JPS5745261A - Forming method for pattern - Google Patents
Forming method for patternInfo
- Publication number
- JPS5745261A JPS5745261A JP12051280A JP12051280A JPS5745261A JP S5745261 A JPS5745261 A JP S5745261A JP 12051280 A JP12051280 A JP 12051280A JP 12051280 A JP12051280 A JP 12051280A JP S5745261 A JPS5745261 A JP S5745261A
- Authority
- JP
- Japan
- Prior art keywords
- irradiation
- amount
- bridge
- slightly
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To minimize a proximity effect of electron beams, and to obtain the minute pattern by exposing a large area section and a bridge section by the slightly small amount of irradiation and exposing both sides of the bridge through thin beams by the slightly large amount of irradiation. CONSTITUTION:The large area section and the bridge section are exposed by the amount of irradiation 42 slightly less than the proper amount of irradiation, and both sides of the bridge are doubly exposed through thin beams by the amount of irradiation 41 slightly more than the proper amount of irradiation. The resist pattern 2 with the bridge section 10 according to the design is formed because the electron beams are reflected by a substrate 3 and are more than the proper amount of irradiation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12051280A JPS5745261A (en) | 1980-08-29 | 1980-08-29 | Forming method for pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12051280A JPS5745261A (en) | 1980-08-29 | 1980-08-29 | Forming method for pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5745261A true JPS5745261A (en) | 1982-03-15 |
Family
ID=14788044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12051280A Pending JPS5745261A (en) | 1980-08-29 | 1980-08-29 | Forming method for pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5745261A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0110042A2 (en) * | 1982-11-03 | 1984-06-13 | International Business Machines Corporation | Electron beam lithograph proximity correction method |
US5210696A (en) * | 1989-02-10 | 1993-05-11 | Fujitsu Limited | Electron beam exposure data processing method, electron beam exposure method and apparatus |
-
1980
- 1980-08-29 JP JP12051280A patent/JPS5745261A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0110042A2 (en) * | 1982-11-03 | 1984-06-13 | International Business Machines Corporation | Electron beam lithograph proximity correction method |
US4520269A (en) * | 1982-11-03 | 1985-05-28 | International Business Machines Corporation | Electron beam lithography proximity correction method |
US5210696A (en) * | 1989-02-10 | 1993-05-11 | Fujitsu Limited | Electron beam exposure data processing method, electron beam exposure method and apparatus |
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