JPS57141924A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS57141924A JPS57141924A JP2651181A JP2651181A JPS57141924A JP S57141924 A JPS57141924 A JP S57141924A JP 2651181 A JP2651181 A JP 2651181A JP 2651181 A JP2651181 A JP 2651181A JP S57141924 A JPS57141924 A JP S57141924A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- etching
- az1350j
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 abstract 11
- 238000005530 etching Methods 0.000 abstract 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 2
- 238000009832 plasma treatment Methods 0.000 abstract 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229920002189 poly(glycerol 1-O-monomethacrylate) polymer Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract 1
- 229920002554 vinyl polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To form a fine mask pattern with high accuracy, by fluorine containing plasma treatment two layers of high molecular bond with its upper layer patterned by charged particles and thereby making the surface layer of one of the layers resistive to dry etching. CONSTITUTION:An Az1350J layer 103 for example is coated making the surface flat on an Si substrate 101 on which an oxide film, for example is formed. After forming a pattern by electron beam exposure providing, for example, a styrene resist layer 104, an dry-etching resistive modified layer 105 is formed on the patterned surface by exposing to a plasma of, for example, CF4. Then an oxygen plasma treatment is performed by a paralled flat plate type device, and a pattern consisting of the Az1350J layer 103 is formed utilizing the difference of etching speed, followed by oxide film etching. An organic material layer having vinyl base is formed in the lower layer and a negative resist pattern of PGMA and the like is formed in the upper layer and a positive type pattern is formed in the lower layer by a similar treatment. A fine pattern is thus formed not affected by side etching or proximity effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2651181A JPS57141924A (en) | 1981-02-25 | 1981-02-25 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2651181A JPS57141924A (en) | 1981-02-25 | 1981-02-25 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57141924A true JPS57141924A (en) | 1982-09-02 |
Family
ID=12195498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2651181A Pending JPS57141924A (en) | 1981-02-25 | 1981-02-25 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57141924A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5895826A (en) * | 1981-12-02 | 1983-06-07 | Toppan Printing Co Ltd | Forming method for pattern |
| JPS6132524A (en) * | 1984-07-25 | 1986-02-15 | Matsushita Electric Ind Co Ltd | Pattern forming process |
-
1981
- 1981-02-25 JP JP2651181A patent/JPS57141924A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5895826A (en) * | 1981-12-02 | 1983-06-07 | Toppan Printing Co Ltd | Forming method for pattern |
| JPS6132524A (en) * | 1984-07-25 | 1986-02-15 | Matsushita Electric Ind Co Ltd | Pattern forming process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4715929A (en) | Pattern forming method | |
| JPS6435916A (en) | Formation of fine pattern | |
| EP0095209A3 (en) | Method of forming a resist mask resistant to plasma etching | |
| KR100387456B1 (en) | Method for fabricating semiconductor device | |
| JPS57141924A (en) | Pattern forming method | |
| JPS5255869A (en) | Production of semiconductor device | |
| CA2006175A1 (en) | Method of forming patterned silicone rubber layer | |
| JPS5528077A (en) | Production of mask | |
| EP0318956A3 (en) | Positive-working photoresist compositions and use thereof for forming positive-tone relief images | |
| JPS6432632A (en) | Manufacture of semiconductor device | |
| JPS5568626A (en) | Pattern formation | |
| JPS57167659A (en) | Manufacture of semiconductor device | |
| JPS5496363A (en) | Electrode forming method for semiconductor device | |
| JPS5749233A (en) | Laminar structure resist and forming method for pattern thereof | |
| JPS56115534A (en) | Formation of pattern | |
| JPS5710930A (en) | Dry development method | |
| JPS5646230A (en) | Exposing method | |
| WO1988009527A3 (en) | Silicon-containing negative resist material, and process for its use in patterning substrates | |
| JPS56111226A (en) | Formation of fine pattern | |
| JPS6427228A (en) | Forming method for fine pattern of semiconductor element | |
| JPS6481228A (en) | Pattern forming method | |
| JPS5743425A (en) | Forming method for fine pattern | |
| JPS57211143A (en) | Formation of micropattern | |
| JPS57118641A (en) | Lifting-off method | |
| JPS5619053A (en) | Manufacture of photomask |