JPS5461475A - Poly-film etching method - Google Patents

Poly-film etching method

Info

Publication number
JPS5461475A
JPS5461475A JP12751777A JP12751777A JPS5461475A JP S5461475 A JPS5461475 A JP S5461475A JP 12751777 A JP12751777 A JP 12751777A JP 12751777 A JP12751777 A JP 12751777A JP S5461475 A JPS5461475 A JP S5461475A
Authority
JP
Japan
Prior art keywords
substrate
poly
etching method
photo resist
resist mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12751777A
Other languages
Japanese (ja)
Inventor
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12751777A priority Critical patent/JPS5461475A/en
Publication of JPS5461475A publication Critical patent/JPS5461475A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To avoid overhand phenomenon, by making unnecessary the alignment work of mask through a plurality of etchings with the self-alignment method.
CONSTITUTION: The photo resist mask 16 having the open hole 16A on the substrate 10 is placed and silicon nitride film 14 is gas-etched. The PSG film 12b is also selectively etched with the pattern of the opening 16A. When the substrate 10 is placed in the baking furnace and the photo resist mask 16 is baked, new and conparably small opening 16B can be determined. Further, the silicon oxide film 12a is selectively etched and the etching hole 12A is formed
COPYRIGHT: (C)1979,JPO&Japio
JP12751777A 1977-10-26 1977-10-26 Poly-film etching method Pending JPS5461475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12751777A JPS5461475A (en) 1977-10-26 1977-10-26 Poly-film etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12751777A JPS5461475A (en) 1977-10-26 1977-10-26 Poly-film etching method

Publications (1)

Publication Number Publication Date
JPS5461475A true JPS5461475A (en) 1979-05-17

Family

ID=14961960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12751777A Pending JPS5461475A (en) 1977-10-26 1977-10-26 Poly-film etching method

Country Status (1)

Country Link
JP (1) JPS5461475A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577936A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of semiconductor device
JPS60246640A (en) * 1984-05-22 1985-12-06 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
CN112802747A (en) * 2021-03-26 2021-05-14 度亘激光技术（苏州）有限公司 Preparation method of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577936A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of semiconductor device
JPH0313744B2 (en) * 1980-06-18 1991-02-25 Fujitsu Ltd
JPS60246640A (en) * 1984-05-22 1985-12-06 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
CN112802747A (en) * 2021-03-26 2021-05-14 度亘激光技术（苏州）有限公司 Preparation method of semiconductor device
CN112802747B (en) * 2021-03-26 2021-07-16 度亘激光技术（苏州）有限公司 Preparation method of semiconductor device

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