JPS5572038A - Preparing semiconductor device - Google Patents

Preparing semiconductor device

Info

Publication number
JPS5572038A
JPS5572038A JP14623678A JP14623678A JPS5572038A JP S5572038 A JPS5572038 A JP S5572038A JP 14623678 A JP14623678 A JP 14623678A JP 14623678 A JP14623678 A JP 14623678A JP S5572038 A JPS5572038 A JP S5572038A
Authority
JP
Japan
Prior art keywords
pattern
eaves
etching
tapered
positive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14623678A
Other languages
Japanese (ja)
Inventor
Chuichi Takada
Hitoshi Hoshino
Ryoji Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14623678A priority Critical patent/JPS5572038A/en
Publication of JPS5572038A publication Critical patent/JPS5572038A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a break-resistant tapered type etched pattern by providing a eaves-having positive type resist pattern, with the eaves being removed after an anisotropic plasma etching.
CONSTITUTION: A eaves-having resist pattern 2 is formed on the surface of Al 1 by use of double application of high and low sensitivity positive type photoresists together with the following exposure and development procedures. Then, an ion etching using BCl3 produces a pattern precisely defined or shadowed by the dimensions of the eaves, with the etching proceeding at right angle to the surface of Al 1. At the midway of the ion etching, a gas for etching the photoresist is introduced. As a result, an Al wiring pattern having tapered side face is obtained. The so formed tapered pattern is very fine and yet very resistant against wiring breakage.
COPYRIGHT: (C)1980,JPO&Japio
JP14623678A 1978-11-27 1978-11-27 Preparing semiconductor device Pending JPS5572038A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14623678A JPS5572038A (en) 1978-11-27 1978-11-27 Preparing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14623678A JPS5572038A (en) 1978-11-27 1978-11-27 Preparing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5572038A true JPS5572038A (en) 1980-05-30

Family

ID=15403175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14623678A Pending JPS5572038A (en) 1978-11-27 1978-11-27 Preparing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5572038A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196783A (en) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol Forming method of fine pattern for josephson element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081477A (en) * 1973-11-19 1975-07-02

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081477A (en) * 1973-11-19 1975-07-02

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196783A (en) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol Forming method of fine pattern for josephson element

Similar Documents

Publication Publication Date Title
JPS5593225A (en) Forming method of minute pattern
JPS5548935A (en) Forming of electrode pattern
JPS5572038A (en) Preparing semiconductor device
JPS5243370A (en) Method of forming depression in semiconductor substrate
JPS5496363A (en) Electrode forming method for semiconductor device
JPS5339058A (en) Production of semiconductor device
JPS5272175A (en) Mask patterning of resist meterial
JPS55128830A (en) Method of working photoresist film
JPS56126460A (en) Nozzle plate for liquid injection
JPS53105982A (en) Micropattern formation method
JPS563679A (en) Formation of metallic pattern
JPS5461876A (en) Etching method of insulation film of semiconductor device
JPS5539647A (en) Ion etching
JPS51148366A (en) Pattern formation method
JPS5635774A (en) Dry etching method
JPS5382268A (en) Production of mask
JPS5246775A (en) Method of forming photo mask
JPS5432068A (en) Manufacture of semiconductor device
JPS558014A (en) Micro pattern forming method
JPS553638A (en) Dry etcing
JPS5258476A (en) Method and device for etching
JPS5440080A (en) Forming method of photo resist film
JPS6449230A (en) Manufacture of semiconductor device
JPS53112673A (en) Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution
JPS5459082A (en) Double-sided pattern forming method for semiconductor wafer