JPS6455826A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6455826A
JPS6455826A JP21336387A JP21336387A JPS6455826A JP S6455826 A JPS6455826 A JP S6455826A JP 21336387 A JP21336387 A JP 21336387A JP 21336387 A JP21336387 A JP 21336387A JP S6455826 A JPS6455826 A JP S6455826A
Authority
JP
Japan
Prior art keywords
periphery
photoresist
forming chip
patterned
completely forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21336387A
Other languages
Japanese (ja)
Inventor
Mamoru Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21336387A priority Critical patent/JPS6455826A/en
Publication of JPS6455826A publication Critical patent/JPS6455826A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve uniformity of etching surface by patterning a photoresist of a part which does not become a completely forming chip at the periphery of a semiconductor substrate in the form of removing the photoresist at the part. CONSTITUTION:A photoresist at the periphery of a semiconductor substrate which does not become a completely forming chip is so patterned on the whole surface including the periphery as not to retain in the same shape or patterned to remove the photoresist of the periphery. A region 2 along the periphery of a substrate 1 in a predetermined width is a part in which the photoresist is removed by exposing through a mask in which the part corresponding to the periphery is transparent, and the inside of the periphery 2 is a region 3 in which the photoresist of the part not becoming a completely forming chip remains and a region 4 in which the completely forming chip is patterned. Thus, the quantity of the photoresist of the periphery is reduced to improve the uniformity of etching rate of the substrate surface.
JP21336387A 1987-08-26 1987-08-26 Manufacture of semiconductor device Pending JPS6455826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21336387A JPS6455826A (en) 1987-08-26 1987-08-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21336387A JPS6455826A (en) 1987-08-26 1987-08-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6455826A true JPS6455826A (en) 1989-03-02

Family

ID=16637939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21336387A Pending JPS6455826A (en) 1987-08-26 1987-08-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6455826A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194312B1 (en) 1997-07-10 2001-02-27 Nec Corporation Semiconductor device and method of manufacturing the same
WO2006028673A1 (en) * 2004-09-03 2006-03-16 Lam Research Corporation Etch with uniformity control

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194312B1 (en) 1997-07-10 2001-02-27 Nec Corporation Semiconductor device and method of manufacturing the same
WO2006028673A1 (en) * 2004-09-03 2006-03-16 Lam Research Corporation Etch with uniformity control

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