JPS5676571A - Mos field effect transistor and manufacture thereof - Google Patents

Mos field effect transistor and manufacture thereof

Info

Publication number
JPS5676571A
JPS5676571A JP15476879A JP15476879A JPS5676571A JP S5676571 A JPS5676571 A JP S5676571A JP 15476879 A JP15476879 A JP 15476879A JP 15476879 A JP15476879 A JP 15476879A JP S5676571 A JPS5676571 A JP S5676571A
Authority
JP
Japan
Prior art keywords
gaas
alxga1
xas
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15476879A
Other languages
Japanese (ja)
Inventor
Hideki Hayashi
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15476879A priority Critical patent/JPS5676571A/en
Publication of JPS5676571A publication Critical patent/JPS5676571A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To prevent the short channel effect in an MOS field effect transistor by forming an extremely short channel using an oblique etching of AlxGa1-xAs and longitudinally etching the GaAs in the channel part. CONSTITUTION:N<+> type AlxGa1-xAs26 (0<x<1) is epitaxially grown on the N type GaAs epitaxial layer 25 on a P type GaAs substrate or semi-insulating substrate, and the layer 26 is obliquely etched through a photoresist pattern 27 using selective and anisotropic etchant. Then, with AlxGa1-xAs as a mask the GaAs is etched using the selective etchant of the GaAs. Then an insulating layer 28 is formed on the surface of the GaAs and AlxGa1-xAs, a gate electrode 29 is formed on the insulating layer, and further the source electrode 30 and drain electrode 31 are formed thereon.
JP15476879A 1979-11-28 1979-11-28 Mos field effect transistor and manufacture thereof Pending JPS5676571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15476879A JPS5676571A (en) 1979-11-28 1979-11-28 Mos field effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15476879A JPS5676571A (en) 1979-11-28 1979-11-28 Mos field effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5676571A true JPS5676571A (en) 1981-06-24

Family

ID=15591463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15476879A Pending JPS5676571A (en) 1979-11-28 1979-11-28 Mos field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5676571A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824804A (en) * 1986-08-15 1989-04-25 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making vertical enhancement-mode group III-V compound MISFETS
US4939100A (en) * 1987-12-18 1990-07-03 Commissariat A L'energie Atomique Process for the production of a MIS transistor with a raised substrate/gate dielectric interface end
US4987095A (en) * 1988-06-15 1991-01-22 International Business Machines Corp. Method of making unpinned oxide-compound semiconductor structures
US5652451A (en) * 1994-09-05 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Recessed gate field effect transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508483A (en) * 1973-05-21 1975-01-28
JPS5376771A (en) * 1976-12-20 1978-07-07 Toshiaki Ikoma Insulated gate type field effect transistor
JPS53111283A (en) * 1977-03-09 1978-09-28 Matsushita Electric Ind Co Ltd Compound semiconductor device and production of the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508483A (en) * 1973-05-21 1975-01-28
JPS5376771A (en) * 1976-12-20 1978-07-07 Toshiaki Ikoma Insulated gate type field effect transistor
JPS53111283A (en) * 1977-03-09 1978-09-28 Matsushita Electric Ind Co Ltd Compound semiconductor device and production of the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824804A (en) * 1986-08-15 1989-04-25 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making vertical enhancement-mode group III-V compound MISFETS
US4939100A (en) * 1987-12-18 1990-07-03 Commissariat A L'energie Atomique Process for the production of a MIS transistor with a raised substrate/gate dielectric interface end
US4987095A (en) * 1988-06-15 1991-01-22 International Business Machines Corp. Method of making unpinned oxide-compound semiconductor structures
US5652451A (en) * 1994-09-05 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Recessed gate field effect transistor

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