JPH05323580A - Cleanzing method for surface of chromium board - Google Patents
Cleanzing method for surface of chromium boardInfo
- Publication number
- JPH05323580A JPH05323580A JP14900692A JP14900692A JPH05323580A JP H05323580 A JPH05323580 A JP H05323580A JP 14900692 A JP14900692 A JP 14900692A JP 14900692 A JP14900692 A JP 14900692A JP H05323580 A JPH05323580 A JP H05323580A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chromium
- liquid film
- board
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 20
- 229910052804 chromium Inorganic materials 0.000 title claims description 37
- 239000011651 chromium Substances 0.000 title claims description 37
- 239000007788 liquid Substances 0.000 claims abstract description 56
- 239000003599 detergent Substances 0.000 claims abstract description 45
- 230000007935 neutral effect Effects 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 20
- -1 ester salt Chemical class 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 106
- 238000004140 cleaning Methods 0.000 claims description 27
- 235000014113 dietary fatty acids Nutrition 0.000 claims 1
- 229930195729 fatty acid Natural products 0.000 claims 1
- 239000000194 fatty acid Substances 0.000 claims 1
- 150000004665 fatty acids Chemical class 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 10
- 238000007254 oxidation reaction Methods 0.000 abstract description 10
- 238000005507 spraying Methods 0.000 abstract description 3
- 239000004094 surface-active agent Substances 0.000 abstract description 3
- 125000001931 aliphatic group Chemical group 0.000 abstract 1
- 150000005215 alkyl ethers Chemical class 0.000 abstract 1
- 150000001408 amides Chemical class 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 10
- 239000000428 dust Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 6
- 150000002367 halogens Chemical class 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000005201 scrubbing Methods 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- 239000003945 anionic surfactant Substances 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical class C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 241000274177 Juniperus sabina Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007824 aliphatic compounds Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はパ−ティクルにより表面
が汚染された、表面にクロムを有する平滑な基板表面の
洗浄方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a smooth substrate surface having chromium on the surface, the surface of which is contaminated by particles.
【0002】[0002]
【従来の技術】クロムスパッタ石英板、クロムスパッタ
シリコンウエハ等の表面にクロムを有する平滑な基板
は、半導体製造またはその関連する分野、例えば、フォ
トマスクの作製用基板等として使用されており、また、
ポリマ−被膜を表面に形成した後の基板と被膜の剥離性
が良好なことからペリクル膜の作製用基板としての使用
も提案されている(特開平2−134634号)。2. Description of the Related Art A smooth substrate having chromium on its surface, such as a chromium sputtered quartz plate or a chromium sputtered silicon wafer, is used in the field of semiconductor manufacturing or its related fields, for example, as a substrate for producing a photomask, and the like. ,
Use of the pellicle film as a substrate for producing a pellicle film has been proposed because of its excellent releasability between the film and the substrate after the polymer film is formed on the surface (JP-A-2-134634).
【0003】これらの使用の際には、微細加工用途に使
用される場合が多いため、基板表面の高度な清浄度が要
求されるので、基板表面にパ−ティクル付着がないこと
または少ないことが必要である。Since these are often used for microfabrication purposes, a high degree of cleanliness of the substrate surface is required, so that there is little or no particle adhesion on the substrate surface. is necessary.
【0004】これまで、パ−ティクルにより汚染された
基板表面の清浄化のためには基板の洗浄を実施してき
た。その際の洗浄方法は、硫酸と過酸化水素による薬液
洗浄、純水中にて800〜1000kHz程度の超音波
の照射を行なう超音波洗浄を含む方法が一般的である。Up to now, the cleaning of the substrate has been carried out in order to clean the surface of the substrate contaminated by the particles. The cleaning method at that time is generally a method including chemical cleaning with sulfuric acid and hydrogen peroxide, and ultrasonic cleaning with irradiation of ultrasonic waves of about 800 to 1000 kHz in pure water.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、従来の
洗浄方法では基板の洗浄の際、クロム表面が酸化され、
表面の酸化物量が変化してしまうため、洗浄の有無によ
りレジストの塗布膜厚が変化したり、また、ペリクル膜
の作製用基板においても被膜膜厚の変化、基板と膜の剥
離性が低下することにより膜面キズ発生の増加、膜の伸
び、たるみ不良が増加するという問題があった。However, in the conventional cleaning method, the chromium surface is oxidized during the cleaning of the substrate,
Since the amount of oxide on the surface changes, the coating thickness of the resist changes depending on the presence or absence of cleaning, and the film thickness of the substrate for producing the pellicle film also changes and the peelability between the substrate and the film decreases. As a result, there are problems in that scratches on the film surface increase, film elongation and sagging defects increase.
【0006】本発明は以上の問題点に鑑みてなされたも
のであり、その目的は、表面にクロムを有する平滑な基
板を、クロムの酸化なしに表面に付着したパ−ティクル
を除去する洗浄方法を提供することにある。The present invention has been made in view of the above problems, and an object thereof is a cleaning method for removing particles adhering to a surface of a smooth substrate having chromium on its surface without oxidation of chromium. To provide.
【0007】[0007]
【課題を解決するための手段】本発明者は上記課題を解
決するために、表面にクロムを有する平滑な基板の洗浄
方法について種々の検討を行なった。その結果、クロム
基板表面に予め中性洗剤液の液膜を形成し、その液膜を
介して、スポンジで基板表面をこすることによりクロム
の酸化なしにパ−ティクルが除去可能なことを見出し、
本発明を完成するに至ったものである。すなわち、本発
明は表面にクロムを有する平滑な基板の表面に予め中性
洗剤液の液膜を形成し、その液膜を介して、スポンジで
基板表面をこすることにより、クロムの酸化なしにパ−
ティクルを除去することを特徴とするクロム基板表面の
洗浄方法である。In order to solve the above problems, the present inventor has conducted various studies on a method for cleaning a smooth substrate having chromium on its surface. As a result, it was found that particles can be removed without oxidation of chromium by forming a liquid film of a neutral detergent solution on the surface of the chromium substrate in advance and rubbing the surface of the substrate with a sponge through the liquid film. ,
The present invention has been completed. That is, the present invention forms a liquid film of a neutral detergent solution in advance on the surface of a smooth substrate having chromium on the surface, and rubs the substrate surface with a sponge through the liquid film to prevent chromium oxidation. Par
This is a method for cleaning the surface of a chromium substrate, which is characterized by removing the tickle.
【0008】以下、本発明についてさらに詳細に説明す
る。The present invention will be described in more detail below.
【0009】本発明の洗浄方法は、予めクロム基板表面
に中性洗剤液の液膜を形成し、その液膜を介して、スポ
ンジで基板表面をこするものである。According to the cleaning method of the present invention, a liquid film of a neutral detergent liquid is previously formed on the surface of a chromium substrate, and the surface of the substrate is rubbed with a sponge through the liquid film.
【0010】中性洗剤液を使用しても、液膜が形成して
いないために液膜を介さずにこすった場合、基板表面の
パ−ティクルは除去されず、かえってより強固に基板表
面に付着してしまう。洗剤液はフィルタ−により液中の
パ−ティクルを除去し使用する。また、基板を洗剤液中
においてこする方法では液からの再汚染が生じるため好
ましくない。Even if the neutral detergent liquid is used, if the liquid film is not formed and the surface is rubbed without passing through the liquid film, the particles on the surface of the substrate are not removed, and the surface of the substrate is more firmly fixed. It will stick. The detergent liquid is used after removing the particles in the liquid with a filter. Further, the method of rubbing the substrate in the detergent liquid is not preferable because recontamination from the liquid occurs.
【0011】ここに、クロム基板表面に中性洗剤液の液
膜が形成しているとは、クロム基板表面全面がその上に
供給された中性洗剤液により覆われている状態をいう。Here, the fact that the liquid film of the neutral detergent solution is formed on the surface of the chromium substrate means that the entire surface of the chromium substrate is covered with the neutral detergent solution supplied thereon.
【0012】クロム基板表面に中性洗剤液の液膜を形成
する方法としては、スピンコーター等の装置により基板
を回転させ、基板中央より洗剤液を供給する方法、固定
した基板にシャワーにて洗剤液を全面に均一に吹き付け
続ける方法等があげられる。なお、こすっている間に基
板表面に常に液膜を存在させるためには、スピンコ−タ
−と同様の装置により基板を回転させ、基板中央より常
に洗剤液を供給するとよい。As a method of forming a liquid film of the neutral detergent solution on the surface of the chromium substrate, the substrate is rotated by a device such as a spin coater and the detergent solution is supplied from the center of the substrate, or the detergent is fixed on the substrate by a shower. Examples include a method of continuously spraying the liquid onto the entire surface. In order to make the liquid film always exist on the surface of the substrate during rubbing, it is preferable that the substrate is rotated by the same device as the spin coater and the detergent liquid is constantly supplied from the center of the substrate.
【0013】本発明における洗剤液の液性は、クロム表
面の酸化防止のためにpH6.0〜8.0の範囲の中性
であれば特に限定するものではないが、さらに、基板を
液中に長時間浸漬した場合における酸化を完全になくす
ためにpH6.8〜7.2の範囲内であることが好まし
い。また、洗剤液における洗剤の濃度はクロム表面基板
上に液膜が形成可能であれば特に限定するものではない
が、洗浄後のすすぎ時の除去しやすさ等のため、0.1
〜5%が好ましい。The detergent liquid used in the present invention is not particularly limited as long as it is neutral in the pH range of 6.0 to 8.0 in order to prevent oxidation of the chromium surface. It is preferable that the pH is within the range of 6.8 to 7.2 in order to completely eliminate the oxidation in the case of immersing in water for a long time. The concentration of the detergent in the detergent liquid is not particularly limited as long as a liquid film can be formed on the chromium surface substrate, but is 0.1% or less for ease of removal during rinsing after washing.
-5% is preferable.
【0014】洗剤に使用できる界面活性剤としては、上
記した液性が得られ、しかもクロム基板上に液膜を形成
できるならば特に限定するものではなく、例えば、アル
キルフェノールエチレンオキサイド付加物,脂肪族アル
カノールアミド等の非イオン系界面活性剤、アルキルエ
ーテル硫酸エステル塩,アルキルベンゼンスルホン酸塩
等のアニオン系界面活性剤、第4級アンモニウム塩等の
カチオン系界面活性剤、アミノ酸型両性,ベダイン酸型
両性等の両性界面活性剤又はこれらの混合物等があげら
れるが、これらのうち、基板上での液膜形成の容易性の
ために、非イオン系界面活性剤、アニオン系界面活性剤
又はこれら2種の混合物の使用が好ましく、さらに、洗
浄後のすすぎ時の除去の容易性のため、アルキルエーテ
ル硫酸エステル塩と脂肪酸アルカノ−ルアミドの混合使
用が好ましい。The surfactant that can be used in the detergent is not particularly limited as long as it has the above-mentioned liquidity and can form a liquid film on the chromium substrate, and examples thereof include alkylphenol ethylene oxide adducts and aliphatic compounds. Nonionic surfactants such as alkanolamides, anionic surfactants such as alkyl ether sulfate ester salts and alkylbenzene sulfonates, cationic surfactants such as quaternary ammonium salts, amino acid amphoteric amphoteric and bedaiic acid amphoteric amphoteric Examples thereof include amphoteric surfactants such as and the like, or a mixture thereof. Among these, nonionic surfactants, anionic surfactants, or two of these are used for the ease of forming a liquid film on a substrate. It is preferable to use the alkyl ether sulfate ester salt because of its ease of removal during rinsing after washing. Fatty alkanol - mixed use of Ruamido is preferred.
【0015】本発明の洗浄に用いるスクラブ材としては
スポンジであれば特に限定するものではないが、洗浄中
のスクラブ材からの発塵を少量に抑えるため、特にクリ
−ンル−ム用途のものを使用することが好ましい。スク
ラブ材にクロス、ブラシを使用した場合、洗剤液膜を介
さずにこすられる部分が発生しパ−ティクル除去不良が
起こりやすい。The scrubbing material used in the cleaning of the present invention is not particularly limited as long as it is a sponge, but in order to suppress dust generation from the scrubbing material during cleaning to a small amount, a scrubbing material particularly used for a clean room is preferable. Preference is given to using. When a cloth or a brush is used as the scrubbing material, some portions are rubbed without passing through the detergent liquid film, and defective particle removal is likely to occur.
【0016】本発明の洗浄においては、中性洗剤液の液
面を介してこすらなけばならない。こすらないで、洗剤
液への浸漬、表面への洗剤液の吹き付け等のみでは、十
分にパ−ティクルは除去できない。また、超音波洗浄、
高圧ジェット洗浄を実施する場合、パ−ティクルの除去
は可能だが、クロム表面の酸化を伴うため好ましくな
い。In the cleaning of the present invention, it is necessary to rub through the surface of the neutral detergent solution. The particles cannot be sufficiently removed only by immersing in the detergent solution and spraying the detergent solution onto the surface without rubbing. Also, ultrasonic cleaning,
Particles can be removed when high-pressure jet cleaning is performed, but this is not preferable because oxidation of the chromium surface is involved.
【0017】[0017]
【実施例】以下、実施例により本発明をさらに詳細に説
明するが、本発明はこれら実施例にのみ限定されるもの
ではない。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
【0018】実施例1 クロムを0.07μの厚みでスパッタリングした直径7
インチの石英ガラス基板をクリ−ンル−ム外に放置しそ
の表面に多数の塵埃を付着させた。次にクラス100の
クリ−ンル−ム内にて、基板をスピンコ−タ−にセット
し200rpmで回転させ、中性洗剤(花王製 商品
名:ファミリ−フレッシュ)の1%水溶液を0.2μの
フィルタ−にて濾過した後、流量50ml/minにて
基板中央に滴下し基板表面全面に洗剤液の液膜が形成さ
れた後、超純水にて湿らせたクリ−ンル−ム用スポンジ
(カネボウ製 商品名:ベルクリン)を、基板中央に載
せ、基板中央から外周へ向かう移動の繰り返しにより3
分間こすった。その後、スポンジを基板上より除去しこ
するのをやめ、回転中の基板上に洗剤の滴下のみを1分
間行ない、引き続き流量50ml/minにて超純水を
基板中央に3分間滴下した後、乾燥した。Example 1 Diameter 7 sputtered with chromium to a thickness of 0.07μ
The inch quartz glass substrate was left outside the clean room and a large amount of dust adhered to the surface. Next, in a clean room of Class 100, the substrate was set on a spin coater and rotated at 200 rpm, and 0.2% of a 1% aqueous solution of a neutral detergent (Kao's trade name: Family Fresh) was added. After filtering with a filter, a liquid film of the detergent liquid was formed at the center of the substrate at a flow rate of 50 ml / min and a liquid film of the detergent liquid was formed on the entire surface of the substrate. Place Kanebo's product name: BERKLIN) on the center of the board, and repeat the movement from the board center to the outer circumference.
I rubbed for a minute. After that, the removal of the sponge from the substrate was stopped, the detergent was only dropped on the rotating substrate for 1 minute, and then ultrapure water was dropped at the center of the substrate for 3 minutes at a flow rate of 50 ml / min. Dried.
【0019】この処理を実施した基板20枚をハロゲン
ランプ照射下で検査を実施した結果、1枚の表面上に確
認されたパ−ティクル個数の平均は0.2個であった。
また、同基板1枚についてオ−ジェ電子分光分析を実施
し、基板表面から深さ80オングストロ−ムまでを分析
し、10オングストロ−ム間隔にて酸素ピ−クとクロム
ピ−クの強度比を求めた。この値は同様の分析により求
めた洗浄処理を実施しなかった基板と各深さにおいて同
じであった。As a result of inspecting 20 substrates subjected to this treatment under irradiation of a halogen lamp, the average number of particles confirmed on one surface was 0.2.
Also, the same substrate was subjected to Auger electron spectroscopy analysis to analyze the depth from the substrate surface to a depth of 80 Å, and the intensity ratio of oxygen peak and chrome peak was measured at intervals of 10 Å. I asked. This value was the same at each depth as the substrate not subjected to the cleaning treatment, which was obtained by the same analysis.
【0020】実施例2 クロムを0.07μの厚みでスパッタリングした直径7
インチの石英ガラス基板をクリ−ンル−ム外に放置しそ
の表面に多数の塵埃を付着させた。次にクラス100の
クリ−ンル−ム内にて、基板をスピンコ−タ−にセット
し200rpmで回転させ、非イオン系洗剤(日光ケミ
カルズ製 商品名:NIKKOL NP−10)の1%
水溶液を0.2μのフィルタ−にて濾過した後、流量5
0ml/minにて基板中央に滴下し基板表面全面に洗
剤液の液膜が形成された後、超純水にて湿らせたクリ−
ンル−ム用スポンジ(カネボウ製 商品名:ベルクリ
ン)を、基板中央に載せ、基板中央から外周へ向かう移
動の繰り返しにより3分間こすった。その後、スポンジ
を基板上より除去しこするのをやめ、回転中の基板上に
洗剤の滴下のみを1分間行ない、引き続き流量50ml
/minにて超純水を基板中央に3分間滴下した後、乾
燥した。Example 2 Diameter 7 sputtered with chromium to a thickness of 0.07μ
The inch quartz glass substrate was left outside the clean room and a large amount of dust adhered to the surface. Next, in a class 100 clean room, the substrate was set on a spin coater and rotated at 200 rpm, and 1% of a nonionic detergent (Nikko Chemicals trade name: NIKKOL NP-10) was used.
After filtering the aqueous solution with a 0.2 μ filter, the flow rate is 5
A liquid film of the detergent liquid was dropped onto the substrate surface at 0 ml / min to form a liquid film on the entire surface of the substrate.
A room sponge (Kanebo's trade name: Bellclin) was placed on the center of the substrate and rubbed for 3 minutes by repeating the movement from the center of the substrate to the outer periphery. After that, stop removing the sponge from the substrate and only drop the detergent on the rotating substrate for 1 minute.
After adding ultrapure water to the center of the substrate for 3 minutes at a speed of / min, the substrate was dried.
【0021】この処理を実施した基板20枚をハロゲン
ランプ照射下で検査を実施した結果、1枚の表面上に確
認されたパ−ティクル個数の平均は0.3個であった。
また、同基板1枚についてオ−ジェ電子分光分析を実施
し、基板表面から深さ80オングストロ−ムまでを分析
し、10オングストロ−ム間隔にて酸素ピ−クとクロム
ピ−クの強度比を求めた。この値は同様の分析により求
めた洗浄処理を実施しなかった基板と各深さにおいて同
じであった。As a result of inspecting 20 substrates subjected to this treatment under irradiation with a halogen lamp, the average number of particles confirmed on one surface was 0.3.
Also, the same substrate was subjected to Auger electron spectroscopy analysis to analyze the depth from the substrate surface to a depth of 80 Å, and the intensity ratio of oxygen peak and chrome peak was measured at intervals of 10 Å. I asked. This value was the same at each depth as the substrate not subjected to the cleaning treatment, which was obtained by the same analysis.
【0022】比較例1 クロムを0.07μの厚みでスパッタリングした直径7
インチの石英ガラス基板をクリ−ンル−ム外に放置しそ
の表面に多数の塵埃を付着させた。次にクラス100の
クリ−ンル−ム内にて、基板をスピンコ−タ−にセット
し200rpmで回転させ、中性洗剤(花王製 商品
名:ファミリ−フレッシュ)の1%水溶液を0.2μの
フィルタ−にて濾過した後、流量200ml/minに
て基板中央に10分間流下し続けた。回転と滴下を停止
し、基板を取り外し超純水のオ−バ−フロ−槽に3分間
浸漬した。浸漬後、基板表面に水滴が残らないように槽
から引き上げ、乾燥した。Comparative Example 1 Diameter 7 sputtered with chromium to a thickness of 0.07μ
The inch quartz glass substrate was left outside the clean room and a large amount of dust adhered to the surface. Next, in a clean room of Class 100, the substrate was set on a spin coater and rotated at 200 rpm, and 0.2% of a 1% aqueous solution of a neutral detergent (Kao's trade name: Family Fresh) was added. After filtering with a filter, it was continued to flow down to the center of the substrate for 10 minutes at a flow rate of 200 ml / min. The rotation and the dropping were stopped, the substrate was removed, and the substrate was immersed in an ultrapure overflow tank for 3 minutes. After the immersion, the substrate surface was pulled up and dried so that no water droplets remained on the substrate surface.
【0023】この処理を実施した基板20枚をハロゲン
ランプ照射下で検査を実施したところ20枚とも表面に
100個以上のパ−ティクルが確認された。When 20 substrates subjected to this treatment were inspected under irradiation of a halogen lamp, 100 or more particles were confirmed on the surface of each of the 20 substrates.
【0024】比較例2 クロムを0.07μの厚みでスパッタリングした直径7
インチの石英ガラス基板をクリ−ンル−ム外に放置しそ
の表面に多数の塵埃を付着させた。次にクラス100の
クリ−ンル−ム内にて、基板をスピンコ−タ−にセット
し、回転させない状態で中性洗剤(花王製 商品名:フ
ァミリ−フレッシュ)の1%水溶液を0.2μのフィル
タ−にて濾過した後、流量50ml/minにて基板中
央に滴下したところ、基板表面が洗剤液をはじき、液膜
にて覆われた部分と覆われない部分が発生した。この状
態において、超純水にて湿らせたクリ−ンル−ム用スポ
ンジ(カネボウ製 商品名:ベルクリン)を、基板中央
に載せ、基板中央から外周へ向かう移動の繰り返しによ
り3分間こすった。その後、スポンジを基板上より除去
しこするのをやめた後、基板を200rpmで回転さ
せ、回転中の基板上に洗剤の滴下のみを1分間行ない、
引き続き流量50ml/minにて超純水を基板中央に
3分間滴下した後、乾燥した。Comparative Example 2 Chromium sputtered to a thickness of 0.07μ has a diameter of 7
The inch quartz glass substrate was left outside the clean room and a large amount of dust adhered to the surface. Next, in a clean room of Class 100, the substrate was set on a spin coater, and a 1% aqueous solution of a neutral detergent (Kao's trade name: Family Fresh) of 0.2 μ was placed on the spin coater without rotation. After filtering with a filter, the solution was dropped onto the center of the substrate at a flow rate of 50 ml / min. The substrate surface repelled the detergent liquid, and some portions were covered with the liquid film and some were not. In this state, a clean room sponge moistened with ultrapure water (Kanebo's trade name: Bellclin) was placed on the center of the substrate and rubbed for 3 minutes by repeating the movement from the center of the substrate to the outer periphery. Then, after stopping removing the sponge from the substrate, the substrate is rotated at 200 rpm and only the detergent is dropped on the rotating substrate for 1 minute.
Subsequently, ultrapure water was dropped at the center of the substrate for 3 minutes at a flow rate of 50 ml / min, and then dried.
【0025】この処理を実施した基板20枚をハロゲン
ランプ照射下で検査を実施したところ、20枚全数にお
いて表面上に無数のパーティクルが確認された。When 20 substrates subjected to this treatment were inspected under irradiation of a halogen lamp, innumerable particles were confirmed on the surface of all 20 substrates.
【0026】比較例3 クロムを0.07μの厚みでスパッタリングした直径7
インチの石英ガラス基板をクリ−ンル−ム外に放置しそ
の表面に多数の塵埃を付着させた。次にクラス100の
クリ−ンル−ム内にて、基板をスピンコ−タ−にセット
し200rpmで回転させ、中性洗剤(花王製 商品
名:ファミリ−フレッシュ)の1%水溶液を0.2μの
フィルタ−にて濾過した後、流量50ml/minにて
基板中央に滴下し基板表面全面に洗剤液の液膜が形成さ
れた後、超純水にて湿らせたクリ−ンル−ム用クロス
(カネボウ製 商品名:ザビーナミニマックス)を、基
板中央に載せ、基板中央から外周へ向かう移動の繰り返
しにより3分間こすった。その後、クロスを基板上より
除去しこするのをやめ、回転中の基板上に洗剤の滴下の
みを1分間行ない、引き続き流量50ml/minにて
超純水を基板中央に3分間滴下した後、乾燥した。Comparative Example 3 Diameter 7 sputtered with chromium to a thickness of 0.07μ
The inch quartz glass substrate was left outside the clean room and a large amount of dust adhered to the surface. Next, in a clean room of Class 100, the substrate was set on a spin coater and rotated at 200 rpm, and 0.2% of a 1% aqueous solution of a neutral detergent (Kao's trade name: Family Fresh) was added. After filtering with a filter, a liquid film of the detergent liquid was dropped onto the center of the substrate at a flow rate of 50 ml / min to form a liquid film of the detergent liquid on the entire surface of the substrate, and then the cleaning cloth for clean room (wet with ultrapure water) ( Kanebo's product name: Sabina Minimax) was placed on the center of the substrate and rubbed for 3 minutes by repeating the movement from the center of the substrate to the outer periphery. Then, stop removing the cloth from the substrate, drop the detergent only on the rotating substrate for 1 minute, and then continuously drop ultrapure water on the substrate center for 3 minutes at a flow rate of 50 ml / min. Dried.
【0027】この処理を実施した基板20枚をハロゲン
ランプ照射下で検査を実施したところ、20枚全数にお
いて表面上に無数のパーティクルが確認された。When 20 substrates subjected to this treatment were inspected under irradiation with a halogen lamp, innumerable particles were confirmed on the surface of all 20 substrates.
【0028】比較例4 クロムを0.07μの厚みでスパッタリングした直径7
インチの石英ガラス基板をクリ−ンル−ム外に放置しそ
の表面に多数の塵埃を付着させた。次にクラス100の
クリ−ンル−ム内にて、基板を80℃に加熱された硫
酸、過酸化水素水溶液による洗浄槽に3分間浸漬した
後、純水の急速給排水洗浄槽、50℃の温純水のオーバ
ーフロー槽、純水超音波洗浄槽に順に浸漬した後、乾燥
した。Comparative Example 4 Diameter 7 sputtered with chromium to a thickness of 0.07μ
The inch quartz glass substrate was left outside the clean room and a large amount of dust adhered to the surface. Next, in a clean room of Class 100, the substrate was immersed in a cleaning bath of sulfuric acid / hydrogen peroxide solution heated to 80 ° C. for 3 minutes, and then a pure water rapid supply / drainage cleaning bath and hot pure water of 50 ° C. The sample was immersed in the overflow tank and the pure water ultrasonic cleaning tank in this order, and then dried.
【0029】この処理を実施した基板20枚をハロゲン
ランプ照射下で検査を実施した結果、1枚の表面上に確
認されたパ−ティクル個数の平均は1.2個であった。As a result of inspecting 20 substrates subjected to this treatment under irradiation of a halogen lamp, the average number of particles confirmed on one surface was 1.2.
【0030】また、同基板1枚についてオ−ジェ電子分
光分析を実施し、基板表面から深さ80オングストロ−
ムまでを分析し、10オングストロ−ム間隔にて酸素ピ
−クとクロムピ−クの強度比を求めた。同様の分析によ
り求めた洗浄処理を実施しなかった基板の値と比較した
ところ、各深さにて酸素の割合の増加が認められた。Also, the same substrate was subjected to Auger electron spectroscopic analysis to obtain a depth of 80 angstroms from the substrate surface.
And the intensity ratio between the oxygen peak and the chrome peak was determined at intervals of 10 angstroms. When compared with the value of the substrate not subjected to the cleaning treatment, which was obtained by the same analysis, an increase in the proportion of oxygen was observed at each depth.
【0031】[0031]
【発明の効果】以上の説明から明らかなように、本発明
の方法によれば、表面にクロムを有する平滑な基板の表
面に予め中性洗剤液の液膜を形成し、その液膜を介し
て、スポンジにて基板表面をこすることにより、クロム
の酸化なしにパ−ティクルを除去することができるた
め、従来の洗浄方法における洗浄時のクロム表面の酸化
という問題を伴なうことなく、クロム基板表面を洗浄で
きるという効果を有するものである。As is clear from the above description, according to the method of the present invention, a liquid film of a neutral detergent liquid is formed in advance on the surface of a smooth substrate having chromium on the surface, and the liquid film is interposed through the liquid film. By rubbing the surface of the substrate with a sponge, the particles can be removed without oxidation of chromium, without the problem of oxidation of the chromium surface during cleaning in the conventional cleaning method. It has the effect of cleaning the surface of the chromium substrate.
Claims (3)
に予め中性洗剤液の液膜を形成し、その液膜を介して、
スポンジで基板表面をこすることにより、クロムの酸化
なしにパ−ティクルを除去することを特徴とするクロム
基板表面の洗浄方法。1. A liquid film of a neutral detergent liquid is previously formed on a surface of a smooth substrate having chromium on the surface, and the liquid film is formed through the liquid film.
A method for cleaning a surface of a chromium substrate, which comprises rubbing the surface of the substrate with a sponge to remove the particles without oxidizing the chromium.
範囲内であることを特徴とする請求項1記載のクロム基
板表面の洗浄方法。2. The method for cleaning a surface of a chromium substrate according to claim 1, wherein the pH of the neutral detergent solution is in the range of 6.0 to 8.0.
硫酸エステル塩と脂肪酸アルカノ−ルアミドを含むこと
を特徴とする請求項1記載のクロム基板表面の洗浄方
法。3. The method for cleaning a surface of a chromium substrate according to claim 1, wherein the neutral detergent liquid component contains an alkyl ether sulfate ester salt and a fatty acid alkanolamide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14900692A JPH05323580A (en) | 1992-05-18 | 1992-05-18 | Cleanzing method for surface of chromium board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14900692A JPH05323580A (en) | 1992-05-18 | 1992-05-18 | Cleanzing method for surface of chromium board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05323580A true JPH05323580A (en) | 1993-12-07 |
Family
ID=15465611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14900692A Pending JPH05323580A (en) | 1992-05-18 | 1992-05-18 | Cleanzing method for surface of chromium board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05323580A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1983003835A1 (en) * | 1982-04-30 | 1983-11-10 | Esdan Extrusion Pty. Limited | Resin composition |
US6277203B1 (en) | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
-
1992
- 1992-05-18 JP JP14900692A patent/JPH05323580A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1983003835A1 (en) * | 1982-04-30 | 1983-11-10 | Esdan Extrusion Pty. Limited | Resin composition |
US6277203B1 (en) | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
US6319330B1 (en) | 1998-09-29 | 2001-11-20 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
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