JPS574169A - Gaas field-effect transistor - Google Patents
Gaas field-effect transistorInfo
- Publication number
- JPS574169A JPS574169A JP7816680A JP7816680A JPS574169A JP S574169 A JPS574169 A JP S574169A JP 7816680 A JP7816680 A JP 7816680A JP 7816680 A JP7816680 A JP 7816680A JP S574169 A JPS574169 A JP S574169A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate electrode
- type
- added
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 108091006146 Channels Proteins 0.000 abstract 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To uniformalize characteristics by a method wherein a Cr added layer or a P type layer is formed in predetermined depth in an N type channel under a gate electrode without etching the surface of an N type operating layer of the GaAs FET, and used as an insulating layer. CONSTITUTION:An N<-> buffer layer 12 and an N layer 13 are formed on an insulating GaAs substrate 11 to which Cr is added in epitaxial shapes. The Cr ion injected layer 17 is made up in prescribed depth, the Al gate electrode 14 is built up on the surface and a Schottky barrier is formed between the N layer 13 and the gate electrode, and ohmic AuGe source electrode 15 and drain electrode 16 are attached at both sides. The FET, characteristics thereof are uniform and which is suitable for changing into an integrated circuit, is obtained because the width W of the channel can be controlled by injecting Cr ions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7816680A JPS574169A (en) | 1980-06-10 | 1980-06-10 | Gaas field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7816680A JPS574169A (en) | 1980-06-10 | 1980-06-10 | Gaas field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS574169A true JPS574169A (en) | 1982-01-09 |
Family
ID=13654340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7816680A Pending JPS574169A (en) | 1980-06-10 | 1980-06-10 | Gaas field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS574169A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5879772A (en) * | 1981-11-06 | 1983-05-13 | Sumitomo Electric Ind Ltd | Schottky gate field-effect transistor |
JPS61164415A (en) * | 1985-01-16 | 1986-07-25 | 古河電気工業株式会社 | Phase arrangement method of in-phase two strip flat laid power cable |
JPS61199667A (en) * | 1985-02-28 | 1986-09-04 | Oki Electric Ind Co Ltd | Gaas field-effect transistor |
EP0287811A1 (en) * | 1987-04-23 | 1988-10-26 | International Business Machines Corporation | Field effect transistor and method of making |
CN113451387A (en) * | 2020-03-24 | 2021-09-28 | 清华大学 | Buffer region variable doping structure for overvoltage breakdown function and semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5080086A (en) * | 1973-11-12 | 1975-06-28 |
-
1980
- 1980-06-10 JP JP7816680A patent/JPS574169A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5080086A (en) * | 1973-11-12 | 1975-06-28 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5879772A (en) * | 1981-11-06 | 1983-05-13 | Sumitomo Electric Ind Ltd | Schottky gate field-effect transistor |
JPS61164415A (en) * | 1985-01-16 | 1986-07-25 | 古河電気工業株式会社 | Phase arrangement method of in-phase two strip flat laid power cable |
JPS61199667A (en) * | 1985-02-28 | 1986-09-04 | Oki Electric Ind Co Ltd | Gaas field-effect transistor |
EP0287811A1 (en) * | 1987-04-23 | 1988-10-26 | International Business Machines Corporation | Field effect transistor and method of making |
CN113451387A (en) * | 2020-03-24 | 2021-09-28 | 清华大学 | Buffer region variable doping structure for overvoltage breakdown function and semiconductor device |
WO2021189838A1 (en) * | 2020-03-24 | 2021-09-30 | 清华大学 | Buffer region variable doping structure used for overvoltage breakdown function, and semiconductor device |
CN113451387B (en) * | 2020-03-24 | 2022-12-23 | 清华大学 | Buffer region variable doping structure for overvoltage breakdown function and semiconductor device |
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