JPS57211143A - Formation of micropattern - Google Patents

Formation of micropattern

Info

Publication number
JPS57211143A
JPS57211143A JP9591681A JP9591681A JPS57211143A JP S57211143 A JPS57211143 A JP S57211143A JP 9591681 A JP9591681 A JP 9591681A JP 9591681 A JP9591681 A JP 9591681A JP S57211143 A JPS57211143 A JP S57211143A
Authority
JP
Japan
Prior art keywords
film
pattern
resist
silylating
permitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9591681A
Other languages
Japanese (ja)
Other versions
JPH0243172B2 (en
Inventor
Ken Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP9591681A priority Critical patent/JPS57211143A/en
Publication of JPS57211143A publication Critical patent/JPS57211143A/en
Publication of JPH0243172B2 publication Critical patent/JPH0243172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To facilitate dry patterning of a resist film, by using a photosensitive resist consisting of a mixture of a photosensitive resin and a silylating or acylating agent. CONSTITUTION:A photosensitive resist layer 13 composed of a radiation-sensitive resin, such as polyacrylate, and a silylating or acylating agent is formed on the heat-oxidized film of silicon 12 provided on a semiconductor substrate 11. The resist film 13 is irradiated with electron beams 14 in accordance with a prescribed pattern. The substrate 11 is set in an etching tunnel 16, and exposed to oxygen plasma to remove the parts of the film 13 not exposed to the electron beams 14, thus permitting a resist film pattern 13a to be formed. The unnecessary parts of the film 12 are removed by ion etching using the pattern 13a as a protective film, and further, the pattern 13a is removed, thus permitting the film 12 to be patterned.
JP9591681A 1981-06-23 1981-06-23 Formation of micropattern Granted JPS57211143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9591681A JPS57211143A (en) 1981-06-23 1981-06-23 Formation of micropattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9591681A JPS57211143A (en) 1981-06-23 1981-06-23 Formation of micropattern

Publications (2)

Publication Number Publication Date
JPS57211143A true JPS57211143A (en) 1982-12-24
JPH0243172B2 JPH0243172B2 (en) 1990-09-27

Family

ID=14150597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9591681A Granted JPS57211143A (en) 1981-06-23 1981-06-23 Formation of micropattern

Country Status (1)

Country Link
JP (1) JPS57211143A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248035A (en) * 1985-04-26 1986-11-05 Nippon Zeon Co Ltd Photoresist composition having improved adhesion property
JPS62137830A (en) * 1985-12-12 1987-06-20 Mitsubishi Electric Corp Fine-pattern forming method

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135621A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Photosensitive composition
JPS5427369A (en) * 1977-08-01 1979-03-01 Hitachi Ltd Pattern formation method
JPS5449072A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Developing method for resist film
JPS5460571A (en) * 1977-10-24 1979-05-16 Cho Lsi Gijutsu Kenkyu Kumiai Dry developing and etching method
JPS57157241A (en) * 1981-03-25 1982-09-28 Oki Electric Ind Co Ltd Formation of resist material and its pattern
JPS57202533A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of pattern
JPS57202534A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Negative type resist composition
JPS57202535A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of negative resist pattern
JPS57202532A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of pattern
JPS57202537A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Resist composition for dry development
JPS57205736A (en) * 1981-04-22 1982-12-16 Western Electric Co Solid state device produced by plasm development of resist

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135621A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Photosensitive composition
JPS5427369A (en) * 1977-08-01 1979-03-01 Hitachi Ltd Pattern formation method
JPS5449072A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Developing method for resist film
JPS5460571A (en) * 1977-10-24 1979-05-16 Cho Lsi Gijutsu Kenkyu Kumiai Dry developing and etching method
JPS57157241A (en) * 1981-03-25 1982-09-28 Oki Electric Ind Co Ltd Formation of resist material and its pattern
JPS57205736A (en) * 1981-04-22 1982-12-16 Western Electric Co Solid state device produced by plasm development of resist
JPS57202533A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of pattern
JPS57202534A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Negative type resist composition
JPS57202535A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of negative resist pattern
JPS57202532A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of pattern
JPS57202537A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Resist composition for dry development

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248035A (en) * 1985-04-26 1986-11-05 Nippon Zeon Co Ltd Photoresist composition having improved adhesion property
JPS62137830A (en) * 1985-12-12 1987-06-20 Mitsubishi Electric Corp Fine-pattern forming method

Also Published As

Publication number Publication date
JPH0243172B2 (en) 1990-09-27

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