JPS5737872A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5737872A JPS5737872A JP11387080A JP11387080A JPS5737872A JP S5737872 A JPS5737872 A JP S5737872A JP 11387080 A JP11387080 A JP 11387080A JP 11387080 A JP11387080 A JP 11387080A JP S5737872 A JPS5737872 A JP S5737872A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- bases
- parastic
- electrodes
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a high-accuracy T<2>L by aligning the electrode leads of compound semiconductor elements to ensure even formation of a Schottky barrier simply by the replacement of individual electrodes under limited influence of parastic resistance. CONSTITUTION:A collector 62, bases 63 and 64, a collector connection layer 65 and emitters 71 and 72 and 73 and 74 within the bases 63 and 64 are formed electrically separated from each other on an SiO2 film 67 over an Si substrate 61. Simultaneously with collector and emitter electrodes, an window is etched through the collector 62 facing the bases 63 and 64 in such a manner as to include a part of the bases to attach metal electrodes thereto. The electrode 69 forms a Schottkey barrier on the collector 62. Therefore, the parastic resistance RD shows its minimum in the electrodes 73 and 74 while its maximum in the electrode 71. As compared with the previous art, this can reduce the parastic collector resistance between emitters thereby enabling marked curtailment of the input current while deep saturation between the bases and the collector with respect to the input voltage at a low potential level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11387080A JPS5737872A (en) | 1980-08-19 | 1980-08-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11387080A JPS5737872A (en) | 1980-08-19 | 1980-08-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5737872A true JPS5737872A (en) | 1982-03-02 |
| JPH0120546B2 JPH0120546B2 (en) | 1989-04-17 |
Family
ID=14623165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11387080A Granted JPS5737872A (en) | 1980-08-19 | 1980-08-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5737872A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61114755A (en) * | 1984-11-09 | 1986-06-02 | 株式会社御池鐵工所 | Compression and heating type grinder |
-
1980
- 1980-08-19 JP JP11387080A patent/JPS5737872A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61114755A (en) * | 1984-11-09 | 1986-06-02 | 株式会社御池鐵工所 | Compression and heating type grinder |
| JPH0148821B2 (en) * | 1984-11-09 | 1989-10-20 | Miike Tetsukosho Kk |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0120546B2 (en) | 1989-04-17 |
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