JPS55151370A - Field effect transistor and fabricating method of the same - Google Patents

Field effect transistor and fabricating method of the same

Info

Publication number
JPS55151370A
JPS55151370A JP5993679A JP5993679A JPS55151370A JP S55151370 A JPS55151370 A JP S55151370A JP 5993679 A JP5993679 A JP 5993679A JP 5993679 A JP5993679 A JP 5993679A JP S55151370 A JPS55151370 A JP S55151370A
Authority
JP
Japan
Prior art keywords
gate
drain
field effect
electrode
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5993679A
Other languages
Japanese (ja)
Inventor
Fumio Hasegawa
Yoichi Aono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5993679A priority Critical patent/JPS55151370A/en
Publication of JPS55151370A publication Critical patent/JPS55151370A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable mounting of source electrode upside down with solder in a field effect transistor by coating insulator all the portions except the source electrode on an operating region, gate and drain leading electrodes on a semi-insulating substrate and plating with gold on the source electrode at least. CONSTITUTION:An operation epitaxial layer 11 is grown on the semi-insulating GaAs substrate 10. Source, gate and drain electrodes 12, 13 and 14 are formed thereon. The gate electeode 13 on the operation layer and the drain electrode 14 thereon are completely coated with SiO2 25. SiO2 25 is coated excluding gate and drain leading electrodes 231 and 241 on the substrate. Then, gold is grown by field effect plating on the source electrode 12, and bridged over the gate electrode 13 and the drain electrode 14. Simultaneously, the same gold plating is executed also on the electrodes 231 and 241.
JP5993679A 1979-05-16 1979-05-16 Field effect transistor and fabricating method of the same Pending JPS55151370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5993679A JPS55151370A (en) 1979-05-16 1979-05-16 Field effect transistor and fabricating method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5993679A JPS55151370A (en) 1979-05-16 1979-05-16 Field effect transistor and fabricating method of the same

Publications (1)

Publication Number Publication Date
JPS55151370A true JPS55151370A (en) 1980-11-25

Family

ID=13127510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5993679A Pending JPS55151370A (en) 1979-05-16 1979-05-16 Field effect transistor and fabricating method of the same

Country Status (1)

Country Link
JP (1) JPS55151370A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843440A (en) * 1981-12-04 1989-06-27 United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Microwave field effect transistor
JPH098060A (en) * 1995-06-16 1997-01-10 Nec Corp Semiconductor device
US8716091B2 (en) 2010-03-30 2014-05-06 International Business Machines Corporation Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567171A (en) * 1978-11-13 1980-05-21 Mitsubishi Electric Corp Preparation of space wiring type field-effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567171A (en) * 1978-11-13 1980-05-21 Mitsubishi Electric Corp Preparation of space wiring type field-effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843440A (en) * 1981-12-04 1989-06-27 United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Microwave field effect transistor
JPH098060A (en) * 1995-06-16 1997-01-10 Nec Corp Semiconductor device
US8716091B2 (en) 2010-03-30 2014-05-06 International Business Machines Corporation Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain

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