JPS553638A - Dry etcing - Google Patents

Dry etcing

Info

Publication number
JPS553638A
JPS553638A JP7519978A JP7519978A JPS553638A JP S553638 A JPS553638 A JP S553638A JP 7519978 A JP7519978 A JP 7519978A JP 7519978 A JP7519978 A JP 7519978A JP S553638 A JPS553638 A JP S553638A
Authority
JP
Japan
Prior art keywords
processed
hydrogen fluoride
pressure
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7519978A
Other languages
Japanese (ja)
Inventor
Hiroshi Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7519978A priority Critical patent/JPS553638A/en
Publication of JPS553638A publication Critical patent/JPS553638A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To etch a portion-to-be processed selectively, precisely, and highly reproducibly, by exposing a material-to-be-processed to reactive gas containing hydrogen fluoride of specific pressure at normal or low temperatures, and by selective etching thereof.
CONSTITUTION: A photoresist patter 16 is made on a material-to-be-processed wherein an oxidized films 12 and 13, an electrode 14, an oxidized film 15, and the like are formed on a substrate 11. Then it is exposed to reactive gas containing hydrogen fluoride at normal or low temperature, thereby the portions of the oxidezed film 15 beneath the resit patter 16 are selectively etched and removed. In this process the pressure of the hydrogen fluoride gas is maintained in the range from 1 to 20 torr. Negative-type photoresit is preferable for a mask material 6. In this method, there is no deformation of the mask material, the etching selection ratio of the oxidized film 15 to be etched and the substrate 11 which constitute the material- to-be-processed can be made almost infinitively large, and the etching speed can be controlled by varying the pressure of the hydrogen fluoride gas.
COPYRIGHT: (C)1980,JPO&Japio
JP7519978A 1978-06-21 1978-06-21 Dry etcing Pending JPS553638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7519978A JPS553638A (en) 1978-06-21 1978-06-21 Dry etcing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7519978A JPS553638A (en) 1978-06-21 1978-06-21 Dry etcing

Publications (1)

Publication Number Publication Date
JPS553638A true JPS553638A (en) 1980-01-11

Family

ID=13569281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7519978A Pending JPS553638A (en) 1978-06-21 1978-06-21 Dry etcing

Country Status (1)

Country Link
JP (1) JPS553638A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173152A (en) * 1989-10-02 1992-12-22 Dainippon Screen Mfg. Co., Ltd. Method for selectively removing an insulating film
KR100446447B1 (en) * 1996-12-24 2004-11-06 주식회사 하이닉스반도체 Semiconductor fabrication method for etching complex interlayer dielectric including silicon nitride layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173152A (en) * 1989-10-02 1992-12-22 Dainippon Screen Mfg. Co., Ltd. Method for selectively removing an insulating film
KR100446447B1 (en) * 1996-12-24 2004-11-06 주식회사 하이닉스반도체 Semiconductor fabrication method for etching complex interlayer dielectric including silicon nitride layer

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