JPS559448A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS559448A JPS559448A JP8240778A JP8240778A JPS559448A JP S559448 A JPS559448 A JP S559448A JP 8240778 A JP8240778 A JP 8240778A JP 8240778 A JP8240778 A JP 8240778A JP S559448 A JPS559448 A JP S559448A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- etched
- diffusion layer
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To micro-work in designed dimensions by mixing selectively impurities which accelerate or decelerate etching speeds in poly-Si.
CONSTITUTION: A poly-Si layer 12 is grown on the SiO2 film 11 of a Si substrate 10 and is B-diffused to make the layer resistance about 100 Ω/mm2. Next, a P- diffusion layer 12' is made using a Si3N4 mask 13 to make the layer resistance about 10 Ω/mm2. If the substrate is etched with glacial acetic acidic etching solution, the P-diffusion layer 12' is etched fast and the B-diffusion layer 12 is etched slowly, a high accuracy poly-Si pattern 12" is obtained and desired structure is obtained when the mask 13 is removed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8240778A JPS559448A (en) | 1978-07-05 | 1978-07-05 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8240778A JPS559448A (en) | 1978-07-05 | 1978-07-05 | Method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS559448A true JPS559448A (en) | 1980-01-23 |
Family
ID=13773731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8240778A Pending JPS559448A (en) | 1978-07-05 | 1978-07-05 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS559448A (en) |
-
1978
- 1978-07-05 JP JP8240778A patent/JPS559448A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53135263A (en) | Production of semiconductor device | |
JPS559448A (en) | Method of manufacturing semiconductor device | |
JPS5591130A (en) | Production of semiconductor device | |
JPS5585674A (en) | Detecting method for etching end point | |
JPS5382275A (en) | Production of semiconductor device | |
JPS54107277A (en) | Production of semiconductor device | |
JPS5568655A (en) | Manufacturing method of wiring | |
JPS54109783A (en) | Manufacture of semiconductor device | |
JPS5571055A (en) | Semiconductor device and its manufacturing method | |
JPS5562750A (en) | Semiconductor integrated circuit device | |
JPS52130575A (en) | Semiconductor device and its preparation | |
JPS5529104A (en) | Manufacturing semiconductor device | |
JPS52129276A (en) | Production of semiconductor device | |
JPS5578543A (en) | Semiconductor with insulating-film separated construction | |
JPS5643744A (en) | Manufacture of semiconductor device | |
JPS5478668A (en) | Manufacture of semiconductor device | |
JPS5534447A (en) | Preparation of semicinductor device | |
JPS5353280A (en) | Manufacture for semiconductor device | |
JPS5352388A (en) | Semiconductor device | |
JPS52135675A (en) | Anisotropic ethcing of semiconductor single crystal | |
JPS5483771A (en) | Manufacture of semiconductor device | |
JPS5577154A (en) | Preparation of semiconductor device | |
JPS5518096A (en) | Manufacture of semiconductor device | |
JPS5377185A (en) | Electrode formation method of semiconductor device | |
JPS53133376A (en) | Manufacture of semiconductor device |