JPS643663A - Forming method for fine pattern - Google Patents

Forming method for fine pattern

Info

Publication number
JPS643663A
JPS643663A JP15792787A JP15792787A JPS643663A JP S643663 A JPS643663 A JP S643663A JP 15792787 A JP15792787 A JP 15792787A JP 15792787 A JP15792787 A JP 15792787A JP S643663 A JPS643663 A JP S643663A
Authority
JP
Japan
Prior art keywords
pattern
resist pattern
polycrystal silicon
resist
sio2 film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15792787A
Other languages
Japanese (ja)
Other versions
JPH052981B2 (en
Inventor
Toru Watanabe
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15792787A priority Critical patent/JPS643663A/en
Publication of JPS643663A publication Critical patent/JPS643663A/en
Publication of JPH052981B2 publication Critical patent/JPH052981B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

PURPOSE:To form a fine pattern by masking and etching a resist pattern, and forming an SiO2 film on the side wall of a layer to be etched which is formed smaller than the width of the resist pattern. CONSTITUTION:A polycrystal silicon 12 is piled up on an Si substrate 11, and a resist is formed thereon, following which the resist pattern 13 is formed. With this resist pattern 13 as a mask, polycrystal silicon is etched. In such a case, it is overetched up to the polycrystal silicon under the resist pattern 13 to form a polycrystal silicone pattern 12a. According to an LPD method, the SiO2 film 14 is uniformly piled up on the resist pattern 13, the Si substrate 11 and a part in which the polycrystal silicon is undercut. With the resist pattern 13 as a mask, the SiO2 film 14 is removed to form an SiO2 film pattern 14a on the side wall of the polycrystal silicon pattern 12a. Afterwards the resist pattern 13 and the polycrystal silicon pattern 12a are removed. Thus the fine pattern can be formed.
JP15792787A 1987-06-26 1987-06-26 Forming method for fine pattern Granted JPS643663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15792787A JPS643663A (en) 1987-06-26 1987-06-26 Forming method for fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15792787A JPS643663A (en) 1987-06-26 1987-06-26 Forming method for fine pattern

Publications (2)

Publication Number Publication Date
JPS643663A true JPS643663A (en) 1989-01-09
JPH052981B2 JPH052981B2 (en) 1993-01-13

Family

ID=15660512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15792787A Granted JPS643663A (en) 1987-06-26 1987-06-26 Forming method for fine pattern

Country Status (1)

Country Link
JP (1) JPS643663A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0324550A (en) * 1989-06-22 1991-02-01 Toshiba Corp Pattern forming method
JPH03293623A (en) * 1989-12-29 1991-12-25 American Teleph & Telegr Co <Att> Optical element with diffraction grating
EP1906229A3 (en) * 2006-01-20 2008-04-23 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
US7749916B2 (en) 2006-01-20 2010-07-06 Palo Alto Research Center Incorporated Additive printed mask process and structures produced thereby
KR20140001989A (en) * 2010-12-27 2014-01-07 브레우어 사이언스 인코포레이션 Processes to pattern small features for advanced patterning needs
JP2015090908A (en) * 2013-11-06 2015-05-11 大日本印刷株式会社 Patterning method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0324550A (en) * 1989-06-22 1991-02-01 Toshiba Corp Pattern forming method
JPH03293623A (en) * 1989-12-29 1991-12-25 American Teleph & Telegr Co <Att> Optical element with diffraction grating
EP1906229A3 (en) * 2006-01-20 2008-04-23 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
US7498119B2 (en) 2006-01-20 2009-03-03 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
US7749916B2 (en) 2006-01-20 2010-07-06 Palo Alto Research Center Incorporated Additive printed mask process and structures produced thereby
KR20140001989A (en) * 2010-12-27 2014-01-07 브레우어 사이언스 인코포레이션 Processes to pattern small features for advanced patterning needs
JP2014507795A (en) * 2010-12-27 2014-03-27 ブルーワー サイエンス アイ エヌ シー． Small feature patterning process required for advanced patterning
US9960038B2 (en) 2010-12-27 2018-05-01 Brewer Science, Inc. Processes to pattern small features for advanced patterning needs
JP2015090908A (en) * 2013-11-06 2015-05-11 大日本印刷株式会社 Patterning method

Also Published As

Publication number Publication date
JPH052981B2 (en) 1993-01-13

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