JPS5528077A - Production of mask - Google Patents

Production of mask

Info

Publication number
JPS5528077A
JPS5528077A JP10197378A JP10197378A JPS5528077A JP S5528077 A JPS5528077 A JP S5528077A JP 10197378 A JP10197378 A JP 10197378A JP 10197378 A JP10197378 A JP 10197378A JP S5528077 A JPS5528077 A JP S5528077A
Authority
JP
Japan
Prior art keywords
resist
radiated part
film
ions
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10197378A
Other languages
Japanese (ja)
Other versions
JPS6159505B2 (en
Inventor
Hidefumi Nakada
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10197378A priority Critical patent/JPS5528077A/en
Publication of JPS5528077A publication Critical patent/JPS5528077A/en
Publication of JPS6159505B2 publication Critical patent/JPS6159505B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To solve problems of pattern reproducibility, etc., in production of masks used in the manufacture of semiconductor devices, by drawing the pattern on a high molecular material by using electron beams, and injecting ions at specified amount of energy to reduce consumption of resist film due to development.
CONSTITUTION: A low reflection Cr layer consisting of Cr film 2 and chromium oxide film 3 is formed on a glass substrate 1, and a resist 4 for electron beams is spread thereon. A desired pattern is drawn by an electron beam 10, and a level difference is produced in electron beam radiated part 5. Then, using such energy that passes only through the resist 4 of the radiated part 5 to reach the film 3, ions 11 such as Sb are injectd over the entire surface, and an ion injected layer 6 is fofmed on the layer 3 of the radiated part 5, while ions are left on the resist 4 in the non- radiated part. After this, the resist 4 is removed, and the layers 3, 2 of the non- radiated part are processed by plasma-etching by mixture gas of CCl4 and air. Thus, sharp patterning is realized, and also fine and delicate patterns can be processed easily.
COPYRIGHT: (C)1980,JPO&Japio
JP10197378A 1978-08-21 1978-08-21 Production of mask Granted JPS5528077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10197378A JPS5528077A (en) 1978-08-21 1978-08-21 Production of mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10197378A JPS5528077A (en) 1978-08-21 1978-08-21 Production of mask

Publications (2)

Publication Number Publication Date
JPS5528077A true JPS5528077A (en) 1980-02-28
JPS6159505B2 JPS6159505B2 (en) 1986-12-16

Family

ID=14314801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10197378A Granted JPS5528077A (en) 1978-08-21 1978-08-21 Production of mask

Country Status (1)

Country Link
JP (1) JPS5528077A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133738A (en) * 1980-03-25 1981-10-20 Mitsubishi Electric Corp Forming method for pattern of photomask

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0191702U (en) * 1987-12-09 1989-06-15
JPH0191703U (en) * 1987-12-09 1989-06-15
JPH0191704U (en) * 1987-12-09 1989-06-15
JPH02195846A (en) * 1989-01-25 1990-08-02 Miyazaki Ishiyama Seika Kk Preservation of dried radish stripe
JPH0314430A (en) * 1989-06-08 1991-01-23 Mitsui Toatsu Chem Inc Device and method for shaping sack filled with fluidified material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133738A (en) * 1980-03-25 1981-10-20 Mitsubishi Electric Corp Forming method for pattern of photomask

Also Published As

Publication number Publication date
JPS6159505B2 (en) 1986-12-16

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