Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric CorpfiledCriticalMitsubishi Electric Corp
Priority to JP14472775ApriorityCriticalpatent/JPS5267985A/en
Publication of JPS5267985ApublicationCriticalpatent/JPS5267985A/en
PURPOSE: The insulation separation is given to circuit element which is formed on semiconductor substrate. In this case, Si substrate is etched into a prescribed depth using Si3N4 separation mask. SiO2 film is coated into concavity formed, and part of this removed to form SiO2 film again. In this way, projection occurrence is avoided on substrate surface.
COPYRIGHT: (C)1977,JPO&Japio
JP14472775A1975-12-041975-12-04Manufacturing process of semiconductor unit
PendingJPS5267985A
(en)