JPS568824A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS568824A
JPS568824A JP8457579A JP8457579A JPS568824A JP S568824 A JPS568824 A JP S568824A JP 8457579 A JP8457579 A JP 8457579A JP 8457579 A JP8457579 A JP 8457579A JP S568824 A JPS568824 A JP S568824A
Authority
JP
Japan
Prior art keywords
substance
etched
mask
film
fine pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8457579A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Wataru Wakamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8457579A priority Critical patent/JPS568824A/en
Publication of JPS568824A publication Critical patent/JPS568824A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To easily form an oblique surface on a substance to be etched by etching the substance provided on a semiconductor substrate with a mask, removing partly the mask on the midway of etching step when forming a fine pattern, and again etching it. CONSTITUTION:When a substance 2 to be etched and coated on a semiconductor substrate 1 is etched to form a fine pattern, a mask of a resist film in predetermined shape is formed initially on the substance 2. With the mask the substance 2 is etched on the midway, the substrate 1 is placed in this state in an oxygen plasma to remove the surface of the film 3 so as to form a film 3' reduced in shape therefrom. With the film 3' as a mask partly removed it is again etched to obtain the fine pattern of the substance 2 having an oblique on the side surface. In this manner, the oblique surface of the substance 2 can be simply formed to easily avoid the disconnection of the metallic wire formed thereon.
JP8457579A 1979-07-02 1979-07-02 Manufacture of semiconductor device Pending JPS568824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8457579A JPS568824A (en) 1979-07-02 1979-07-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8457579A JPS568824A (en) 1979-07-02 1979-07-02 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS568824A true JPS568824A (en) 1981-01-29

Family

ID=13834465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8457579A Pending JPS568824A (en) 1979-07-02 1979-07-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS568824A (en)

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