JPS57211781A - Patterning method of double stacking thin film - Google Patents
Patterning method of double stacking thin filmInfo
- Publication number
- JPS57211781A JPS57211781A JP9787881A JP9787881A JPS57211781A JP S57211781 A JPS57211781 A JP S57211781A JP 9787881 A JP9787881 A JP 9787881A JP 9787881 A JP9787881 A JP 9787881A JP S57211781 A JPS57211781 A JP S57211781A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- thin film
- silicon
- stacking thin
- double stacking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000000059 patterning Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To pattern with good accuracy a double stacking thin film of silicon and silicon nitride by utilizing two kinds of etching solution having a great difference between etching speed for a etching-oriented film and that for no etching-oriented film. CONSTITUTION:A double stacking thin film provided in order of silicon nitride 2 and amorphous silicon 6 on a glass insulating substrate 5 is firstly patterned by photoresist. After that, the silicon 6 is etched by etching solution mixed hydrofluoric nitric acid and acetic acid with a volume percent of 6:1:2. Next, the silicon nitride 2 is etched by solution diluted 48% hydrogen fluoride with water at 1:10 or over. After finishing patterning in this way, unnecessary resist is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9787881A JPS57211781A (en) | 1981-06-24 | 1981-06-24 | Patterning method of double stacking thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9787881A JPS57211781A (en) | 1981-06-24 | 1981-06-24 | Patterning method of double stacking thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57211781A true JPS57211781A (en) | 1982-12-25 |
| JPH0151052B2 JPH0151052B2 (en) | 1989-11-01 |
Family
ID=14204000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9787881A Granted JPS57211781A (en) | 1981-06-24 | 1981-06-24 | Patterning method of double stacking thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57211781A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62299035A (en) * | 1986-06-18 | 1987-12-26 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS63293981A (en) * | 1987-05-27 | 1988-11-30 | Hitachi Ltd | Manufacture of thin-film transistor |
| JPS6432635A (en) * | 1987-07-22 | 1989-02-02 | Alps Electric Co Ltd | Manufacture of thin-film element substrate |
-
1981
- 1981-06-24 JP JP9787881A patent/JPS57211781A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62299035A (en) * | 1986-06-18 | 1987-12-26 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS63293981A (en) * | 1987-05-27 | 1988-11-30 | Hitachi Ltd | Manufacture of thin-film transistor |
| JPS6432635A (en) * | 1987-07-22 | 1989-02-02 | Alps Electric Co Ltd | Manufacture of thin-film element substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0151052B2 (en) | 1989-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1445659A (en) | Method of etching silicon oxide to produce a tapered edge thereon | |
| JPS57211781A (en) | Patterning method of double stacking thin film | |
| JPS57204165A (en) | Manufacture of charge coupling element | |
| JPS5688320A (en) | Gas etching method | |
| JPS56142071A (en) | Ink jet nozzle plate | |
| JPS57130431A (en) | Manufacture of semiconductor device | |
| JPS5530826A (en) | Method of manufacturing semiconductor device | |
| JPS5742151A (en) | Formation of pattern | |
| JPS57124440A (en) | Compound etching method | |
| JPS5585674A (en) | Detecting method for etching end point | |
| JPS5339058A (en) | Production of semiconductor device | |
| JPS57166399A (en) | Preparation of quartz vibrator | |
| JPS56122143A (en) | Manufacture of semiconductor device | |
| JPS6430228A (en) | Manufacture of semiconductor device | |
| GB1504264A (en) | Etching of tantalum layers | |
| JPS54121684A (en) | Manufacture of semkconductor device | |
| JPS56111241A (en) | Preparation of semiconductor device | |
| JPS6439029A (en) | Manufacture of semiconductor device | |
| JPS5461475A (en) | Poly-film etching method | |
| JPS6449242A (en) | Manufacture of semiconductor device | |
| JPS54162490A (en) | Manufacture of semiconductor device | |
| JPS52135675A (en) | Anisotropic ethcing of semiconductor single crystal | |
| JPS6435917A (en) | Manufacture of semiconductor device | |
| JPS5575221A (en) | Manufacturing semiconductor | |
| JPS5643744A (en) | Manufacture of semiconductor device |