JPH04186351A - Cleaning of reticle - Google Patents

Cleaning of reticle

Info

Publication number
JPH04186351A
JPH04186351A JP2316964A JP31696490A JPH04186351A JP H04186351 A JPH04186351 A JP H04186351A JP 2316964 A JP2316964 A JP 2316964A JP 31696490 A JP31696490 A JP 31696490A JP H04186351 A JPH04186351 A JP H04186351A
Authority
JP
Japan
Prior art keywords
reticle
cleaning
cleaning liquid
cleanliness
arm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2316964A
Other languages
Japanese (ja)
Inventor
Tatsuo Ikeda
池田 達生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP2316964A priority Critical patent/JPH04186351A/en
Publication of JPH04186351A publication Critical patent/JPH04186351A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To improve the cleanliness of a reticle by radiating the ultraviolet rays on the obverse and reverse surfaces of the reticle. CONSTITUTION:A reticle 3 supported on a reticle arm 4 is introduced into an ultraviolet ray radiation box 14 in the foreprocessing, and radiated for a certain time by an ultraviolet ray lamp 6. Then, the reticle 3 is transferred into a reticle cleaning box 15, and the surface of the reticle is rubbed by the revolution of a cleaning brush 2, allowing cleaning liquid 11 to flow on the surface of the reticle 3, and the surface of the reticle is washed by vertically moving the reticle arm 4, and rubbed by the cleaning brush 2, allowing pure water to flow, and then the cleaning liquid 1 is removed. Accordingly, the surface having the water repellency becomes hydrophilic because the chemically organic substance is decomposed, and the affinity with the cleaning liquid is improved, and the dust adhering on the pattern edge part can be removed easily. Accordingly, the cleanliness of the surface of the reticle can be improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造工程に用いるレチクルの洗浄
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for cleaning a reticle used in a manufacturing process of a semiconductor device.

〔従来の技術〕[Conventional technology]

従来のレチクルの洗浄方法は洗浄液を流しながら一定方
向に回転をつづける洗浄ブラシにレチクルの表面が触れ
る様にしながらレチクルを上下に移動させ、レチクル表
面を洗浄していた。
In the conventional reticle cleaning method, the reticle surface was cleaned by moving the reticle up and down so that the surface of the reticle was in contact with a cleaning brush that continued to rotate in a fixed direction while flowing a cleaning solution.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のレチクルの洗浄方法は、洗浄ブラシにより、レチ
クルの表面に付着した塵埃、汚れを物理的に除去させよ
うとするものであるが、微小なごみでは、ブラシが一定
方向に回転している為、レチクルのクローム面のパター
ンエツジの片側にごみがトラップされて除去されない場
合や、有機物では、レチクル表面が捩水状態である為、
洗浄液とのなじみが悪くなり、完全には除去されない場
合があるなど、レチクル表面の清浄度が充分でないとい
う問題点があった。その為、この様なレチクルを使用し
て半導体基板上に投影縮小露光した場合には、形成され
たパターンには、パターンショートなどの欠陥を生じて
半導体装置の歩留や信頼性が低下するという問題点があ
った。
Conventional reticle cleaning methods use a cleaning brush to physically remove dust and dirt adhering to the reticle surface, but when it comes to small particles, the brush rotates in a fixed direction. If dirt is trapped on one side of the pattern edge of the chrome surface of the reticle and cannot be removed, or if it is organic matter, the reticle surface is in a water-twisted state.
There was a problem that the cleanliness of the reticle surface was not sufficient, such as poor compatibility with the cleaning solution and complete removal in some cases. Therefore, when such a reticle is used to perform projection reduction exposure on a semiconductor substrate, defects such as pattern shorts may occur in the formed pattern, reducing the yield and reliability of semiconductor devices. There was a problem.

本発明の目的は、レチクルの洗浄度を向上させるレチク
ルの洗浄方法を提供することにある。
An object of the present invention is to provide a reticle cleaning method that improves the degree of reticle cleaning.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のレチクル洗浄方法は、洗浄液を流しなから洗浄
ブラシによりレチクル表面を洗浄し塵埃や汚れを除去す
る工程を有するレチクルの洗浄方法に於いて、前記レチ
クルの表面及び裏面に紫外線を照射する工程を含んで構
成される。
The reticle cleaning method of the present invention includes a step of cleaning the reticle surface with a cleaning brush to remove dust and dirt without flowing a cleaning solution, and a step of irradiating the front and back surfaces of the reticle with ultraviolet rays. It consists of:

・、実施例〕 次に本発明について図面を参照して説明する。·,Example〕 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例を示す模式図である。FIG. 1 is a schematic diagram showing an embodiment of the present invention.

第1図に示すように、レチクルアーム4に支持されたレ
チクル3はまず前処理として紫外線照射ボックス14中
に取り込まれ、紫外線ランプ6にて一定時間照射される
。この間、紫外線照射ボックス14内は03が発生する
ので排気管13で、03の排気を行なう。次に、レチク
ル3は、レチクル洗浄ボックス15内に移され、洗浄液
11をレチクル3の表面に流しながら、洗浄ブラシ2を
回転させてレチクルの表面をこすり、且つレチクルアー
ム4を上下させてレチクル3の表面を洗浄した後純水を
流しながら洗浄ブラシ2でこすり洗浄液1を除去する。
As shown in FIG. 1, the reticle 3 supported by the reticle arm 4 is first taken into an ultraviolet irradiation box 14 as a pretreatment and is irradiated with an ultraviolet lamp 6 for a certain period of time. During this time, since 03 is generated inside the ultraviolet irradiation box 14, the 03 is exhausted through the exhaust pipe 13. Next, the reticle 3 is moved into the reticle cleaning box 15, and while the cleaning liquid 11 is flowing onto the surface of the reticle 3, the cleaning brush 2 is rotated to scrub the surface of the reticle, and the reticle arm 4 is moved up and down to clean the reticle 3. After cleaning the surface, the cleaning liquid 1 is removed by rubbing with a cleaning brush 2 while running pure water.

次に、レチクル3は、乾燥ボックス12内に移され、ア
ルコール蒸気にてし千クル3の表面の水分を取り去り表
面の乾燥を行なう。
Next, the reticle 3 is moved into a drying box 12, and the moisture on the surface of the reticle 3 is removed using alcohol vapor to dry the surface.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、洗浄に先立ちレチクル表
面を紫外線照射することにより、撥水性を示していた表
面は、化学的に有機物か分解されて、親水性となり、洗
浄液とのなじみか向上し、パターンエツジ部に付着して
いた塵埃を容易に除去することができるようになった。
As explained above, in the present invention, by irradiating the reticle surface with ultraviolet rays prior to cleaning, the water-repellent surface chemically decomposes organic substances, becomes hydrophilic, and improves compatibility with the cleaning liquid. It became possible to easily remove dust adhering to the pattern edges.

同時に前に述べた様に油汚れも分解することができる。At the same time, as mentioned earlier, oil stains can also be broken down.

これらを効果に加え、物理的に洗浄ブラシを用いレチク
ル表面を洗浄処理をほどこすことによる相乗効果でレチ
クル表面の清浄度を向上させることができるという効果
を有する。これらの効果により半導体基板上に投影縮小
露光されるパターンの欠陥を低減することができ、IC
の歩留や品質を向上させることができる。
In addition to these effects, the cleanliness of the reticle surface can be improved by the synergistic effect of physically cleaning the reticle surface using a cleaning brush. These effects make it possible to reduce defects in the pattern projected and reduced by exposure on the semiconductor substrate, and the IC
can improve yield and quality.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す模式図である9 1・・・洗浄液、2・・・洗浄ブラシ、3・・・レチク
ル、4・・・レチクル運搬アーム、5・・・洗浄液排出
管、6・・・紫外線ランプ、7・・・純水、8・・・ヒ
ータ、9・・・アルコール、10・・・アルコール排出
管、11・・・冷却管、12・・・乾燥ボックス、13
・・・排気管、14・・・紫外線照射ボックス、15・
・・レチクル洗浄ボックス。 代理人 弁理士  内 原  音 月 1 図
FIG. 1 is a schematic diagram showing an embodiment of the present invention 9 1...Cleaning liquid, 2...Cleaning brush, 3...Reticle, 4...Reticle carrying arm, 5...Cleaning liquid discharge Tube, 6... Ultraviolet lamp, 7... Pure water, 8... Heater, 9... Alcohol, 10... Alcohol discharge pipe, 11... Cooling tube, 12... Drying box, 13
...Exhaust pipe, 14...Ultraviolet irradiation box, 15.
...Reticle cleaning box. Agent Patent Attorney Otsuki Uchihara 1 Figure

Claims (1)

【特許請求の範囲】[Claims] 洗浄液を流しながら洗浄ブラシによりレチクル表面を洗
浄し塵埃や汚れを除去する工程を有するレチクルの洗浄
方法に於いて、前記レチクルの表面及び裏面に紫外線を
照射する工程を含むことを特徴とするレチクルの洗浄方
法。
A reticle cleaning method comprising the step of cleaning the reticle surface with a cleaning brush to remove dust and dirt while flowing a cleaning solution, the reticle cleaning method comprising the step of irradiating the front and back surfaces of the reticle with ultraviolet rays. Cleaning method.
JP2316964A 1990-11-21 1990-11-21 Cleaning of reticle Pending JPH04186351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2316964A JPH04186351A (en) 1990-11-21 1990-11-21 Cleaning of reticle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2316964A JPH04186351A (en) 1990-11-21 1990-11-21 Cleaning of reticle

Publications (1)

Publication Number Publication Date
JPH04186351A true JPH04186351A (en) 1992-07-03

Family

ID=18082903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2316964A Pending JPH04186351A (en) 1990-11-21 1990-11-21 Cleaning of reticle

Country Status (1)

Country Link
JP (1) JPH04186351A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04298747A (en) * 1991-03-28 1992-10-22 Nec Corp Washing method for photomask
JP2012211951A (en) * 2011-03-30 2012-11-01 Shin Etsu Chem Co Ltd Method and device for cleaning photomask-related substrate
CN114798599A (en) * 2022-04-15 2022-07-29 深圳市华星光电半导体显示技术有限公司 Mask plate cleaning equipment and mask plate cleaning method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63249146A (en) * 1987-04-03 1988-10-17 Mitsubishi Electric Corp Mask cleaning device
JPS63271938A (en) * 1987-04-28 1988-11-09 Hoya Corp Cleaning of hard surface
JPS649618A (en) * 1987-07-02 1989-01-12 Matsushita Electric Ind Co Ltd Pattern formation
JPH02966A (en) * 1988-06-06 1990-01-05 Nec Corp Reticle cleaning device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63249146A (en) * 1987-04-03 1988-10-17 Mitsubishi Electric Corp Mask cleaning device
JPS63271938A (en) * 1987-04-28 1988-11-09 Hoya Corp Cleaning of hard surface
JPS649618A (en) * 1987-07-02 1989-01-12 Matsushita Electric Ind Co Ltd Pattern formation
JPH02966A (en) * 1988-06-06 1990-01-05 Nec Corp Reticle cleaning device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04298747A (en) * 1991-03-28 1992-10-22 Nec Corp Washing method for photomask
JP2012211951A (en) * 2011-03-30 2012-11-01 Shin Etsu Chem Co Ltd Method and device for cleaning photomask-related substrate
CN114798599A (en) * 2022-04-15 2022-07-29 深圳市华星光电半导体显示技术有限公司 Mask plate cleaning equipment and mask plate cleaning method

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