JPS5619045A - Electron beam sensitive inorganic resist - Google Patents

Electron beam sensitive inorganic resist

Info

Publication number
JPS5619045A
JPS5619045A JP9522079A JP9522079A JPS5619045A JP S5619045 A JPS5619045 A JP S5619045A JP 9522079 A JP9522079 A JP 9522079A JP 9522079 A JP9522079 A JP 9522079A JP S5619045 A JPS5619045 A JP S5619045A
Authority
JP
Japan
Prior art keywords
layer
thin film
electron beam
resist
beam sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9522079A
Other languages
Japanese (ja)
Other versions
JPS6024933B2 (en
Inventor
Tatsuya Ikeuchi
Tomihiro Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP54095220A priority Critical patent/JPS6024933B2/en
Publication of JPS5619045A publication Critical patent/JPS5619045A/en
Publication of JPS6024933B2 publication Critical patent/JPS6024933B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To easily manufacture a photomask having a precise pattern by using a mixture of Si and silicon oxide as an electron beam sensitive resist.
CONSTITUTION: Cr thin film layer (layer to be worked) 2 is laid on transparent glass substrate 1, and a mixture of 1pt.wt. Si and ≤ about 5pts.wt. silicon oxide is vapor-deposited on layer 2 to form about 0.1W1μm thick inorg. resist thin film 3. Film 3 is selectively irradiated with electron beams 4 in about 10-3W10-6C/cm2 quantity of irradiation and then developed with an etching soln. for an Si wafer to remove film 3 of the unirradiated portion and expose Cr layer 2. Using patterned resist thin film 5 as a mask, layer 2 is etched with an etching soln. such as a mixed aqueous soln. of ceric ammonium nitrate and perchloric acid to form patterned Cr thin film layer 6 on substrate 1.
COPYRIGHT: (C)1981,JPO&Japio
JP54095220A 1979-07-26 1979-07-26 Electron sensitive inorganic resist Expired JPS6024933B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54095220A JPS6024933B2 (en) 1979-07-26 1979-07-26 Electron sensitive inorganic resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54095220A JPS6024933B2 (en) 1979-07-26 1979-07-26 Electron sensitive inorganic resist

Publications (2)

Publication Number Publication Date
JPS5619045A true JPS5619045A (en) 1981-02-23
JPS6024933B2 JPS6024933B2 (en) 1985-06-15

Family

ID=14131651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54095220A Expired JPS6024933B2 (en) 1979-07-26 1979-07-26 Electron sensitive inorganic resist

Country Status (1)

Country Link
JP (1) JPS6024933B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000017710A1 (en) * 1998-09-17 2000-03-30 Quantiscript Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
WO2006129565A1 (en) * 2005-05-30 2006-12-07 Pioneer Corporation Resist material, and resist material for electron beam recording
JP2008134653A (en) * 2005-05-30 2008-06-12 Pioneer Electronic Corp Resist material, and resist material for electron beam recording

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03234972A (en) * 1990-02-09 1991-10-18 Aisan Ind Co Ltd Sealing method of cylindrical body

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261938B1 (en) 1997-02-12 2001-07-17 Quantiscript, Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
WO2000017710A1 (en) * 1998-09-17 2000-03-30 Quantiscript Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
WO2006129565A1 (en) * 2005-05-30 2006-12-07 Pioneer Corporation Resist material, and resist material for electron beam recording
JP2008134653A (en) * 2005-05-30 2008-06-12 Pioneer Electronic Corp Resist material, and resist material for electron beam recording
JPWO2006129565A1 (en) * 2005-05-30 2009-01-08 パイオニア株式会社 Resist material and electron beam recording resist material
US7713678B2 (en) 2005-05-30 2010-05-11 Pioneer Corporation Resist material and electron beam recording resist material
JP4696113B2 (en) * 2005-05-30 2011-06-08 パイオニア株式会社 Resist material and electron beam recording resist material
JP4696132B2 (en) * 2005-05-30 2011-06-08 パイオニア株式会社 Resist material and electron beam recording resist material

Also Published As

Publication number Publication date
JPS6024933B2 (en) 1985-06-15

Similar Documents

Publication Publication Date Title
JPS5619045A (en) Electron beam sensitive inorganic resist
JPS57157241A (en) Formation of resist material and its pattern
JPS5492061A (en) Micropattern forming method
JPS5528077A (en) Production of mask
JPS57130431A (en) Manufacture of semiconductor device
EP0318956A3 (en) Positive-working photoresist compositions and use thereof for forming positive-tone relief images
JPS56107241A (en) Dry etching method
JPS5496363A (en) Electrode forming method for semiconductor device
JPS5556629A (en) Pattern forming method
JPS5685751A (en) Photomask
JPS5568634A (en) Manufacture of mask for x-ray exposure
JPS5596952A (en) Production of photomask
JPS5616129A (en) Pattern forming method
JPS5619053A (en) Manufacture of photomask
JPS5568626A (en) Pattern formation
JPS57211143A (en) Formation of micropattern
JPS5642346A (en) Manufacture of semiconductor device
JPS56150825A (en) Manufacture of semiconductor device
JPS5741637A (en) Microstep tablet
JPS5596681A (en) Method of fabricating semiconductor device
JPS5748731A (en) Manufacture of mask
JPS5382268A (en) Production of mask
JPS6428821A (en) Fine pattern formation
JPS6432632A (en) Manufacture of semiconductor device
JPS5655943A (en) Pattern forming method