JPS577158A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577158A
JPS577158A JP8162780A JP8162780A JPS577158A JP S577158 A JPS577158 A JP S577158A JP 8162780 A JP8162780 A JP 8162780A JP 8162780 A JP8162780 A JP 8162780A JP S577158 A JPS577158 A JP S577158A
Authority
JP
Japan
Prior art keywords
layer
emitter
type
source
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8162780A
Other languages
Japanese (ja)
Inventor
Keiji Kobayashi
Kazuyuki Miyakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8162780A priority Critical patent/JPS577158A/en
Publication of JPS577158A publication Critical patent/JPS577158A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To eliminate the fluctuation of emitter resistance and obtain stabilized characteristics by a method wherein an N type layer in a ring form is added to an emitter layer without permitting the former to contact the surface where an N type emitter layer and a P type base layer are joined, while a metal electrode contacting the added layer and the emitter layer is provided. CONSTITUTION:An N type Si substrate 1 is used as a collector and a P type base 12 is formed to selectively make an N type emitter. A ring-shaped P layer 14 is added to the N layer 13 and an SiO2 film 17, which is opened toward a portion 18 of the emitter inside the ring, is formed. An Al electrode 20 is also connected to the base 12 to complete the device. If the added layer 14 is considered as the gate of an FET and the surface of the portion 18 of the layer 13 to be the source, the gate and the source are short-circuited at the electrode 15. Hence, the emitter current becomes equal to the current between the source and the emitter when the voltage between the gate and the source is 0, so that the fluctuation of the emitter current can be suppressed.
JP8162780A 1980-06-17 1980-06-17 Semiconductor device Pending JPS577158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8162780A JPS577158A (en) 1980-06-17 1980-06-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8162780A JPS577158A (en) 1980-06-17 1980-06-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS577158A true JPS577158A (en) 1982-01-14

Family

ID=13751561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8162780A Pending JPS577158A (en) 1980-06-17 1980-06-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577158A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925271A (en) * 1982-08-02 1984-02-09 Sanyo Electric Co Ltd Transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925271A (en) * 1982-08-02 1984-02-09 Sanyo Electric Co Ltd Transistor
JPH0247855B2 (en) * 1982-08-02 1990-10-23 Sanyo Electric Co

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