JPS56111226A - Formation of fine pattern - Google Patents

Formation of fine pattern

Info

Publication number
JPS56111226A
JPS56111226A JP1303280A JP1303280A JPS56111226A JP S56111226 A JPS56111226 A JP S56111226A JP 1303280 A JP1303280 A JP 1303280A JP 1303280 A JP1303280 A JP 1303280A JP S56111226 A JPS56111226 A JP S56111226A
Authority
JP
Japan
Prior art keywords
pattern
layer
water
resist
soluble high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1303280A
Other languages
Japanese (ja)
Other versions
JPS6156866B2 (en
Inventor
Kazunari Miyoshi
Osamu Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1303280A priority Critical patent/JPS56111226A/en
Publication of JPS56111226A publication Critical patent/JPS56111226A/en
Publication of JPS6156866B2 publication Critical patent/JPS6156866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Abstract

PURPOSE:To improve pattern-forming precision, by forming a layer of water-soluble high-molecular substance between a substrate and a resist layer and forming a pattern identically with the resist. CONSTITUTION:A layer of water-soluble high-molecular substance, polyvinyl alcohol for instance, and a resist layer 4 are stacked on an SiO2 film 2 on an Si substrate 1. After an application of electron beam irradiation and developing to form a pattern 40, an ooze 41 sticks to the bottom. Then the layer 3 is developed by water to form a pattern 30 with the resist 40 as a mask. The ooze 41 is attached to the side wall of the pattern 30. Then the SiO2 film 2 is etched to form a pattern 20 employing such a dry method as an ion etching. Lastly by removing the pattern 30 by water, the desired pattern is obtained. With the water-soluble high-molecular substance layer formed identically with the pattern on the resist, the ooze at the bottom of the resist falls to the side wall of the layer of water-soluble high-molecular substance, resulting in the formation of ultra-fine patterns.
JP1303280A 1980-02-07 1980-02-07 Formation of fine pattern Granted JPS56111226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1303280A JPS56111226A (en) 1980-02-07 1980-02-07 Formation of fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1303280A JPS56111226A (en) 1980-02-07 1980-02-07 Formation of fine pattern

Publications (2)

Publication Number Publication Date
JPS56111226A true JPS56111226A (en) 1981-09-02
JPS6156866B2 JPS6156866B2 (en) 1986-12-04

Family

ID=11821780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1303280A Granted JPS56111226A (en) 1980-02-07 1980-02-07 Formation of fine pattern

Country Status (1)

Country Link
JP (1) JPS56111226A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07191325A (en) * 1993-12-27 1995-07-28 Nec Corp Formation of liquid crystal oriented film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077404U (en) * 1993-06-29 1995-02-03 武 亀井 Ants pet dishware plate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940874A (en) * 1972-08-25 1974-04-17
JPS52122477A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Processing of thin film patterns
JPS5389673A (en) * 1977-01-19 1978-08-07 Oki Electric Ind Co Ltd Fine pattern forming method of semiconductor device
JPS54146966A (en) * 1978-05-10 1979-11-16 Nec Corp Pattern forming method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940874A (en) * 1972-08-25 1974-04-17
JPS52122477A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Processing of thin film patterns
JPS5389673A (en) * 1977-01-19 1978-08-07 Oki Electric Ind Co Ltd Fine pattern forming method of semiconductor device
JPS54146966A (en) * 1978-05-10 1979-11-16 Nec Corp Pattern forming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07191325A (en) * 1993-12-27 1995-07-28 Nec Corp Formation of liquid crystal oriented film

Also Published As

Publication number Publication date
JPS6156866B2 (en) 1986-12-04

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