JPS6469031A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6469031A JPS6469031A JP22685587A JP22685587A JPS6469031A JP S6469031 A JPS6469031 A JP S6469031A JP 22685587 A JP22685587 A JP 22685587A JP 22685587 A JP22685587 A JP 22685587A JP S6469031 A JPS6469031 A JP S6469031A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- insulating film
- contact hole
- whole surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a contact hole, a corner of which is inclined, uniformly by vertically shaping the contact hole to a first insulating film through dry etching and vertically dry-etching the whole surface of a second insulating film through a CVD method. CONSTITUTION:A semiconductor element formed is placed on a dry etching device, the mixed gas of CHF3 and O2 is used as a reaction gas and a PSG film 2 as an insulating film is etched vertically. A photoresist film 3 as an etching mask is removed, the semiconductor element is placed on a decompression CVD device, and a high-temperature deposit oxide film (HTO film) 4 having excellent step coverage is deposited on the whole surface of the element by employing the reaction gas of SiH4 and H2O. The semiconductor element is placed on the dry etching device again, and the whole surface is etched vertically until a semiconductor substrate 1 is exposed under the same conditions of etching as the insulating film 2 is etched. A contact hole, corners of which are inclined, is shaped through the etching treatment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22685587A JPS6469031A (en) | 1987-09-10 | 1987-09-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22685587A JPS6469031A (en) | 1987-09-10 | 1987-09-10 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6469031A true JPS6469031A (en) | 1989-03-15 |
Family
ID=16851624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22685587A Pending JPS6469031A (en) | 1987-09-10 | 1987-09-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6469031A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5082801A (en) * | 1989-03-10 | 1992-01-21 | Fujitsu Limited | Process for producing multilayer interconnection for semiconductor device with interlayer mechanical stress prevention and insulating layers |
US5151376A (en) * | 1990-05-31 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Method of making polycrystalline silicon resistors for integrated circuits |
KR100502488B1 (en) * | 2002-11-15 | 2005-07-20 | 현대자동차주식회사 | Fuel filler door of automobile |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60163446A (en) * | 1984-02-02 | 1985-08-26 | Pioneer Electronic Corp | Formation of through hole |
JPS61222236A (en) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | Semiconductor device and manufacture thereof |
-
1987
- 1987-09-10 JP JP22685587A patent/JPS6469031A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60163446A (en) * | 1984-02-02 | 1985-08-26 | Pioneer Electronic Corp | Formation of through hole |
JPS61222236A (en) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | Semiconductor device and manufacture thereof |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5082801A (en) * | 1989-03-10 | 1992-01-21 | Fujitsu Limited | Process for producing multilayer interconnection for semiconductor device with interlayer mechanical stress prevention and insulating layers |
US5151376A (en) * | 1990-05-31 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Method of making polycrystalline silicon resistors for integrated circuits |
KR100502488B1 (en) * | 2002-11-15 | 2005-07-20 | 현대자동차주식회사 | Fuel filler door of automobile |
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