JPS5478668A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5478668A
JPS5478668A JP14595977A JP14595977A JPS5478668A JP S5478668 A JPS5478668 A JP S5478668A JP 14595977 A JP14595977 A JP 14595977A JP 14595977 A JP14595977 A JP 14595977A JP S5478668 A JPS5478668 A JP S5478668A
Authority
JP
Japan
Prior art keywords
mask
layer
etching
oxide film
removal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14595977A
Other languages
Japanese (ja)
Other versions
JPS566141B2 (en
Inventor
Hideo Yoshino
Toshio Kobayashi
Eisuke Arai
Hideo Akitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14595977A priority Critical patent/JPS5478668A/en
Publication of JPS5478668A publication Critical patent/JPS5478668A/en
Publication of JPS566141B2 publication Critical patent/JPS566141B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To prevent the contanimation of the mask component metal by etching the semiconductor layer via the metal mask formed via the oxide layer and then etching the substrate after removal of the mask.
CONSTITUTION: SiO22 and poly Si3 are laminated on Si substrate 1, and heat oxide film 11 is formed. Then Al film 5 and 6 are deposited via resist mask 4, and Al mask 7 is formed after lifting off the mask. Layer 12 and 8 are formed from layer 11 and 2 through the plasma etching, and layer 13 is formed with removal of mask 7 and etching of the surface of layer 12. In this method, semiconductor layer 3 is etched via the Al mask which is formed via oxide film 11, and the diffusion coefficient of Al is small to the oxide film (layer 13) with the surface etched away. Thus,no contamination is caused, obtaining the expected characteristics.
COPYRIGHT: (C)1979,JPO&Japio
JP14595977A 1977-12-05 1977-12-05 Manufacture of semiconductor device Granted JPS5478668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14595977A JPS5478668A (en) 1977-12-05 1977-12-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14595977A JPS5478668A (en) 1977-12-05 1977-12-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5478668A true JPS5478668A (en) 1979-06-22
JPS566141B2 JPS566141B2 (en) 1981-02-09

Family

ID=15396974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14595977A Granted JPS5478668A (en) 1977-12-05 1977-12-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5478668A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107836A (en) * 1983-10-22 1985-06-13 インターナシヨナル　スタンダード　エレクトリツク　コーポレイシヨン Method of forming pattern
US6383944B1 (en) * 1998-10-16 2002-05-07 Shin-Etsu Chemical Co., Ltd. Micropatterning method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107836A (en) * 1983-10-22 1985-06-13 インターナシヨナル　スタンダード　エレクトリツク　コーポレイシヨン Method of forming pattern
US6383944B1 (en) * 1998-10-16 2002-05-07 Shin-Etsu Chemical Co., Ltd. Micropatterning method

Also Published As

Publication number Publication date
JPS566141B2 (en) 1981-02-09

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