JPS57199266A - Field effect transistor and manufacture thereof - Google Patents

Field effect transistor and manufacture thereof

Info

Publication number
JPS57199266A
JPS57199266A JP8430481A JP8430481A JPS57199266A JP S57199266 A JPS57199266 A JP S57199266A JP 8430481 A JP8430481 A JP 8430481A JP 8430481 A JP8430481 A JP 8430481A JP S57199266 A JPS57199266 A JP S57199266A
Authority
JP
Japan
Prior art keywords
layer
type
gate
specific resistance
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8430481A
Other languages
Japanese (ja)
Inventor
Yoshinori Yamada
Kazuhiro Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8430481A priority Critical patent/JPS57199266A/en
Publication of JPS57199266A publication Critical patent/JPS57199266A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce the channel series resistance by means of making the low specific resistance layer approach the PN junction region as near as possible by a method wherein the P type semiconductor layer followed by the resist mask is utilized as the mask for the ion injection. CONSTITUTION:The high specific resistance buffer layer 8 is formed on the semiinsulating substrate 1 while the N type GaAs operating layer 2 and the N<+> type high concentration regions 61, 62 concentrating the layer 2 from both sides are formed on said layer 8. Then the source electrode 4, drain electrode 5, P type gate region 9 and gate elctrode 3 are formed on the surface of the regions 61, 62. The region 9 is formed into the inverse rack type and when the low specific resistance layers 61, 62 are formed into he source, drain regions by means of the ion injection, the mask followed by the layer 9 is utilized. Moreover, each electrode of the source 4, gate 3 and drain 5 may be formed by means of the self alignment to minimize the parasitic element resistance making use of the inverse rack type.
JP8430481A 1981-06-03 1981-06-03 Field effect transistor and manufacture thereof Pending JPS57199266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8430481A JPS57199266A (en) 1981-06-03 1981-06-03 Field effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8430481A JPS57199266A (en) 1981-06-03 1981-06-03 Field effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57199266A true JPS57199266A (en) 1982-12-07

Family

ID=13826739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8430481A Pending JPS57199266A (en) 1981-06-03 1981-06-03 Field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57199266A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149479A (en) * 1984-08-18 1986-03-11 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149479A (en) * 1984-08-18 1986-03-11 Fujitsu Ltd Semiconductor device

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