JPS55148422A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS55148422A
JPS55148422A JP5566579A JP5566579A JPS55148422A JP S55148422 A JPS55148422 A JP S55148422A JP 5566579 A JP5566579 A JP 5566579A JP 5566579 A JP5566579 A JP 5566579A JP S55148422 A JPS55148422 A JP S55148422A
Authority
JP
Japan
Prior art keywords
film
silicon
electrode
metal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5566579A
Other languages
Japanese (ja)
Inventor
Mitsumasa Koyanagi
Tetsuya Hayashida
Naoki Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5566579A priority Critical patent/JPS55148422A/en
Publication of JPS55148422A publication Critical patent/JPS55148422A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To form an electrode-silicon substrate contact of a high heat-resisting propperty when electrically contacting a silicon substrate and a metalelectrode by using a metal-silicon double-layer film. CONSTITUTION:A small hole 3 is provided on the oxidized film 2 formed on a silicon substrate 1, and then a silicon film 4 and a metal film 5 are piled up. Next, the metal film 5 above the small hole 3 is removed, and impurities are added to the substrate 1 through the silicon film 4 by an ion injection, thereby forming an impurities-annexed region 7. At this time, impurities are also added to the silicon film 4, and a reliable electrical contact can be obtained. Hence, as the metal electrode 5 does not come in contact with the silicon substrate 1 directly, there arises no deterioration in the electrode-substrate contact caused by a heat-treatment. This electrode structure can be applied to the lead out section of a gate electrode and it has a wide range of application.
JP5566579A 1979-05-09 1979-05-09 Manufacturing of semiconductor device Pending JPS55148422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5566579A JPS55148422A (en) 1979-05-09 1979-05-09 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5566579A JPS55148422A (en) 1979-05-09 1979-05-09 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55148422A true JPS55148422A (en) 1980-11-19

Family

ID=13005142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5566579A Pending JPS55148422A (en) 1979-05-09 1979-05-09 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55148422A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180863A (en) * 1984-09-27 1986-04-24 Toshiba Corp Manufacture of semiconductor device
JPH04132226A (en) * 1990-09-25 1992-05-06 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54141585A (en) * 1978-04-26 1979-11-02 Nec Corp Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54141585A (en) * 1978-04-26 1979-11-02 Nec Corp Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180863A (en) * 1984-09-27 1986-04-24 Toshiba Corp Manufacture of semiconductor device
JPH04132226A (en) * 1990-09-25 1992-05-06 Nec Corp Manufacture of semiconductor device

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