JPS5522833A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5522833A
JPS5522833A JP9533478A JP9533478A JPS5522833A JP S5522833 A JPS5522833 A JP S5522833A JP 9533478 A JP9533478 A JP 9533478A JP 9533478 A JP9533478 A JP 9533478A JP S5522833 A JPS5522833 A JP S5522833A
Authority
JP
Japan
Prior art keywords
pattern
photoregist
film
adhesion
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9533478A
Other languages
Japanese (ja)
Other versions
JPS6366049B2 (en
Inventor
Kazuya Kikuchi
Tadanaka Yoneda
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9533478A priority Critical patent/JPS5522833A/en
Publication of JPS5522833A publication Critical patent/JPS5522833A/en
Publication of JPS6366049B2 publication Critical patent/JPS6366049B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the mask suitable to the formation of the fine pattern by forming the photoregist pattern on the semiconductor substrate, hardening the surface thereof by use of gas plasma and intensifying the degree of adhesion through the heat treatment.
CONSTITUTION: On a semiconductor substrate 21 coated is an Al film 22, on which a photoregist pattern 23 is formed. The degree of adhesion between the pattern 23' and the film 22 is increased through the heat treatment carried out in gas plasma of N2 or CF4 for 10 minutes. Then, the film 22 is etched off by use of etching solution consisted of phosphoric acid. After that, the pattern 23' is removed to leave an Al pattern 24. By doing so, any pattern distrotion is not caused on the photoregist pattern 23', and the desired width of Al pattern can be obtained, thus effecting an improvement in process yield.
COPYRIGHT: (C)1980,JPO&Japio
JP9533478A 1978-08-03 1978-08-03 Manufacturing of semiconductor device Granted JPS5522833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9533478A JPS5522833A (en) 1978-08-03 1978-08-03 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9533478A JPS5522833A (en) 1978-08-03 1978-08-03 Manufacturing of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5522833A true JPS5522833A (en) 1980-02-18
JPS6366049B2 JPS6366049B2 (en) 1988-12-19

Family

ID=14134807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9533478A Granted JPS5522833A (en) 1978-08-03 1978-08-03 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5522833A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884430A (en) * 1981-11-14 1983-05-20 Daikin Ind Ltd Method of increasing etching resistance of resist film
JPS63232330A (en) * 1987-03-20 1988-09-28 Ushio Inc Treatment of resist

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110374A (en) * 1977-03-08 1978-09-27 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110374A (en) * 1977-03-08 1978-09-27 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884430A (en) * 1981-11-14 1983-05-20 Daikin Ind Ltd Method of increasing etching resistance of resist film
JPS63232330A (en) * 1987-03-20 1988-09-28 Ushio Inc Treatment of resist

Also Published As

Publication number Publication date
JPS6366049B2 (en) 1988-12-19

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