JPS5572052A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5572052A
JPS5572052A JP14623778A JP14623778A JPS5572052A JP S5572052 A JPS5572052 A JP S5572052A JP 14623778 A JP14623778 A JP 14623778A JP 14623778 A JP14623778 A JP 14623778A JP S5572052 A JPS5572052 A JP S5572052A
Authority
JP
Japan
Prior art keywords
film
groove
sio
resist pattern
separating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14623778A
Other languages
Japanese (ja)
Other versions
JPS6262464B2 (en
Inventor
Akira Tabata
Yunosuke Kawabe
Chuichi Takada
Ryoji Abe
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14623778A priority Critical patent/JPS5572052A/en
Publication of JPS5572052A publication Critical patent/JPS5572052A/en
Publication of JPS6262464B2 publication Critical patent/JPS6262464B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To provide a semiconductor substrate with a break-free separating layer of insulation material, by forming circumferential edge of a resist pattern into a conversely tapered shape and sputter-etching reactively.
CONSTITUTION: When a photo-resist having been exposed to light is immersed in solution of chlorobenzene for development, circumferential edge of a resist pattern 6 is provided with a conversely tapered section. And, when an Si3N4 film 4, an SiO2 film 3, an epitaxial layer 2 and an Si substrate 1 are reactive-sputter-etched by using CCl4 gas, etc., an etched groove 7 of tapered shape is obtained with accuracy without depending on crystallized surface. And then, the groove 7's inside surface, with exception of the resist pattern 6, is covered with the SiO2 film 3' and the groove's inside is filled by a poly-Si film 8 by soldering. The poly-Si on the film 4 outside the groove is removed by grinding, the SiO2 film 3" is again formed, and when the Si3N4 is eliminated, a separating layer is completed. In this mechanism, an insulating separating layer of a flat surface is obtained on the front surface of a semiconductor substrate of a given crystallized surface so that break of line can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP14623778A 1978-11-27 1978-11-27 Preparation of semiconductor device Granted JPS5572052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14623778A JPS5572052A (en) 1978-11-27 1978-11-27 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14623778A JPS5572052A (en) 1978-11-27 1978-11-27 Preparation of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5572052A true JPS5572052A (en) 1980-05-30
JPS6262464B2 JPS6262464B2 (en) 1987-12-26

Family

ID=15403195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14623778A Granted JPS5572052A (en) 1978-11-27 1978-11-27 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5572052A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896751A (en) * 1981-12-03 1983-06-08 Seiko Epson Corp Semiconductor device
JPS58101066U (en) * 1981-12-29 1983-07-09 日産ディーゼル工業株式会社 Thermostat device for engine cooling water passage
US4404735A (en) * 1980-05-14 1983-09-20 Fujitsu Limited Method for manufacturing a field isolation structure for a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5158071A (en) * 1974-11-18 1976-05-21 Nichiden Varian Kk SUPATSUTAETSUCHINGUHO
JPS5383585A (en) * 1976-12-27 1978-07-24 Raytheon Co Semiconductor structure and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5158071A (en) * 1974-11-18 1976-05-21 Nichiden Varian Kk SUPATSUTAETSUCHINGUHO
JPS5383585A (en) * 1976-12-27 1978-07-24 Raytheon Co Semiconductor structure and method of producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404735A (en) * 1980-05-14 1983-09-20 Fujitsu Limited Method for manufacturing a field isolation structure for a semiconductor device
JPS5896751A (en) * 1981-12-03 1983-06-08 Seiko Epson Corp Semiconductor device
JPS58101066U (en) * 1981-12-29 1983-07-09 日産ディーゼル工業株式会社 Thermostat device for engine cooling water passage

Also Published As

Publication number Publication date
JPS6262464B2 (en) 1987-12-26

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