JPS6467918A - Formation of fine pattern - Google Patents
Formation of fine patternInfo
- Publication number
- JPS6467918A JPS6467918A JP22502987A JP22502987A JPS6467918A JP S6467918 A JPS6467918 A JP S6467918A JP 22502987 A JP22502987 A JP 22502987A JP 22502987 A JP22502987 A JP 22502987A JP S6467918 A JPS6467918 A JP S6467918A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- films
- etching
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To form a fine pattern with high pattern-accuracy without destroying pattern side-wall protecting films of an etched film when etching is performed, by forming an intermediate film with a material which does not contain oxygen atoms in a pattern formation progress where three-layer films: organic, intermediate, and resist films are used on the surface of an etched film. CONSTITUTION:An aluminum alloy film 6 that is an etched film and an organic film 7 are formed on a substrate 1. The intermediate film 8 of an amorphous silicon film is formed on the above films to form a resist film 9. Then, a resist film 9a is formed by exposing and developing the resist film 9 to form an intermediate film pattern 8a as an etching mask. And an organic pattern 7a is formed by performing anisotropic etching for the organic film 7 and further, a fine pattern 6a is formed by etching an Al alloy film 6 as the etching mask. Although side-wall protecting films 10 are formed in the progress of etching at side-walls of the fine pattern 6a, the above films 10 are not destroyed, because the pattern 8a of the amorphous silicon film which is etched simultaneously with the formation of the films 10 does not contain oxygen atoms.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62225029A JPH07111964B2 (en) | 1987-09-08 | 1987-09-08 | Fine pattern formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62225029A JPH07111964B2 (en) | 1987-09-08 | 1987-09-08 | Fine pattern formation method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6467918A true JPS6467918A (en) | 1989-03-14 |
JPH07111964B2 JPH07111964B2 (en) | 1995-11-29 |
Family
ID=16822945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62225029A Expired - Lifetime JPH07111964B2 (en) | 1987-09-08 | 1987-09-08 | Fine pattern formation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07111964B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06283475A (en) * | 1992-08-19 | 1994-10-07 | Juergen Dr Gspann | Method for forming fine pattern on surface of substrate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63254745A (en) * | 1987-04-13 | 1988-10-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-09-08 JP JP62225029A patent/JPH07111964B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63254745A (en) * | 1987-04-13 | 1988-10-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06283475A (en) * | 1992-08-19 | 1994-10-07 | Juergen Dr Gspann | Method for forming fine pattern on surface of substrate |
Also Published As
Publication number | Publication date |
---|---|
JPH07111964B2 (en) | 1995-11-29 |
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