JPS6435917A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6435917A JPS6435917A JP19176287A JP19176287A JPS6435917A JP S6435917 A JPS6435917 A JP S6435917A JP 19176287 A JP19176287 A JP 19176287A JP 19176287 A JP19176287 A JP 19176287A JP S6435917 A JPS6435917 A JP S6435917A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sidewall
- silicon oxide
- oxide film
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE:To enable a fine contact hole to be made regardless of the limit of the photolithographic performance by a method wherein a silicon oxide film below a sidewall of an oxide film formed on the side of a fluoric acid resistant film is etched away through the intermediary of the sidewall. CONSTITUTION:A photoresist film 3 as fluoric acid resistant film formed on an silicon oxide film 2 on a silicon substrate is patterned to remove specified part. The silicon oxide film 2 is formed on overall surface of the photoresist film 3 and then a sidewall 4 comprising silicon oxide is formed on the side of the photoresist film 3 by anisotropical etching process. Next, another photoresist film 5 coated on overall surface is etched away to expose the surface of the sidewall 4 to the part above the surface of photoresist film 5A. Then the side-wall 4 and the silicon oxide film 2 below the sidewall 4 are etched away to make a contact hole 6. Finally, the photoresist films 3, 5A are removed. Through these procedures, the fine contact hole can be made regardless of the limit of the photolithographic performance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19176287A JPS6435917A (en) | 1987-07-30 | 1987-07-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19176287A JPS6435917A (en) | 1987-07-30 | 1987-07-30 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6435917A true JPS6435917A (en) | 1989-02-07 |
Family
ID=16280088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19176287A Pending JPS6435917A (en) | 1987-07-30 | 1987-07-30 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6435917A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5254503A (en) * | 1992-06-02 | 1993-10-19 | International Business Machines Corporation | Process of making and using micro mask |
US5595941A (en) * | 1994-06-01 | 1997-01-21 | Mitsubishi Denki Kabushiki Kaisha | Method of forming fine patterns |
-
1987
- 1987-07-30 JP JP19176287A patent/JPS6435917A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5254503A (en) * | 1992-06-02 | 1993-10-19 | International Business Machines Corporation | Process of making and using micro mask |
US5595941A (en) * | 1994-06-01 | 1997-01-21 | Mitsubishi Denki Kabushiki Kaisha | Method of forming fine patterns |
US5688723A (en) * | 1994-06-01 | 1997-11-18 | Mitsubishi Denki Kabushiki Kaisha | Method of forming fine patterns |
US5710066A (en) * | 1994-06-01 | 1998-01-20 | Mitsubishi Denki Kabushiki Kaisha | Method of forming fine patterns |
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