JPS6467918A - Formation of fine pattern - Google Patents

Formation of fine pattern

Info

Publication number
JPS6467918A
JPS6467918A JP22502987A JP22502987A JPS6467918A JP S6467918 A JPS6467918 A JP S6467918A JP 22502987 A JP22502987 A JP 22502987A JP 22502987 A JP22502987 A JP 22502987A JP S6467918 A JPS6467918 A JP S6467918A
Authority
JP
Japan
Prior art keywords
film
pattern
films
etching
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22502987A
Other languages
Japanese (ja)
Other versions
JPH07111964B2 (en
Inventor
Shuichi Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62225029A priority Critical patent/JPH07111964B2/en
Publication of JPS6467918A publication Critical patent/JPS6467918A/en
Publication of JPH07111964B2 publication Critical patent/JPH07111964B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To form a fine pattern with high pattern-accuracy without destroying pattern side-wall protecting films of an etched film when etching is performed, by forming an intermediate film with a material which does not contain oxygen atoms in a pattern formation progress where three-layer films: organic, intermediate, and resist films are used on the surface of an etched film. CONSTITUTION:An aluminum alloy film 6 that is an etched film and an organic film 7 are formed on a substrate 1. The intermediate film 8 of an amorphous silicon film is formed on the above films to form a resist film 9. Then, a resist film 9a is formed by exposing and developing the resist film 9 to form an intermediate film pattern 8a as an etching mask. And an organic pattern 7a is formed by performing anisotropic etching for the organic film 7 and further, a fine pattern 6a is formed by etching an Al alloy film 6 as the etching mask. Although side-wall protecting films 10 are formed in the progress of etching at side-walls of the fine pattern 6a, the above films 10 are not destroyed, because the pattern 8a of the amorphous silicon film which is etched simultaneously with the formation of the films 10 does not contain oxygen atoms.
JP62225029A 1987-09-08 1987-09-08 Fine pattern formation method Expired - Lifetime JPH07111964B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225029A JPH07111964B2 (en) 1987-09-08 1987-09-08 Fine pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225029A JPH07111964B2 (en) 1987-09-08 1987-09-08 Fine pattern formation method

Publications (2)

Publication Number Publication Date
JPS6467918A true JPS6467918A (en) 1989-03-14
JPH07111964B2 JPH07111964B2 (en) 1995-11-29

Family

ID=16822945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225029A Expired - Lifetime JPH07111964B2 (en) 1987-09-08 1987-09-08 Fine pattern formation method

Country Status (1)

Country Link
JP (1) JPH07111964B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06283475A (en) * 1992-08-19 1994-10-07 Juergen Dr Gspann Method for forming fine pattern on surface of substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63254745A (en) * 1987-04-13 1988-10-21 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63254745A (en) * 1987-04-13 1988-10-21 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06283475A (en) * 1992-08-19 1994-10-07 Juergen Dr Gspann Method for forming fine pattern on surface of substrate

Also Published As

Publication number Publication date
JPH07111964B2 (en) 1995-11-29

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