JPS6450531A - Formation of fine pattern - Google Patents
Formation of fine patternInfo
- Publication number
- JPS6450531A JPS6450531A JP20872687A JP20872687A JPS6450531A JP S6450531 A JPS6450531 A JP S6450531A JP 20872687 A JP20872687 A JP 20872687A JP 20872687 A JP20872687 A JP 20872687A JP S6450531 A JPS6450531 A JP S6450531A
- Authority
- JP
- Japan
- Prior art keywords
- film
- solid phase
- pattern
- phase film
- underlying structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE:To enable patterns smaller, than a minimum pattern size determined by essential characteristics of a used exposure technique to be formed as transfer patterns collectively and stably, by depositing and patterning a solid phase film whose volume expands by modification, and modifying the side faces of the pattern of the solid phase film before transferring the pattern on an underlying structure. CONSTITUTION:A solid phase film 6 is deposited on an underlying structure 1. The solid phase film 6 is such that when it is subjected to a certain modifying process, its modification progresses from the surface while causing expansion in volume. The solid phase film 6 is then patterned by a lithography process followed by an etching process. Then, the side faces of the solid phase film patterns are modified by said modifying process and the pattern in the solid phase film 6 is transferred to the underlying structure 1 by the subsequent etching process. According to an emobodiment, a polysilicon film 6 is formed on the underlying structure 1 through a CVD oxide film 5, and a nitride film 7 is formed thereon. After a blank pattern is formed in the films 6 and 7, a thermally oxidized film 9 is deposited on the side faces of the film 6. The blank pattern reduced in size by the oxide film 9 is then transferred on the CVD oxide film 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20872687A JPS6450531A (en) | 1987-08-21 | 1987-08-21 | Formation of fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20872687A JPS6450531A (en) | 1987-08-21 | 1987-08-21 | Formation of fine pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450531A true JPS6450531A (en) | 1989-02-27 |
Family
ID=16561065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20872687A Pending JPS6450531A (en) | 1987-08-21 | 1987-08-21 | Formation of fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450531A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008053706A (en) * | 2006-08-24 | 2008-03-06 | Dongbu Hitek Co Ltd | Semiconductor device and method for manufacturing it |
| JP2010106519A (en) * | 2008-10-30 | 2010-05-13 | Otis:Kk | Rain chain |
| JP2016171355A (en) * | 2010-02-26 | 2016-09-23 | 株式会社半導体エネルギー研究所 | Manufacturing method for semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61285725A (en) * | 1985-06-13 | 1986-12-16 | Oki Electric Ind Co Ltd | Formation of fine pattern |
-
1987
- 1987-08-21 JP JP20872687A patent/JPS6450531A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61285725A (en) * | 1985-06-13 | 1986-12-16 | Oki Electric Ind Co Ltd | Formation of fine pattern |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008053706A (en) * | 2006-08-24 | 2008-03-06 | Dongbu Hitek Co Ltd | Semiconductor device and method for manufacturing it |
| JP2010106519A (en) * | 2008-10-30 | 2010-05-13 | Otis:Kk | Rain chain |
| JP2016171355A (en) * | 2010-02-26 | 2016-09-23 | 株式会社半導体エネルギー研究所 | Manufacturing method for semiconductor device |
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