JPS5543542A - Exposure method and exposure mask used for this - Google Patents

Exposure method and exposure mask used for this

Info

Publication number
JPS5543542A
JPS5543542A JP11653478A JP11653478A JPS5543542A JP S5543542 A JPS5543542 A JP S5543542A JP 11653478 A JP11653478 A JP 11653478A JP 11653478 A JP11653478 A JP 11653478A JP S5543542 A JPS5543542 A JP S5543542A
Authority
JP
Japan
Prior art keywords
patterns
exposure
substrate
mask
coating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11653478A
Other languages
Japanese (ja)
Other versions
JPS6053871B2 (en
Inventor
Shinichiro Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP53116534A priority Critical patent/JPS6053871B2/en
Publication of JPS5543542A publication Critical patent/JPS5543542A/en
Publication of JPS6053871B2 publication Critical patent/JPS6053871B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Projection-Type Copiers In General (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the production of defects of patterns owing to foreign matter deposited on the mask surface by covering the pattern surface with a transparent coating layer of the specified thickness thereby forming the exposure mask by a project alignment system. CONSTITUTION:A transparent coating layer 1b of about 10-100mu is provided on patterns 1c whereby an exposure mask 1 is formed on a substrate 1a for exposure mask provided with the patterns 1c to be transferred to a substrate (wafer) (Fig. a). At the time of exposure by a project aligner, the light having passed through the pattern 1c of the mask 1 is reflected by an optical system 2 and forms a real image 5 on the substrate (wafer) coated with photoresist but there is the transparent coating layer 1b on the patterns 1c and therefore the image of deposited froeign matter 4 cannot be accurately formed on the substrate, whereby the production of defects of the patterns owing to the foreign matter 4 is prevented (Fig. b).
JP53116534A 1978-09-25 1978-09-25 Exposure method Expired JPS6053871B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53116534A JPS6053871B2 (en) 1978-09-25 1978-09-25 Exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53116534A JPS6053871B2 (en) 1978-09-25 1978-09-25 Exposure method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59176655A Division JPS60121449A (en) 1984-08-27 1984-08-27 Mask for exposure

Publications (2)

Publication Number Publication Date
JPS5543542A true JPS5543542A (en) 1980-03-27
JPS6053871B2 JPS6053871B2 (en) 1985-11-27

Family

ID=14689498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53116534A Expired JPS6053871B2 (en) 1978-09-25 1978-09-25 Exposure method

Country Status (1)

Country Link
JP (1) JPS6053871B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5719027U (en) * 1980-07-08 1982-02-01
JPS57112341U (en) * 1980-12-29 1982-07-12
JPS6153646A (en) * 1984-08-24 1986-03-17 Nippon Kogaku Kk <Nikon> Projection optical device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063812A (en) * 1976-08-12 1977-12-20 International Business Machines Corporation Projection printing system with an improved mask configuration

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063812A (en) * 1976-08-12 1977-12-20 International Business Machines Corporation Projection printing system with an improved mask configuration

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5719027U (en) * 1980-07-08 1982-02-01
JPS6027641Y2 (en) * 1980-07-08 1985-08-21 山陽国策パルプ株式会社 Tough cushioning sheet
JPS57112341U (en) * 1980-12-29 1982-07-12
JPS6153646A (en) * 1984-08-24 1986-03-17 Nippon Kogaku Kk <Nikon> Projection optical device

Also Published As

Publication number Publication date
JPS6053871B2 (en) 1985-11-27

Similar Documents

Publication Publication Date Title
DE69515571D1 (en) Process for producing a glass substrate coated with a finely structured Nesa glass membrane
JPS57190912A (en) Production of color filter
JPS5543542A (en) Exposure method and exposure mask used for this
EP0472210A3 (en) Production of color filter
EP0517923A4 (en) Method of forming minute resist pattern
JPS5445102A (en) Undulation pattern forming method
JPS5580323A (en) Pattern forming method for photoresist-film
JPS55128832A (en) Method of making minute pattern
JPS57136646A (en) Positive type photoresist developing method
JPS5574544A (en) Photo mask correcting method
JPS5594491A (en) Forming method for thick minute metal pattern
KR100265055B1 (en) Manufacturing method of pattern
JPS5689741A (en) Dryplate for photomasking
JPS55113046A (en) Pattern forming method
JPS5655950A (en) Photographic etching method
JPS5754322A (en) Inspecting method for photomask
JPS57212445A (en) Production of photomask
JPS56165324A (en) Formation of pattern
JPS60231331A (en) Formation of lift-off pattern
JPS6447085A (en) Formation of shift type diffraction grating pattern
JPS5785056A (en) Preparation of metallic substrate
JPS6413544A (en) Pattern forming method
JPS56158334A (en) Manufacture of hard mask
JPS56105478A (en) Processing method of pattern for aluminum surface mirror
JPS6136748A (en) Exposing mask