a photomask with a desired photomask pattern formed on the positive photoresist film, first, a desired photomask pattern is formed on the wafer. Exposure is performed using an auxiliary photomask on which an auxiliary photomask pattern that roughly covers is formed to once form an auxiliary resist pattern, and then exposure is performed using a photomask on which a desired photomask pattern is formed to form a desired resist pattern. A method for forming fine patterns characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084818A JPS61242023A (en) | 1985-04-19 | 1985-04-19 | Formation of fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084818A JPS61242023A (en) | 1985-04-19 | 1985-04-19 | Formation of fine pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61242023A JPS61242023A (en) | 1986-10-28 |
| JPH0525168B2 true JPH0525168B2 (en) | 1993-04-12 |
Family
ID=13841323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60084818A Granted JPS61242023A (en) | 1985-04-19 | 1985-04-19 | Formation of fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61242023A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7168821B1 (en) * | 2021-04-30 | 2022-11-09 | 積水化学工業株式会社 | thermally expandable microcapsules |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4810080B2 (en) * | 2003-09-19 | 2011-11-09 | パナソニック株式会社 | Master information carrier manufacturing method, magnetic recording medium manufacturing method, and magnetic recording / reproducing apparatus manufacturing method |
-
1985
- 1985-04-19 JP JP60084818A patent/JPS61242023A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7168821B1 (en) * | 2021-04-30 | 2022-11-09 | 積水化学工業株式会社 | thermally expandable microcapsules |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61242023A (en) | 1986-10-28 |
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