JPS559448A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS559448A
JPS559448A JP8240778A JP8240778A JPS559448A JP S559448 A JPS559448 A JP S559448A JP 8240778 A JP8240778 A JP 8240778A JP 8240778 A JP8240778 A JP 8240778A JP S559448 A JPS559448 A JP S559448A
Authority
JP
Japan
Prior art keywords
layer
poly
etched
diffusion layer
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8240778A
Other languages
Japanese (ja)
Inventor
Yukinobu Murao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8240778A priority Critical patent/JPS559448A/en
Publication of JPS559448A publication Critical patent/JPS559448A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To micro-work in designed dimensions by mixing selectively impurities which accelerate or decelerate etching speeds in poly-Si.
CONSTITUTION: A poly-Si layer 12 is grown on the SiO2 film 11 of a Si substrate 10 and is B-diffused to make the layer resistance about 100 Ω/mm2. Next, a P- diffusion layer 12' is made using a Si3N4 mask 13 to make the layer resistance about 10 Ω/mm2. If the substrate is etched with glacial acetic acidic etching solution, the P-diffusion layer 12' is etched fast and the B-diffusion layer 12 is etched slowly, a high accuracy poly-Si pattern 12" is obtained and desired structure is obtained when the mask 13 is removed.
COPYRIGHT: (C)1980,JPO&Japio
JP8240778A 1978-07-05 1978-07-05 Method of manufacturing semiconductor device Pending JPS559448A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8240778A JPS559448A (en) 1978-07-05 1978-07-05 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8240778A JPS559448A (en) 1978-07-05 1978-07-05 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS559448A true JPS559448A (en) 1980-01-23

Family

ID=13773731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8240778A Pending JPS559448A (en) 1978-07-05 1978-07-05 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS559448A (en)

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