JPS6469031A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6469031A
JPS6469031A JP22685587A JP22685587A JPS6469031A JP S6469031 A JPS6469031 A JP S6469031A JP 22685587 A JP22685587 A JP 22685587A JP 22685587 A JP22685587 A JP 22685587A JP S6469031 A JPS6469031 A JP S6469031A
Authority
JP
Japan
Prior art keywords
etching
film
insulating film
contact hole
whole surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22685587A
Other languages
Japanese (ja)
Inventor
Atsushi Koshio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP22685587A priority Critical patent/JPS6469031A/en
Publication of JPS6469031A publication Critical patent/JPS6469031A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a contact hole, a corner of which is inclined, uniformly by vertically shaping the contact hole to a first insulating film through dry etching and vertically dry-etching the whole surface of a second insulating film through a CVD method. CONSTITUTION:A semiconductor element formed is placed on a dry etching device, the mixed gas of CHF3 and O2 is used as a reaction gas and a PSG film 2 as an insulating film is etched vertically. A photoresist film 3 as an etching mask is removed, the semiconductor element is placed on a decompression CVD device, and a high-temperature deposit oxide film (HTO film) 4 having excellent step coverage is deposited on the whole surface of the element by employing the reaction gas of SiH4 and H2O. The semiconductor element is placed on the dry etching device again, and the whole surface is etched vertically until a semiconductor substrate 1 is exposed under the same conditions of etching as the insulating film 2 is etched. A contact hole, corners of which are inclined, is shaped through the etching treatment.
JP22685587A 1987-09-10 1987-09-10 Manufacture of semiconductor device Pending JPS6469031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22685587A JPS6469031A (en) 1987-09-10 1987-09-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22685587A JPS6469031A (en) 1987-09-10 1987-09-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6469031A true JPS6469031A (en) 1989-03-15

Family

ID=16851624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22685587A Pending JPS6469031A (en) 1987-09-10 1987-09-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6469031A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082801A (en) * 1989-03-10 1992-01-21 Fujitsu Limited Process for producing multilayer interconnection for semiconductor device with interlayer mechanical stress prevention and insulating layers
US5151376A (en) * 1990-05-31 1992-09-29 Sgs-Thomson Microelectronics, Inc. Method of making polycrystalline silicon resistors for integrated circuits
KR100502488B1 (en) * 2002-11-15 2005-07-20 현대자동차주식회사 Fuel filler door of automobile

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163446A (en) * 1984-02-02 1985-08-26 Pioneer Electronic Corp Formation of through hole
JPS61222236A (en) * 1985-03-28 1986-10-02 Toshiba Corp Semiconductor device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163446A (en) * 1984-02-02 1985-08-26 Pioneer Electronic Corp Formation of through hole
JPS61222236A (en) * 1985-03-28 1986-10-02 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082801A (en) * 1989-03-10 1992-01-21 Fujitsu Limited Process for producing multilayer interconnection for semiconductor device with interlayer mechanical stress prevention and insulating layers
US5151376A (en) * 1990-05-31 1992-09-29 Sgs-Thomson Microelectronics, Inc. Method of making polycrystalline silicon resistors for integrated circuits
KR100502488B1 (en) * 2002-11-15 2005-07-20 현대자동차주식회사 Fuel filler door of automobile

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