JPS5764967A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5764967A
JPS5764967A JP55141318A JP14131880A JPS5764967A JP S5764967 A JPS5764967 A JP S5764967A JP 55141318 A JP55141318 A JP 55141318A JP 14131880 A JP14131880 A JP 14131880A JP S5764967 A JPS5764967 A JP S5764967A
Authority
JP
Japan
Prior art keywords
insulating film
region
type
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55141318A
Other languages
Japanese (ja)
Other versions
JPH0234171B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55141318A priority Critical patent/JPS5764967A/en
Publication of JPS5764967A publication Critical patent/JPS5764967A/en
Publication of JPH0234171B2 publication Critical patent/JPH0234171B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain the capacitance connected in series to a short-channel FET for the subject semiconductor device by a method wherein the first region, on which a semiconductor or conductor was selectively provided directly and through the intermediary of an insulating film, is formed on a semiconductor substrate and the second semiconductor region is formed below the gate electrode provided on the insulating film on the side face of the first region, with an interval first region. CONSTITUTION:A field oxide film 2 and an N type ion-implanting layer 20 are formed on a P type Si substrate 1 using an Si3N4 as a mask, a gate insulating film 11 (dielectric 15 for capacitance) is newly provided and an N type polycrystalline Si3 having vertical side face is selectively formed. An SiO2 19 is covered on the above, apertures 41 and 42 are provided and an Si layer 5 is superposed by selecting a conductive type and the density of impurities. A gate electrode 6 and a lead 9 are provided by performing a vertical etching selectively and when an N type source 13 is formed by ion implantation, an IGFET having a short channel 12 can be obtained, and a series capacitance having an opposed electrode N-layer 3 is formed using a drain 14 as an electrode and through the intermediary of an insulating film 15.
JP55141318A 1980-10-08 1980-10-08 Semiconductor device Granted JPS5764967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55141318A JPS5764967A (en) 1980-10-08 1980-10-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55141318A JPS5764967A (en) 1980-10-08 1980-10-08 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58125720A Division JPS5925266A (en) 1983-07-11 1983-07-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5764967A true JPS5764967A (en) 1982-04-20
JPH0234171B2 JPH0234171B2 (en) 1990-08-01

Family

ID=15289116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55141318A Granted JPS5764967A (en) 1980-10-08 1980-10-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5764967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131484A (en) * 1984-11-29 1986-06-19 Res Dev Corp Of Japan Semiconductor nonvolatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131484A (en) * 1984-11-29 1986-06-19 Res Dev Corp Of Japan Semiconductor nonvolatile memory

Also Published As

Publication number Publication date
JPH0234171B2 (en) 1990-08-01

Similar Documents

Publication Publication Date Title
GB1242896A (en) Semiconductor device and method of fabrication
JPS5710266A (en) Mis field effect semiconductor device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS55132072A (en) Mos semiconductor device
JPS54161282A (en) Manufacture of mos semiconductor device
JPS5764965A (en) Semiconductor device
JPS5764967A (en) Semiconductor device
JPS5687368A (en) Semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS5764966A (en) Semiconductor device
JPS5783059A (en) Manufacture of mos type semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS6433970A (en) Field effect semiconductor device
JPS5544748A (en) Field-effect transistor
JPS5771175A (en) Semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS55121680A (en) Manufacture of semiconductor device
JPS56131960A (en) Semiconductor device and its preparation
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS56146281A (en) Manufacture of semiconductor integrated circuit
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS57143866A (en) Insulating gate type field-effect transistor and its manufacture
JPS57184248A (en) Manufacture of semiconductor device
JPS5577173A (en) Preparation of insulating gate-type electric field- effective transistor
JPS5563876A (en) Field-effect semiconductor device