JPS553638A - Dry etcing - Google Patents
Dry etcingInfo
- Publication number
- JPS553638A JPS553638A JP7519978A JP7519978A JPS553638A JP S553638 A JPS553638 A JP S553638A JP 7519978 A JP7519978 A JP 7519978A JP 7519978 A JP7519978 A JP 7519978A JP S553638 A JPS553638 A JP S553638A
- Authority
- JP
- Japan
- Prior art keywords
- processed
- hydrogen fluoride
- pressure
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To etch a portion-to-be processed selectively, precisely, and highly reproducibly, by exposing a material-to-be-processed to reactive gas containing hydrogen fluoride of specific pressure at normal or low temperatures, and by selective etching thereof.
CONSTITUTION: A photoresist patter 16 is made on a material-to-be-processed wherein an oxidized films 12 and 13, an electrode 14, an oxidized film 15, and the like are formed on a substrate 11. Then it is exposed to reactive gas containing hydrogen fluoride at normal or low temperature, thereby the portions of the oxidezed film 15 beneath the resit patter 16 are selectively etched and removed. In this process the pressure of the hydrogen fluoride gas is maintained in the range from 1 to 20 torr. Negative-type photoresit is preferable for a mask material 6. In this method, there is no deformation of the mask material, the etching selection ratio of the oxidized film 15 to be etched and the substrate 11 which constitute the material- to-be-processed can be made almost infinitively large, and the etching speed can be controlled by varying the pressure of the hydrogen fluoride gas.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7519978A JPS553638A (en) | 1978-06-21 | 1978-06-21 | Dry etcing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7519978A JPS553638A (en) | 1978-06-21 | 1978-06-21 | Dry etcing |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS553638A true JPS553638A (en) | 1980-01-11 |
Family
ID=13569281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7519978A Pending JPS553638A (en) | 1978-06-21 | 1978-06-21 | Dry etcing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS553638A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5173152A (en) * | 1989-10-02 | 1992-12-22 | Dainippon Screen Mfg. Co., Ltd. | Method for selectively removing an insulating film |
KR100446447B1 (en) * | 1996-12-24 | 2004-11-06 | 주식회사 하이닉스반도체 | Semiconductor fabrication method for etching complex interlayer dielectric including silicon nitride layer |
-
1978
- 1978-06-21 JP JP7519978A patent/JPS553638A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5173152A (en) * | 1989-10-02 | 1992-12-22 | Dainippon Screen Mfg. Co., Ltd. | Method for selectively removing an insulating film |
KR100446447B1 (en) * | 1996-12-24 | 2004-11-06 | 주식회사 하이닉스반도체 | Semiconductor fabrication method for etching complex interlayer dielectric including silicon nitride layer |
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