JPS5577173A - Preparation of insulating gate-type electric field- effective transistor - Google Patents
Preparation of insulating gate-type electric field- effective transistorInfo
- Publication number
- JPS5577173A JPS5577173A JP14972778A JP14972778A JPS5577173A JP S5577173 A JPS5577173 A JP S5577173A JP 14972778 A JP14972778 A JP 14972778A JP 14972778 A JP14972778 A JP 14972778A JP S5577173 A JPS5577173 A JP S5577173A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- source
- channel
- same time
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve high frequency characteristics, by forming channel, source and drain of different thickness on a semi-insulating GaAs substrate at the same time by making utilization of ion-injecting technology.
CONSTITUTION: An SiO2 film 22, whose channel-forming section is specially made thicker, is formed on a semi-insulating GaAs substrate 21 and Si ion is injected, channel, source and drain of different layer thickness are formed at the same time. By eliminating the film 22 after annealing in N2, AuGe alloy electrodes 25 and 26 are provided. By covering with positive type resist 27, an oxide film 28 is formed by anodizing process. And then, Al is soldered to provide a gate electrode 29 and the resist is removed. Since it is possible, in this manner, to simply form channel, source and drain of different layer thickness at the same time, and as the source drain layer is thick, parastic resistance can be lowered and element characteristics can be improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14972778A JPS5577173A (en) | 1978-12-05 | 1978-12-05 | Preparation of insulating gate-type electric field- effective transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14972778A JPS5577173A (en) | 1978-12-05 | 1978-12-05 | Preparation of insulating gate-type electric field- effective transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5577173A true JPS5577173A (en) | 1980-06-10 |
Family
ID=15481482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14972778A Pending JPS5577173A (en) | 1978-12-05 | 1978-12-05 | Preparation of insulating gate-type electric field- effective transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5577173A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57178372A (en) * | 1981-04-27 | 1982-11-02 | Sumitomo Electric Ind Ltd | Insulating gate field-effect transistor and its manufacture |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4968681A (en) * | 1972-11-06 | 1974-07-03 |
-
1978
- 1978-12-05 JP JP14972778A patent/JPS5577173A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4968681A (en) * | 1972-11-06 | 1974-07-03 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57178372A (en) * | 1981-04-27 | 1982-11-02 | Sumitomo Electric Ind Ltd | Insulating gate field-effect transistor and its manufacture |
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