JPS6428923A - Formation of taper-shaped trench - Google Patents
Formation of taper-shaped trenchInfo
- Publication number
- JPS6428923A JPS6428923A JP18605787A JP18605787A JPS6428923A JP S6428923 A JPS6428923 A JP S6428923A JP 18605787 A JP18605787 A JP 18605787A JP 18605787 A JP18605787 A JP 18605787A JP S6428923 A JPS6428923 A JP S6428923A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- silicon substrate
- trench
- polysilicon film
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the sufficient breakdown strength of an insulating film by a method wherein a mask is formed on the surface of a silicon substrate and a trench is formed in the silicon substrate by a dry itching operation by making use of a trench etching mask formed on sidewalls of a window of the mask as a mask. CONSTITUTION:A 1mum PSG film 4 whose selective ratio to a silicon substrate 1 is large is formed on the surface of the silicon substrate 1 ; a window is opened in a desired position, and a mask is formed. Then, a natural oxide film on a polysilicon film 5 is removed; after that, an etching operation is executed by an R.I.E. method by using bromine; the polysilicon film 5 is removed; the polysilicon film 5 is left at sidewalls of the window. The silicon substrate 1 is etched by the R.I.E. method by using bromine gas by making use of this polysilicon film 5 as a mask; a trench is formed. The trench formed in the silicon substrate by this etching operation is finally shaped like a taper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18605787A JPS6428923A (en) | 1987-07-24 | 1987-07-24 | Formation of taper-shaped trench |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18605787A JPS6428923A (en) | 1987-07-24 | 1987-07-24 | Formation of taper-shaped trench |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6428923A true JPS6428923A (en) | 1989-01-31 |
Family
ID=16181637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18605787A Pending JPS6428923A (en) | 1987-07-24 | 1987-07-24 | Formation of taper-shaped trench |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428923A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0353521A (en) * | 1989-07-21 | 1991-03-07 | Nec Corp | Manufacture of semiconductor device |
| US5356823A (en) * | 1989-12-22 | 1994-10-18 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
| JP2013250290A (en) * | 2012-05-30 | 2013-12-12 | Nikon Corp | Rear converter lens, optical device, and method for manufacturing rear converter lens |
-
1987
- 1987-07-24 JP JP18605787A patent/JPS6428923A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0353521A (en) * | 1989-07-21 | 1991-03-07 | Nec Corp | Manufacture of semiconductor device |
| US5356823A (en) * | 1989-12-22 | 1994-10-18 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
| JP2013250290A (en) * | 2012-05-30 | 2013-12-12 | Nikon Corp | Rear converter lens, optical device, and method for manufacturing rear converter lens |
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