JPS6425986A - Selective formation of silicon dioxide film - Google Patents

Selective formation of silicon dioxide film

Info

Publication number
JPS6425986A
JPS6425986A JP18145887A JP18145887A JPS6425986A JP S6425986 A JPS6425986 A JP S6425986A JP 18145887 A JP18145887 A JP 18145887A JP 18145887 A JP18145887 A JP 18145887A JP S6425986 A JPS6425986 A JP S6425986A
Authority
JP
Japan
Prior art keywords
silicon dioxide
base material
dioxide film
contact
org
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18145887A
Other languages
Japanese (ja)
Other versions
JP2689431B2 (en
Inventor
Takuji Aida
Akimitsu Muginuma
Hideo Kawahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Priority to JP62181458A priority Critical patent/JP2689431B2/en
Publication of JPS6425986A publication Critical patent/JPS6425986A/en
Application granted granted Critical
Publication of JP2689431B2 publication Critical patent/JP2689431B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemically Coating (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To selectively form a silicon dioxide film having high working accuracy at a low production cost when an aq. hydrosilicofluoric acid soln. contg. silicon dioxide in a supersatd. state is brought into contact with a base material to deposit a silicon dioxide film on the surface of the base material, by forming a patterned mask of an org. substance on the surface of the base material before the contact. CONSTITUTION:An aq. hydrosilicofluoric acid soln. contg. silicon dioxide in a supersatd. state as a treating soln. is brought into contact with a base material to deposit a silicon dioxide film on the surface of the base material. At this time, a patterned mask of an org. substance is formed on the surface of the base material and the base material is brought into contact with the treating soln. The org. substance is preferably photosensitive resin and patterning is preferably carried out by photolithography from the viewpoint of working accuracy.
JP62181458A 1987-07-21 1987-07-21 Method for selectively forming silicon dioxide film Expired - Fee Related JP2689431B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181458A JP2689431B2 (en) 1987-07-21 1987-07-21 Method for selectively forming silicon dioxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181458A JP2689431B2 (en) 1987-07-21 1987-07-21 Method for selectively forming silicon dioxide film

Publications (2)

Publication Number Publication Date
JPS6425986A true JPS6425986A (en) 1989-01-27
JP2689431B2 JP2689431B2 (en) 1997-12-10

Family

ID=16101110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181458A Expired - Fee Related JP2689431B2 (en) 1987-07-21 1987-07-21 Method for selectively forming silicon dioxide film

Country Status (1)

Country Link
JP (1) JP2689431B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270233A (en) * 1991-06-25 1993-12-14 Nec Corporation Method for manufacturing field effect transistor having LDD structure
JPH05347365A (en) * 1992-06-15 1993-12-27 Nec Corp Semiconductor device and its manufacture
US5543252A (en) * 1991-03-29 1996-08-06 Kabushiki Kaisha Toshiba Method for manufacturing exposure mask and the exposure mask
JP2004323946A (en) * 2003-04-28 2004-11-18 New Industry Research Organization Micropatterning method by liquid phase deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196744A (en) * 1981-05-29 1982-12-02 Nippon Sheet Glass Co Ltd Surface treatment of glass containing alkali metal
JPS61236634A (en) * 1985-04-09 1986-10-21 Shirakawa Kosumosu Denki Kk Production of transparent electrode for display device
JPS6290998A (en) * 1985-10-03 1987-04-25 日本曹達株式会社 Photosetting resist resin compound for nonelectrolytic plating

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196744A (en) * 1981-05-29 1982-12-02 Nippon Sheet Glass Co Ltd Surface treatment of glass containing alkali metal
JPS61236634A (en) * 1985-04-09 1986-10-21 Shirakawa Kosumosu Denki Kk Production of transparent electrode for display device
JPS6290998A (en) * 1985-10-03 1987-04-25 日本曹達株式会社 Photosetting resist resin compound for nonelectrolytic plating

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543252A (en) * 1991-03-29 1996-08-06 Kabushiki Kaisha Toshiba Method for manufacturing exposure mask and the exposure mask
US5270233A (en) * 1991-06-25 1993-12-14 Nec Corporation Method for manufacturing field effect transistor having LDD structure
JPH05347365A (en) * 1992-06-15 1993-12-27 Nec Corp Semiconductor device and its manufacture
JP2004323946A (en) * 2003-04-28 2004-11-18 New Industry Research Organization Micropatterning method by liquid phase deposition

Also Published As

Publication number Publication date
JP2689431B2 (en) 1997-12-10

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees