JPS6428821A - Fine pattern formation - Google Patents

Fine pattern formation

Info

Publication number
JPS6428821A
JPS6428821A JP62183973A JP18397387A JPS6428821A JP S6428821 A JPS6428821 A JP S6428821A JP 62183973 A JP62183973 A JP 62183973A JP 18397387 A JP18397387 A JP 18397387A JP S6428821 A JPS6428821 A JP S6428821A
Authority
JP
Japan
Prior art keywords
resist
etching resistant
dry
patterns
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62183973A
Other languages
Japanese (ja)
Other versions
JPH0793255B2 (en
Inventor
Kazuhiko Hashimoto
Kazuhiro Yamashita
Noboru Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62183973A priority Critical patent/JPH0793255B2/en
Priority to KR1019880008883A priority patent/KR910007534B1/en
Publication of JPS6428821A publication Critical patent/JPS6428821A/en
Priority to US07/655,237 priority patent/US5186788A/en
Publication of JPH0793255B2 publication Critical patent/JPH0793255B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form high dry-etching resistant positive-negative reversal patterns by a method wherein a resist, after being irradiated, is exposed to electron beams. CONSTITUTION:A semiconductor substrate 1 is coated with a resist 2. Then, overall surface of the resist 2 is collectively irradiated with H<+> or Si<+> ion. A positive-negative inversed semiconductor circuit pattern is formed by exposing the resist 2 to electron beams for development to form highly dry-etching resistant resist patterns 4p. A low dry-etching resistant electron beam resist is applied as for the resist 2. On the other hand, low acceleration voltage of 10-40KV is applied as for the low acceleration voltage in case of ion irradiation while 5X10<13>-9X10<13>ions/cm<2> is applied as for the ion irradiation dosage. Through these procedures, the high dry-etching resistant positive-negative inversed patterns can be formed.
JP62183973A 1987-07-23 1987-07-23 Fine pattern forming method Expired - Lifetime JPH0793255B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62183973A JPH0793255B2 (en) 1987-07-23 1987-07-23 Fine pattern forming method
KR1019880008883A KR910007534B1 (en) 1987-07-23 1988-07-16 Micro-pattern forming method
US07/655,237 US5186788A (en) 1987-07-23 1991-02-12 Fine pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62183973A JPH0793255B2 (en) 1987-07-23 1987-07-23 Fine pattern forming method

Publications (2)

Publication Number Publication Date
JPS6428821A true JPS6428821A (en) 1989-01-31
JPH0793255B2 JPH0793255B2 (en) 1995-10-09

Family

ID=16145071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62183973A Expired - Lifetime JPH0793255B2 (en) 1987-07-23 1987-07-23 Fine pattern forming method

Country Status (1)

Country Link
JP (1) JPH0793255B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5972194A (en) * 1994-02-12 1999-10-26 Schepers; Hans-Georg Process for producing a base mold for electrolytically producing seamless rotary screen printing stencils
JP2004513504A (en) * 2000-04-18 2004-04-30 オブドゥカト　アクティエボラーグ Substrate related to structure and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114356A (en) * 1974-02-20 1975-09-08
JPS57157523A (en) * 1981-03-25 1982-09-29 Hitachi Ltd Forming method for pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114356A (en) * 1974-02-20 1975-09-08
JPS57157523A (en) * 1981-03-25 1982-09-29 Hitachi Ltd Forming method for pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5972194A (en) * 1994-02-12 1999-10-26 Schepers; Hans-Georg Process for producing a base mold for electrolytically producing seamless rotary screen printing stencils
JP2004513504A (en) * 2000-04-18 2004-04-30 オブドゥカト　アクティエボラーグ Substrate related to structure and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0793255B2 (en) 1995-10-09

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