GB1163463A - A Process for the Production of Metal Coating Connections in a Semiconductor System - Google Patents

A Process for the Production of Metal Coating Connections in a Semiconductor System

Info

Publication number
GB1163463A
GB1163463A GB3920767A GB3920767A GB1163463A GB 1163463 A GB1163463 A GB 1163463A GB 3920767 A GB3920767 A GB 3920767A GB 3920767 A GB3920767 A GB 3920767A GB 1163463 A GB1163463 A GB 1163463A
Authority
GB
United Kingdom
Prior art keywords
photo
coating
annealing
buffered
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3920767A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of GB1163463A publication Critical patent/GB1163463A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

1,163,463. Semi-conductor devices. ROBERT BOSCH G.m.b.H. 25 Aug., 1967 [26 Aug., 1966], No. 39207/67. Heading H1K. [Also in Division C7] A coating of Ni in a specific pattern is formed on a semi-conductor of Si in a process comprising applying a photo-resist to the specific pattern on the oxide coated Si surface, etching away the exposed areas of oxide coating, removing the resist, vapour depositing Ni, annealing to form a coating of nickel silicide and removing the Ni deposited on the unetched portions by dissolution in an acid such as HNO 3 or a mixture of HCl or H 2 O 2 As shown in Fig. 1 a photo-lacquer layer 3 was applied to a Si disc 1 having a SiO 2 layer 2. A photo-mask 4 was applied and the disc exposed to ultra-violet light and then treated in a photographic developer. Etching with aqueous HF buffered with NH 4 F was then carried out and the remaining photo-lacquer was dissolved in H 2 SO 4 or an organic solvent. After vapour deposition of Ni under vacuum, annealing is effected at over 600‹ C. followed by dissolution of the remaining Ni. The annealed coating is etched in aqueous HF buffered with NH 4 F and Ni electrodes are deposited from a solution of NiCl 2 and NaH 2 PO 2 .
GB3920767A 1966-08-26 1967-08-25 A Process for the Production of Metal Coating Connections in a Semiconductor System Expired GB1163463A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1966B0088629 DE1286641B (en) 1966-08-26 1966-08-26 Method for contacting a semiconductor arrangement

Publications (1)

Publication Number Publication Date
GB1163463A true GB1163463A (en) 1969-09-04

Family

ID=6984391

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3920767A Expired GB1163463A (en) 1966-08-26 1967-08-25 A Process for the Production of Metal Coating Connections in a Semiconductor System

Country Status (2)

Country Link
DE (1) DE1286641B (en)
GB (1) GB1163463A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0094711A1 (en) * 1982-05-14 1983-11-23 Koninklijke Philips Electronics N.V. Method of manufacturing finely structured metal patterns on metal or semiconductor surfaces

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965173A (en) * 1982-12-08 1990-10-23 International Rectifier Corporation Metallizing process and structure for semiconductor devices
SE8306663L (en) * 1982-12-08 1984-06-09 Int Rectifier Corp PROCEDURE FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT219662B (en) * 1959-09-16 1962-02-12 Philips Nv A method of manufacturing semiconductor devices having electrodes made of aluminum
NL269092A (en) * 1960-09-09 1900-01-01
DE1213921B (en) * 1964-08-25 1966-04-07 Bosch Gmbh Robert Method for manufacturing a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0094711A1 (en) * 1982-05-14 1983-11-23 Koninklijke Philips Electronics N.V. Method of manufacturing finely structured metal patterns on metal or semiconductor surfaces

Also Published As

Publication number Publication date
DE1286641B (en) 1969-01-09

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees