JPS57193068A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57193068A JPS57193068A JP7765681A JP7765681A JPS57193068A JP S57193068 A JPS57193068 A JP S57193068A JP 7765681 A JP7765681 A JP 7765681A JP 7765681 A JP7765681 A JP 7765681A JP S57193068 A JPS57193068 A JP S57193068A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- source
- forming
- approx
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Abstract
PURPOSE:To obtain source and drain electrodes having low resistance value even at a low temperature region of approx. 77 deg.K in a high electron mobility transistor having a channel layer of lower layer and an electron supplying layer of upper layer by forming only a gate electrode on the electron supplying layer and forming the source and drain electrodes through an output electrode region layer. CONSTITUTION:A non-doped GaAs channel layer 2, and an N type Al0.3Ga0.7 as electron supplying layer 3 of approx. 2X10<18>/cm<3> of impurity density are laminated on a semi-insulated GaAs substrate 1, are epitaxially grown, and an electron storage layer 5 is produced on the surface layer of the layer 3. Then, the overall surface is covered with an SiO2 film 4 having the prescribed pattern, the film 4 as a mask it is etched, thereby removing source and drain forming regions 6 intruded into the layer 2. Subsequently, a GaAs layer of approx. 1X10<9>/ cm<3> of density is grown, an output electrode region layer 7 is formed in the region 6, source and drain electrodes 8 are covered on the layer 7, a layer 7' produced at the time of forming the layer 7 is removed, and a gate electrode 9 is formed on the layer 4 disposed between the electrodes 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7765681A JPS57193068A (en) | 1981-05-22 | 1981-05-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7765681A JPS57193068A (en) | 1981-05-22 | 1981-05-22 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57193068A true JPS57193068A (en) | 1982-11-27 |
Family
ID=13639921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7765681A Pending JPS57193068A (en) | 1981-05-22 | 1981-05-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57193068A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012774A (en) * | 1983-07-02 | 1985-01-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor element |
| JPS60254669A (en) * | 1984-05-30 | 1985-12-16 | Nec Corp | Semiconductor device |
| JPS6197869A (en) * | 1984-10-18 | 1986-05-16 | Nec Corp | Field effect transistor |
| JPS61187373A (en) * | 1985-02-15 | 1986-08-21 | Nec Corp | Field effect transistor |
-
1981
- 1981-05-22 JP JP7765681A patent/JPS57193068A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012774A (en) * | 1983-07-02 | 1985-01-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor element |
| JPS60254669A (en) * | 1984-05-30 | 1985-12-16 | Nec Corp | Semiconductor device |
| JPS6197869A (en) * | 1984-10-18 | 1986-05-16 | Nec Corp | Field effect transistor |
| JPS61187373A (en) * | 1985-02-15 | 1986-08-21 | Nec Corp | Field effect transistor |
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