JPS6446932A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6446932A
JPS6446932A JP20378187A JP20378187A JPS6446932A JP S6446932 A JPS6446932 A JP S6446932A JP 20378187 A JP20378187 A JP 20378187A JP 20378187 A JP20378187 A JP 20378187A JP S6446932 A JPS6446932 A JP S6446932A
Authority
JP
Japan
Prior art keywords
film
etched
metallic silicide
resist
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20378187A
Other languages
Japanese (ja)
Other versions
JPH0738389B2 (en
Inventor
Shuichi Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20378187A priority Critical patent/JPH0738389B2/en
Publication of JPS6446932A publication Critical patent/JPS6446932A/en
Publication of JPH0738389B2 publication Critical patent/JPH0738389B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate the need for another process for removing a low reflecting film, and to form a fine pattern accurately by forming a metallic silicide nitride film or a metallic silicide oxynitride film onto a film to be etched and getting rid of a resist and the metallic silicide nitride film or the metallic silicide oxynitride film at a time. CONSTITUTION:A film to be etched 12 is shaped onto a semiconductor substrate or an oxide film 11, a metallic silicide nitride film or a metallic silicide oxynitride film 13 is formed onto the film 12, and a resist film 14 is shaped onto the film 13 and a fine pattern is formed. The nitride film 13 is etched, using the resist film 14 as an etching mask, and the film to be etched 12 is etched, employing the resist film 14 and the nitride film 13 as etching masks. The resist film 14 and the nitride film 13 are taken off at a time. Accordingly, the number of processes can be decreased, and a fine pattern can easily be formed accurately without damaging the substrate, etc.
JP20378187A 1987-08-17 1987-08-17 Method for manufacturing semiconductor device Expired - Lifetime JPH0738389B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20378187A JPH0738389B2 (en) 1987-08-17 1987-08-17 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20378187A JPH0738389B2 (en) 1987-08-17 1987-08-17 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6446932A true JPS6446932A (en) 1989-02-21
JPH0738389B2 JPH0738389B2 (en) 1995-04-26

Family

ID=16479668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20378187A Expired - Lifetime JPH0738389B2 (en) 1987-08-17 1987-08-17 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH0738389B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100479960B1 (en) * 2002-06-17 2005-03-30 동부아남반도체 주식회사 Method for forming diffused reflection film for the photo-resist pattern to be form precisely
EP2202578A1 (en) * 2008-12-25 2010-06-30 National Institute of Advanced Industrial Science and Technology Etching resist
CN102199333A (en) * 2010-03-22 2011-09-28 苏州美克思科技发展有限公司 Method for manufacturing advanced reinforced phenolic honeycomb core composite material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100479960B1 (en) * 2002-06-17 2005-03-30 동부아남반도체 주식회사 Method for forming diffused reflection film for the photo-resist pattern to be form precisely
EP2202578A1 (en) * 2008-12-25 2010-06-30 National Institute of Advanced Industrial Science and Technology Etching resist
JP2010152105A (en) * 2008-12-25 2010-07-08 National Institute Of Advanced Industrial Science & Technology Etching resist
US8734964B2 (en) 2008-12-25 2014-05-27 National Institute Of Advanced Industrial Science And Technology Etching resist
CN102199333A (en) * 2010-03-22 2011-09-28 苏州美克思科技发展有限公司 Method for manufacturing advanced reinforced phenolic honeycomb core composite material

Also Published As

Publication number Publication date
JPH0738389B2 (en) 1995-04-26

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