JPS5539646A - Ion taper etching - Google Patents

Ion taper etching

Info

Publication number
JPS5539646A
JPS5539646A JP11277878A JP11277878A JPS5539646A JP S5539646 A JPS5539646 A JP S5539646A JP 11277878 A JP11277878 A JP 11277878A JP 11277878 A JP11277878 A JP 11277878A JP S5539646 A JPS5539646 A JP S5539646A
Authority
JP
Japan
Prior art keywords
etching
auxiliary layer
object film
normal
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11277878A
Other languages
Japanese (ja)
Inventor
Hiroshi Gokan
Sotaro Edokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11277878A priority Critical patent/JPS5539646A/en
Publication of JPS5539646A publication Critical patent/JPS5539646A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To ensure highly reproducible taper etching by providing a process consisting of placing auxiliary layer and mask pattern on etching object film, placing said etching object film on a rotary table, removing said auxiliary layer by applying ion beam from angle θ with the normal of said etching object film, and applying ion beam in the same direction as said normal.
CONSTITUTION: Auxiliary layer 3 with thickness d' and photo-resist mask 4 with height h and a rectangular sectional form are made on etching object film with thickness d. When only said auxiliary layer 3 is etched by applying ion beam from angle θ with the normal of said etching object film 2 placed on a rotary table, such a form is given thereto that the portions thereof at the edges of said mask 6 rise and the other are inclined gently. Next, when the etching of said etching object film 2 is made by radiating ion beam in the same direcion as the normal of thereof, the tapering portion of an auxiliary layer 5 is etched so that etching may expand rearward so that a film 7 with taper angle α is obtained. Lastly, remainder films 9 and 8 are removed. Thereby, highly reproducible taper etching is possible.
COPYRIGHT: (C)1980,JPO&Japio
JP11277878A 1978-09-12 1978-09-12 Ion taper etching Pending JPS5539646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11277878A JPS5539646A (en) 1978-09-12 1978-09-12 Ion taper etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11277878A JPS5539646A (en) 1978-09-12 1978-09-12 Ion taper etching

Publications (1)

Publication Number Publication Date
JPS5539646A true JPS5539646A (en) 1980-03-19

Family

ID=14595255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11277878A Pending JPS5539646A (en) 1978-09-12 1978-09-12 Ion taper etching

Country Status (1)

Country Link
JP (1) JPS5539646A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223109A (en) * 1990-09-27 1993-06-29 Hitachi, Ltd Ion beam processing method and apparatus
JPH06112213A (en) * 1992-08-31 1994-04-22 Internatl Business Mach Corp <Ibm> Method for etching treatment
US5316640A (en) * 1991-06-19 1994-05-31 Matsushita Electric Industrial Co., Ltd. Fabricating method of micro lens
US5350499A (en) * 1990-09-17 1994-09-27 Matsushita Electric Industrial Co., Ltd. Method of producing microscopic structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4974483A (en) * 1972-10-07 1974-07-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4974483A (en) * 1972-10-07 1974-07-18

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350499A (en) * 1990-09-17 1994-09-27 Matsushita Electric Industrial Co., Ltd. Method of producing microscopic structure
US5223109A (en) * 1990-09-27 1993-06-29 Hitachi, Ltd Ion beam processing method and apparatus
US5316640A (en) * 1991-06-19 1994-05-31 Matsushita Electric Industrial Co., Ltd. Fabricating method of micro lens
JPH06112213A (en) * 1992-08-31 1994-04-22 Internatl Business Mach Corp <Ibm> Method for etching treatment

Similar Documents

Publication Publication Date Title
JPS5548935A (en) Forming of electrode pattern
JPS5539646A (en) Ion taper etching
JPS52143776A (en) Electron beam exposure apparatus
JPS52119172A (en) Forming method of fine pattern
JPS5494881A (en) Exposure method
JPS5512784A (en) Location mark for electron beam exposure
JPS5492061A (en) Micropattern forming method
JPS57198632A (en) Fine pattern formation
JPS5539647A (en) Ion etching
JPS5539645A (en) Dry taper etching
JPS55140229A (en) Method for formation of fine pattern
JPS53105982A (en) Micropattern formation method
JPS5527637A (en) Photo-resist-pattern forming method
JPS5427367A (en) Manufacture of microwave circuit pattern
JPS5533035A (en) Forming of resist pattern shaped like inverted truncated pyramid
JPS5673435A (en) Manufacture of semiconductor device
JPS5651582A (en) Gas etching method
JPS5293273A (en) Fine pattern forming method
JPS52127173A (en) Pattern formation method
JPS57108855A (en) Preparation of photomask
JPS5255381A (en) Photo exposure method
JPS56115534A (en) Formation of pattern
JPS5572038A (en) Preparing semiconductor device
JPS5557229A (en) Method for forming patterned conductor layer
JPS558014A (en) Micro pattern forming method