JPS5539647A - Ion etching - Google Patents

Ion etching

Info

Publication number
JPS5539647A
JPS5539647A JP11278078A JP11278078A JPS5539647A JP S5539647 A JPS5539647 A JP S5539647A JP 11278078 A JP11278078 A JP 11278078A JP 11278078 A JP11278078 A JP 11278078A JP S5539647 A JPS5539647 A JP S5539647A
Authority
JP
Japan
Prior art keywords
resist
etching
mask
thickness
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11278078A
Inventor
Sotaro Edokoro
Hiroshi Gokan
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP11278078A priority Critical patent/JPS5539647A/en
Publication of JPS5539647A publication Critical patent/JPS5539647A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To enable thick substrate material to be etched by using resist-mask with which mask pattern can be formed most easily.
CONSTITUTION: Auxiliary layer 2 with thickness d and resist pattern 3 with height h are formed on etching object material 1. When etching is made of said layer 2 by applying Ar ion beam, said layer attaches again to resist side wall, provided said resist pattern 3 has a sufficient thickness. The tip of said re-attachment layer 2 is etched when such an ion beam incidence angle θv is developed that the etching speed Vs(θ) of a substrate may become maximum. If etching speed Vs(θ)/cos θv is sufficiently smaller than resist material, therefore, the progress of etching can be prevented that involves the inclination of the end portions of said resist pattern 3. The formation of a re-attachment layer with height h' to resist side wall provides substantially the same effect that of the mask of an auxiliary layer with thickness d+h'. If thickness d is small then on the etching made next, the same mask effect is given as obtained with resist thickness h. Lastly, remainder films 2 and 3 are removed. Thereby, thick material can be etched even with resist mask.
COPYRIGHT: (C)1980,JPO&Japio
JP11278078A 1978-09-12 1978-09-12 Ion etching Pending JPS5539647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11278078A JPS5539647A (en) 1978-09-12 1978-09-12 Ion etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11278078A JPS5539647A (en) 1978-09-12 1978-09-12 Ion etching

Publications (1)

Publication Number Publication Date
JPS5539647A true JPS5539647A (en) 1980-03-19

Family

ID=14595302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11278078A Pending JPS5539647A (en) 1978-09-12 1978-09-12 Ion etching

Country Status (1)

Country Link
JP (1) JPS5539647A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170533A (en) * 1981-04-13 1982-10-20 Nec Corp Forming method for mask pattern
US4432132A (en) * 1981-12-07 1984-02-21 Bell Telephone Laboratories, Incorporated Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
JPS60137023A (en) * 1983-12-26 1985-07-20 Fujitsu Ltd Forming method of pattern and device used for executing said method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170533A (en) * 1981-04-13 1982-10-20 Nec Corp Forming method for mask pattern
US4432132A (en) * 1981-12-07 1984-02-21 Bell Telephone Laboratories, Incorporated Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
JPS60137023A (en) * 1983-12-26 1985-07-20 Fujitsu Ltd Forming method of pattern and device used for executing said method

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