JPS5718363A - Msis type semiconductor element - Google Patents

Msis type semiconductor element

Info

Publication number
JPS5718363A
JPS5718363A JP9352080A JP9352080A JPS5718363A JP S5718363 A JPS5718363 A JP S5718363A JP 9352080 A JP9352080 A JP 9352080A JP 9352080 A JP9352080 A JP 9352080A JP S5718363 A JPS5718363 A JP S5718363A
Authority
JP
Japan
Prior art keywords
substrate
insulating film
source
semiconductor element
msis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9352080A
Other languages
Japanese (ja)
Inventor
Toshihiro Sekikawa
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP9352080A priority Critical patent/JPS5718363A/en
Publication of JPS5718363A publication Critical patent/JPS5718363A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To easily form the constituents for the subject semiconductor element by a method wherein a semi-insulating film having the same crystalizing property as a substrate is used for the constituents corresponding to the insulating film on the substrate. CONSTITUTION:A source and a drain regions 3 and 4 are separately provided in the vicinity of the surface of the substrate 1, a channel region 2 is located between the source and the drain, a gate electrode 6 is provided on the region 2 through the intermediary of a thin film 5 and electrodes 7 and 8 are attached to the source and the drain regions respectively. The thin film 5 below the electrode 6 consists of a semi-insulating film of GaAs, for example, having the same crystalizing property as the substrate 1, instead of the conventional insulating film. Accordingly, a specific method of formation such as a low-temperature plasma oxidizing method and the like is not required and the MIS structure can be obtained easily.
JP9352080A 1980-07-09 1980-07-09 Msis type semiconductor element Pending JPS5718363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9352080A JPS5718363A (en) 1980-07-09 1980-07-09 Msis type semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9352080A JPS5718363A (en) 1980-07-09 1980-07-09 Msis type semiconductor element

Publications (1)

Publication Number Publication Date
JPS5718363A true JPS5718363A (en) 1982-01-30

Family

ID=14084600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9352080A Pending JPS5718363A (en) 1980-07-09 1980-07-09 Msis type semiconductor element

Country Status (1)

Country Link
JP (1) JPS5718363A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999754A (en) * 1982-11-29 1984-06-08 Agency Of Ind Science & Technol Semiconductor device
US4532695A (en) * 1982-07-02 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Method of making self-aligned IGFET
JPH03128319U (en) * 1990-04-04 1991-12-24

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944678A (en) * 1972-08-30 1974-04-26
JPS5210392A (en) * 1975-07-11 1977-01-26 Aquitaine Petrole Process for preparing highhpolymeric diphosphorate ligand and metal derivatives thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944678A (en) * 1972-08-30 1974-04-26
JPS5210392A (en) * 1975-07-11 1977-01-26 Aquitaine Petrole Process for preparing highhpolymeric diphosphorate ligand and metal derivatives thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532695A (en) * 1982-07-02 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Method of making self-aligned IGFET
JPS5999754A (en) * 1982-11-29 1984-06-08 Agency Of Ind Science & Technol Semiconductor device
JPH03128319U (en) * 1990-04-04 1991-12-24

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