JPS649618A - Pattern formation - Google Patents

Pattern formation

Info

Publication number
JPS649618A
JPS649618A JP62165760A JP16576087A JPS649618A JP S649618 A JPS649618 A JP S649618A JP 62165760 A JP62165760 A JP 62165760A JP 16576087 A JP16576087 A JP 16576087A JP S649618 A JPS649618 A JP S649618A
Authority
JP
Japan
Prior art keywords
mask
resist
film
pullulan
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62165760A
Other languages
Japanese (ja)
Inventor
Masataka Endo
Masaru Sasako
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62165760A priority Critical patent/JPS649618A/en
Publication of JPS649618A publication Critical patent/JPS649618A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To prevent damage of a pattern due to attachment of a resist film and a mask in contact exposure, by forming a film comprising a mixture of water soluble polymer on resist. CONSTITUTION:Resist 2 is applied on a substrate 1, and prebaking is performed at 90 deg.C. Then, 10% aqueous solution of a mixture of pullulan and polyvinylpyrrolidone is applied. Thereafter, a desired mask 4 is tightly attached on a pullulan film 3. Exposure is performed with mercury light 5. Then, the mask 4 is removed. The pullulan film 3 is removed by immersing phenomenon. At the same, a resist pattern is formed. At this time, a pattern 2a is not damaged with the mask.
JP62165760A 1987-07-02 1987-07-02 Pattern formation Pending JPS649618A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62165760A JPS649618A (en) 1987-07-02 1987-07-02 Pattern formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165760A JPS649618A (en) 1987-07-02 1987-07-02 Pattern formation

Publications (1)

Publication Number Publication Date
JPS649618A true JPS649618A (en) 1989-01-12

Family

ID=15818524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165760A Pending JPS649618A (en) 1987-07-02 1987-07-02 Pattern formation

Country Status (1)

Country Link
JP (1) JPS649618A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02108056A (en) * 1988-10-17 1990-04-19 Nec Corp Production of semiconductor device
JPH04163456A (en) * 1990-10-26 1992-06-09 Nec Kyushu Ltd Reticle washing device
JPH04186351A (en) * 1990-11-21 1992-07-03 Nec Kyushu Ltd Cleaning of reticle
US5158616A (en) * 1988-07-22 1992-10-27 Tokyo Electron Limited Apparatus for cleaning a substrate
JPH05188598A (en) * 1991-06-28 1993-07-30 Internatl Business Mach Corp <Ibm> Coating film for preventing surface reflection
JP2009523322A (en) * 2006-01-11 2009-06-18 マイクロン テクノロジー， インク． Photolithographic system and method for producing sub-diffraction limited features
US8080364B2 (en) 2003-05-09 2011-12-20 Panasonic Corporation Pattern formation method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158616A (en) * 1988-07-22 1992-10-27 Tokyo Electron Limited Apparatus for cleaning a substrate
JPH02108056A (en) * 1988-10-17 1990-04-19 Nec Corp Production of semiconductor device
JPH04163456A (en) * 1990-10-26 1992-06-09 Nec Kyushu Ltd Reticle washing device
JPH04186351A (en) * 1990-11-21 1992-07-03 Nec Kyushu Ltd Cleaning of reticle
JPH05188598A (en) * 1991-06-28 1993-07-30 Internatl Business Mach Corp <Ibm> Coating film for preventing surface reflection
US8080364B2 (en) 2003-05-09 2011-12-20 Panasonic Corporation Pattern formation method
JP2009523322A (en) * 2006-01-11 2009-06-18 マイクロン テクノロジー， インク． Photolithographic system and method for producing sub-diffraction limited features

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