JPS6329428B2 - - Google Patents
Info
- Publication number
- JPS6329428B2 JPS6329428B2 JP18641183A JP18641183A JPS6329428B2 JP S6329428 B2 JPS6329428 B2 JP S6329428B2 JP 18641183 A JP18641183 A JP 18641183A JP 18641183 A JP18641183 A JP 18641183A JP S6329428 B2 JPS6329428 B2 JP S6329428B2
- Authority
- JP
- Japan
- Prior art keywords
- phototransistor
- region
- semiconductor device
- optically coupled
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical group NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】
＜技術分野＞
本発明は発光ダイオードとホトトランジスタを
１つのパツケージに封入してなる光結合半導体装
置に関する。DETAILED DESCRIPTION OF THE INVENTION <Technical Field> The present invention relates to an optically coupled semiconductor device comprising a light emitting diode and a phototransistor sealed in one package.
＜従来技術＞
光結合半導体装置において、発光ダイオードと
ホトトランジスタ間に急峻なパルス電圧が掛かる
と、ホトトランジスタが誤動作する現象はよく知
られている。これは、発光ダイオードとホトトラ
ンジスタ間の容量による静電カツプリングによる
ものである。<Prior Art> It is well known that in an optically coupled semiconductor device, when a steep pulse voltage is applied between a light emitting diode and a phototransistor, the phototransistor malfunctions. This is due to electrostatic coupling due to the capacitance between the light emitting diode and the phototransistor.
第１図に従来のホトトランジスタ側の構造を、
第２図に光結合半導体装置の等価回路を示す。 Figure 1 shows the structure of the conventional phototransistor side.
FIG. 2 shows an equivalent circuit of the optically coupled semiconductor device.
発光ダイオードLEDとホトトランジスタPT間
の容量は、ホトトランジスタのＮ型コレクタ領域
１の表面積に比例する容量CGPCと、P+型ベース領
域２の表面積に比例する容量CGPBと、N+型エミ
ツタ領域３の表面積に比例する容量CGPEに分離で
きる。容量CGPC、CGPB、CGPEにおいて、最も重要
なものはベース領域２の表面積に比例する容量
CGPBである。なぜならば、容量CGPBに対応する静
電カツプリングがベース電流となり、hFE（一般に
hFEは10〜5000）倍に増幅されるためである。 The capacitance between the light emitting diode LED and the phototransistor PT is a capacitance C GPC proportional to the surface area of the N type collector region 1 of the phototransistor, a capacitance C GPB proportional to the surface area of the P + type base region 2, and an N + type emitter. It can be separated into a capacitance C GPE proportional to the surface area of region 3. The most important capacitance in C GPC , C GPB , and C GPE is the capacitance proportional to the surface area of base region 2.
C GPB . This is because the electrostatic coupling corresponding to the capacitance C GPB becomes the base current, and h FE (generally
This is because h FE is amplified 10 to 5000) times.
＜発明の目的＞
本発明はこのような容量CGPBを減少して、静電
カツプリングによる誤動作を防止した構造の光結
合半導体装置を提供するものである。<Object of the Invention> The present invention provides an optically coupled semiconductor device having a structure in which such capacitance C GPB is reduced and malfunctions due to electrostatic coupling are prevented.
＜実施例＞
第３図に本発明光結合半導体装置のホトトラン
ジスタの構造例を示す。Ｎ型コレクタ領域１、
P+型ベース領域２、N+型エミツタ領域３の基本
的構造は、第１図のものと同じである。しかし、
ここではベース領域２の主たる部分を覆うように
該当部にエミツタ領域３を形成している。この結
果、ベース領域２の表面積に比例する容量CGPBは
大幅に減少し、これに対応する静電カツプリング
による影響は大幅に低減される。<Example> FIG. 3 shows an example of the structure of a phototransistor of the optically coupled semiconductor device of the present invention. N-type collector region 1,
The basic structures of the P + type base region 2 and the N + type emitter region 3 are the same as those in FIG. but,
Here, the emitter region 3 is formed in a corresponding portion so as to cover the main portion of the base region 2. As a result, the capacitance C GPB , which is proportional to the surface area of the base region 2, is significantly reduced and the corresponding effects due to electrostatic coupling are significantly reduced.
また図示のように、アルミニウム等の金属層４
を、コレクタ・ベース接合５とエミツタ・ベース
接合６上にそれぞれはみ出すよう形成し、エミツ
タ電極７等を介してエミツタ領域３に接続すると
更に効果的である。この場合、ベース電極８以外
のベース領域２の表面は、すべて実質的にエミツ
タ領域３及び上記金属層４でシールドされること
になる。又、必要ならば、ベース電極８も省略し
てよい。 In addition, as shown in the figure, a metal layer 4 such as aluminum
It is more effective if they are formed so as to protrude over the collector-base junction 5 and the emitter-base junction 6, respectively, and are connected to the emitter region 3 via the emitter electrode 7 or the like. In this case, the entire surface of the base region 2 other than the base electrode 8 is substantially shielded by the emitter region 3 and the metal layer 4. Furthermore, if necessary, the base electrode 8 may also be omitted.
なお、エミツタ領域３は薄く、コレクタ・ベー
ス接合５における光電流生成にはほとんど影響の
ないようにできる。もちろん、エミツタ電極７も
充分小さく、ベース領域３での受光作用に支障は
ない。また、本発明は、NPNP構造を有するホ
トサイリスタ、ホトトライアツクにも適用でき
る。 Note that the emitter region 3 is thin and can be made to have almost no effect on photocurrent generation at the collector-base junction 5. Of course, the emitter electrode 7 is also sufficiently small and does not interfere with the light receiving function in the base region 3. Furthermore, the present invention can also be applied to photothyristors and phototriaxes having an NPNP structure.
＜発明の効果＞
以上のように本発明によれば、受光部側のホト
トランジスタの電池増幅率hFEより、入出力間の
電流伝達比が大きくとれる光結合半導体装置にあ
つて、構成簡単なシールド構造により、電流増幅
率hFEに従つて顕著に表われる、光結合半導体装
置における静電カツプリングの影響を除去でき、
急峻なパルス電圧印加による誤動作をなくして有
用な光結合半導体装置が提供できる。<Effects of the Invention> As described above, according to the present invention, an optically coupled semiconductor device in which the current transfer ratio between input and output can be made larger than the cell amplification factor h FE of the phototransistor on the light-receiving part side can be realized with a simple configuration. The shield structure can eliminate the effects of electrostatic coupling in the optically coupled semiconductor device, which becomes noticeable as the current amplification factor h FE increases.
A useful optically coupled semiconductor device can be provided by eliminating malfunctions caused by application of steep pulse voltages.
第１図は従来のホトトランジスタ側構造を示す
断面図、第２図は光結合半導体装置の静電カツプ
リングを説明する等価回路、第３図は本発明の一
実施例におけるホトトランジスタ側構造を有す断
面図である。
１……コレクタ領域、２……ベース領域、３…
…エミツタ領域、LED……発光ダイオード、PT
……ホトトランジスタ。
FIG. 1 is a sectional view showing a conventional phototransistor side structure, FIG. 2 is an equivalent circuit explaining electrostatic coupling of an optically coupled semiconductor device, and FIG. 3 is a phototransistor side structure in an embodiment of the present invention. FIG. 1... Collector area, 2... Base area, 3...
...Emitter area, LED...Light emitting diode, PT
...Phototransistor.
Claims (1)
パツケージに封入してなる光結合半導体装置にお
いて、ホトトランジスタのベース領域の主たる部
分にエミツタ領域を形成するとともに、露出する
ベース領域に絶縁物を介して金属層を形成し、ベ
ース電極以外のベース領域の表面を、前記エミツ
タ領域及び前記金属層によりシールドしてなるこ
とを特徴とする光結合半導体装置。1. In an optically coupled semiconductor device in which a light emitting diode and a phototransistor are sealed in one package, an emitter region is formed in the main part of the base region of the phototransistor, and a metal layer is formed on the exposed base region via an insulator. an optically coupled semiconductor device, wherein the surface of the base region other than the base electrode is shielded by the emitter region and the metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58186411A JPS5994476A (en) | 1983-10-03 | 1983-10-03 | Photocoupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58186411A JPS5994476A (en) | 1983-10-03 | 1983-10-03 | Photocoupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5994476A JPS5994476A (en) | 1984-05-31 |
| JPS6329428B2 true JPS6329428B2 (en) | 1988-06-14 |
Family
ID=16187944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58186411A Granted JPS5994476A (en) | 1983-10-03 | 1983-10-03 | Photocoupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994476A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195581A (en) * | 1984-10-16 | 1986-05-14 | Toshiba Corp | Photocoupler |
| JPH0575159A (en) * | 1991-09-18 | 1993-03-26 | Nec Corp | Optical semiconductor device |
| DE59405248D1 (en) * | 1993-09-23 | 1998-03-19 | Siemens Ag | Optocoupler and method for its production |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4871583A (en) * | 1971-12-27 | 1973-09-27 |
-
1983
- 1983-10-03 JP JP58186411A patent/JPS5994476A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4871583A (en) * | 1971-12-27 | 1973-09-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5994476A (en) | 1984-05-31 |
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