JPS5577173A - Preparation of insulating gate-type electric field- effective transistor - Google Patents

Preparation of insulating gate-type electric field- effective transistor

Info

Publication number
JPS5577173A
JPS5577173A JP14972778A JP14972778A JPS5577173A JP S5577173 A JPS5577173 A JP S5577173A JP 14972778 A JP14972778 A JP 14972778A JP 14972778 A JP14972778 A JP 14972778A JP S5577173 A JPS5577173 A JP S5577173A
Authority
JP
Japan
Prior art keywords
drain
source
channel
same time
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14972778A
Other languages
Japanese (ja)
Inventor
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14972778A priority Critical patent/JPS5577173A/en
Publication of JPS5577173A publication Critical patent/JPS5577173A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve high frequency characteristics, by forming channel, source and drain of different thickness on a semi-insulating GaAs substrate at the same time by making utilization of ion-injecting technology.
CONSTITUTION: An SiO2 film 22, whose channel-forming section is specially made thicker, is formed on a semi-insulating GaAs substrate 21 and Si ion is injected, channel, source and drain of different layer thickness are formed at the same time. By eliminating the film 22 after annealing in N2, AuGe alloy electrodes 25 and 26 are provided. By covering with positive type resist 27, an oxide film 28 is formed by anodizing process. And then, Al is soldered to provide a gate electrode 29 and the resist is removed. Since it is possible, in this manner, to simply form channel, source and drain of different layer thickness at the same time, and as the source drain layer is thick, parastic resistance can be lowered and element characteristics can be improved.
COPYRIGHT: (C)1980,JPO&Japio
JP14972778A 1978-12-05 1978-12-05 Preparation of insulating gate-type electric field- effective transistor Pending JPS5577173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14972778A JPS5577173A (en) 1978-12-05 1978-12-05 Preparation of insulating gate-type electric field- effective transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14972778A JPS5577173A (en) 1978-12-05 1978-12-05 Preparation of insulating gate-type electric field- effective transistor

Publications (1)

Publication Number Publication Date
JPS5577173A true JPS5577173A (en) 1980-06-10

Family

ID=15481482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14972778A Pending JPS5577173A (en) 1978-12-05 1978-12-05 Preparation of insulating gate-type electric field- effective transistor

Country Status (1)

Country Link
JP (1) JPS5577173A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178372A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Insulating gate field-effect transistor and its manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968681A (en) * 1972-11-06 1974-07-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968681A (en) * 1972-11-06 1974-07-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178372A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Insulating gate field-effect transistor and its manufacture

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