JPS6158281A - Photo coupler - Google Patents
Photo couplerInfo
- Publication number
- JPS6158281A JPS6158281A JP59182084A JP18208484A JPS6158281A JP S6158281 A JPS6158281 A JP S6158281A JP 59182084 A JP59182084 A JP 59182084A JP 18208484 A JP18208484 A JP 18208484A JP S6158281 A JPS6158281 A JP S6158281A
- Authority
- JP
- Japan
- Prior art keywords
- light
- chip
- photodiode
- photo diode
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- RNNBHZYEKNHLKT-UHFFFAOYSA-N isopropylmethylpyrazolyl dimethylcarbamate Chemical compound CC(C)N1N=C(C)C=C1OC(=O)N(C)C RNNBHZYEKNHLKT-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NBJBFKVCPBJQMR-APKOLTMOSA-N nff 1 Chemical compound C([C@H](NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H]1CCCN1C(=O)[C@H](CCCCN)NC(=O)[C@@H]1CCCN1C(=O)CC=1C2=CC=C(C=C2OC(=O)C=1)OC)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCCNC=1C(=CC(=CC=1)[N+]([O-])=O)[N+]([O-])=O)C(=O)NCC(O)=O)C1=CC=CC=C1 NBJBFKVCPBJQMR-APKOLTMOSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は特に高速応答を要求されるホトカプラの受光チ
ップの構造の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to an improvement in the structure of a photo-receiving chip of a photocoupler, which particularly requires high-speed response.
〈従来技術〉
従来、ホトカプラは発光素子と受光素子の組み合わせに
よって構成され、パルストランスに替わる信号インター
フェイス用の素子として発展してきた。又、近年のマイ
コンの普及によりその用途は拡大し、高速応答、低電流
、駆動の機能が要求されている〇
一般にホトカプラにおける受光素子の光電流はＤｒｉｆ
ｔ成分とＤｉｆｕｓｉｏｎ成分からなる。受光素子とし
てホトダイオードを使った場合の充電流応答特性を第２
図に示す。同図（ａ）が発光素子に印加される駆動パル
ス、同図（ｂ）が受光素子の充電流波形である。ここで
、低電流駆動（すなわち、高感度）の高速応答が要求さ
れるホトカプラにおいては第２図（ｂ）のＤｉｆｕｓｉ
ｏｎ成分である寿命時間の長い光電流が応答特性の遅れ
の原因となる。第３図は従来の受光素子（ホトダイオー
ド）の構造を示す。<Prior Art> Conventionally, a photocoupler is constructed by a combination of a light emitting element and a light receiving element, and has been developed as a signal interface element in place of a pulse transformer. In addition, with the spread of microcontrollers in recent years, their uses have expanded, and high-speed response, low current, and drive functions are required. In general, the photocurrent of the photodetector in a photocoupler is Drift.
It consists of a t component and a diffusion component. The charging current response characteristics when using a photodiode as a light receiving element are shown in the second section.
As shown in the figure. FIG. 4(a) shows a driving pulse applied to the light emitting element, and FIG. 1(b) shows the charging flow waveform of the light receiving element. Here, in a photocoupler that requires low current drive (that is, high sensitivity) and high-speed response, the Diffusi
The photocurrent, which is the ON component and has a long lifetime, causes a delay in response characteristics. FIG. 3 shows the structure of a conventional light receiving element (photodiode).
同図において１はＰ型基板、２はＮ型エピタキシャル層
、３はＰアイソレーシヲン層、４は透明な絶縁層である
。この構造においては、ホトダイオード周辺部において
多くのＤｉｆｕｓｉｏｎ成分の光電流を発生させる光子
を遮断する手段をもっていない。一方、第４図は前面光
に対しチップ周辺部にメタル等により遮光手段５を設け
て上記欠点をカバーしたホトダイオードの構造を示す。In the figure, 1 is a P type substrate, 2 is an N type epitaxial layer, 3 is a P isolation layer, and 4 is a transparent insulating layer. This structure does not have a means for blocking photons that generate many diffusion component photocurrents in the peripheral area of the photodiode. On the other hand, FIG. 4 shows the structure of a photodiode in which a light shielding means 5 made of metal or the like is provided at the periphery of the chip against front light to cover the above-mentioned drawbacks.
しかし、第４図の構造のものにおいても、ホトダイオー
ドを半導体テップエツジに隣接して配置した構造を採用
する場合、チップ側面に照射された光による光子をひろ
う為にＤｉｆｕｓｉｏｎ成分の光電流を遮断することが
できなかった。この問題を解決する為には、チップの側
面壁にＡｇペースト等の遮光材料を配置する等の方法が
考えられるが、材料費のアップ、製造工数のアンプある
いは歩留まりの低下等の要因があり、コスト高につなが
ってしまう。However, even in the structure shown in Fig. 4, if a structure in which the photodiode is placed adjacent to the semiconductor chip edge is adopted, the photocurrent of the diffusion component must be blocked to collect photons from the light irradiated on the side of the chip. I couldn't do it. In order to solve this problem, methods such as placing a light-shielding material such as Ag paste on the side walls of the chip can be considered, but this increases material costs, increases manufacturing man-hours, and reduces yield. This will lead to higher costs.
く目 的〉
本発明は上記欠点を解消する為になされたものであシ、
チップ側面よシ光子をひろい発生したＤｉｆｕｓｉｏｎ
成分の光電流を信号検出用ホトダイオードに影響しない
ようにした構造を提案するものである。Purpose> The present invention has been made in order to eliminate the above-mentioned drawbacks.
Diffusion generated by spreading photons from the side of the chip
This paper proposes a structure in which the component photocurrent does not affect the signal detection photodiode.
〈実施例〉
第１図は本発明に係るホトカプラの一実施例の受光素子
の構造を示すもので同図（ａ）は一部側断面図、同図（
ｂ）は一部平面図を示す。同図において１はＰ型基板、
２はＮＷエピタキシャル層、３はＰ＋アイソレージコン
層、４は透明な絶縁層である。<Embodiment> FIG. 1 shows the structure of a light receiving element of an embodiment of the photocoupler according to the present invention, and FIG.
b) shows a partial plan view. In the figure, 1 is a P-type substrate;
2 is an NW epitaxial layer, 3 is a P+ isolator layer, and 4 is a transparent insulating layer.
６はチップの周辺部に設けられたＮ型エピタキシャル層
であシ、上記Ｐ型基板１とＮ型エピタキシャル層２との
ＰＮ接合からなる信号検出用の第１のホトダイオードと
は別個に、上記Ｐ型基板１及びＰアイソレーン４フ層３
とＮ型エピタキシャル層６とのＰＮ接合からなる第２の
ホトダイオードが形成される。７はメタル等による遮光
手段であシ、該遮光手段７によシ前面からの光によるＤ
ｉｆｕｓｉｏｎ成分を防止している。Reference numeral 6 denotes an N-type epitaxial layer provided at the periphery of the chip. Type substrate 1 and P isolane 4 layer 3
A second photodiode is formed by a PN junction between the N-type epitaxial layer 6 and the N-type epitaxial layer 6. Reference numeral 7 is a light shielding means made of metal or the like, and the light shielding means 7 prevents light from entering from the front.
Prevents ifusion components.
第５図に以上の受光素子の等何回路を示す。同図に示す
如く信号検出用の第１のホトダイオード８とは別個に第
２のホトダイオード９が形成され、該第２のホトダイオ
ード９のアノード及びカソードは基板電位（アース）と
している。この構造の為にはエミッタ拡散（Ｎ ）とア
ース配線メタルとのコンタクトを取ればよい。FIG. 5 shows an equivalent circuit of the above light receiving element. As shown in the figure, a second photodiode 9 is formed separately from the first photodiode 8 for signal detection, and the anode and cathode of the second photodiode 9 are set at a substrate potential (ground). For this structure, it is sufficient to make contact between the emitter diffusion (N2) and the ground wiring metal.
以上の構造の受光素子においてチップ側面に照射された
光によって励起された光電流は第１のホトダイオード８
に到達することなく、第２のホトダイオード９により吸
収されてしまう。すなわち、チップ側面からのＤｉｆｕ
ｓｉｏｎ成分は第１のホトダイオード８の出力に影響し
なくなる。つｔｂ前面光に対しては、メタル等による遮
光手段７を用い、側面光に対しては第２のホトダイオー
ド９による吸収手段を用いることにより、光電流のＤｉ
ｆｕｓｉｏｎ成分を極力おさえることが可能となる０第
６図に以上の受光素子を組み込んでなるホト−カプラの
構造を示す。同図（ａ）は平面図、同図（ｂ）は側断面
図、同図（ｃ）は正面断面図である。１０は赤外発光ダ
イオードチップ、１１は受光素子チップであり、これら
は同一平面上に設置される０１１ａは受光素子チップ１
１内に設けられた信号検出用の第１のホトダイオードで
あり、ｌｌｂは上記赤外発光ダイオードチップ１０と第
１のホトダイオードｌｌａの間に配置され、チップ側面
からのＤｉｆｕｓｉｏｎ成分の混入を防止する為の第２
のホトダイオードである。又１２は透光性樹脂、１３は
ヒートシンクである。尚、受光素子チップ１１はホトダ
イ−オードと、増幅・波形整形等の信号処理回路を１チ
ツプに集積化した素子（ＯＰＩＣ化受光床受光素子る。In the photodetector having the above structure, the photocurrent excited by the light irradiated onto the side surface of the chip is transferred to the first photodiode 8.
It is absorbed by the second photodiode 9 without reaching . In other words, Difu from the side of the chip
sion component no longer influences the output of the first photodiode 8. For the front light, a light shielding means 7 made of metal or the like is used, and for the side light, the second photodiode 9 is used as an absorption means.
FIG. 6 shows the structure of a photocoupler incorporating the above-mentioned light receiving element. 3(a) is a plan view, FIG. 2(b) is a side sectional view, and FIG. 4(c) is a front sectional view. 10 is an infrared light emitting diode chip, 11 is a light receiving element chip, and these are installed on the same plane. 011a is the light receiving element chip 1.
llb is a first photodiode for signal detection provided in the infrared light emitting diode chip 10 and the first photodiode lla, and llb is arranged between the infrared light emitting diode chip 10 and the first photodiode lla to prevent diffusion components from entering from the side of the chip. the second of
photodiode. Further, 12 is a transparent resin, and 13 is a heat sink. The light-receiving element chip 11 is an element (OPIC-based light-receiving floor light-receiving element) in which a photodiode and a signal processing circuit such as amplification and waveform shaping are integrated into one chip.
同図の如き赤外発光ダイオードチップ１０と受光素子チ
ップ１１とが同一平面上に設置される構造のホトカプラ
では受光素子チップ１１の側面からの光の影響が強く、
本発明に係る構造が極めて有利である。In a photocoupler with a structure in which an infrared light emitting diode chip 10 and a light receiving element chip 11 are installed on the same plane as shown in the figure, the influence of light from the side of the light receiving element chip 11 is strong.
The structure according to the invention is extremely advantageous.
く効 果〉
本発明によれば高感度で高速応答のホトカプラを得るこ
とができる。Effects> According to the present invention, a photocoupler with high sensitivity and high speed response can be obtained.
第１図は本発明に係るホトカプラの一実施例の受光素子
の構造を示し、同図（ａ）は一部側断面図、同図（ｂ）
は一部平面図、第２図は従来のホトカプラの充電流応答
特性を示す波形図、第３図及び第４図は従来の受光素子
の側断面図、第５図は本発明に係るホトカプラの一実施
例の受光素子の等価回路図、第６図は本発明に係るホト
カプラの一実施例の構造を示し、同図（ａ）は平面図、
同図（ｂ）は側断面図、同図（ｃ）は正面断面図を示す
。
図中 １＝Ｐ型基板 ２：Ｎ型エピタキシャル層 ３：
Ｐアインレーション層 ４：絶縁層５：遮光手段 ６：
Ｎｆｆ１エピタキシャル層７：遮光手段 ８：第１のホ
トダイオード ９：第２のホトダイオード １０：赤外
発光夕°イオードチノプ １１：受光素子チノフ。
代理人 弁理士 福 士 愛 彦（（ｔ！ｘ２名）第１
図
第２図
第３図
第４図
第５図FIG. 1 shows the structure of a light-receiving element of an embodiment of the photocoupler according to the present invention, and FIG. 1(a) is a partial side sectional view, and FIG. 1(b)
is a partial plan view, FIG. 2 is a waveform diagram showing the charging current response characteristics of a conventional photocoupler, FIGS. 3 and 4 are side sectional views of a conventional photodetector, and FIG. 5 is a diagram of a photocoupler according to the present invention. FIG. 6 is an equivalent circuit diagram of a light-receiving element according to an embodiment, and FIG. 6 shows the structure of an embodiment of a photocoupler according to the present invention, and FIG.
The same figure (b) shows a side sectional view, and the same figure (c) shows a front sectional view. In the figure 1 = P type substrate 2: N type epitaxial layer 3:
P inlation layer 4: Insulating layer 5: Light shielding means 6:
Nff1 epitaxial layer 7: Light shielding means 8: First photodiode 9: Second photodiode 10: Infrared emitting diode tinop 11: Light receiving element tinop. Agent Patent Attorney Aihiko Fuku ((t! x 2 people) 1st
Figure 2 Figure 3 Figure 4 Figure 5
Claims (1)
信号検出用ホトダイオードとは別個のホトダイオードを
設けたことを特徴とするホトカプラ。1. A photocoupler characterized in that a photodiode separate from a signal detection photodiode is provided near the side surface of the light-receiving element chip on the side of the light-emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59182084A JPS6158281A (en) | 1984-08-29 | 1984-08-29 | Photo coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59182084A JPS6158281A (en) | 1984-08-29 | 1984-08-29 | Photo coupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6158281A true JPS6158281A (en) | 1986-03-25 |
| JPH0224386B2 JPH0224386B2 (en) | 1990-05-29 |
Family
ID=16112077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59182084A Granted JPS6158281A (en) | 1984-08-29 | 1984-08-29 | Photo coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6158281A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114784131A (en) * | 2022-04-11 | 2022-07-22 | 西安微电子技术研究所 | Photosensitive diode, photosensitive operational amplifier circuit and photosensitive chip |
-
1984
- 1984-08-29 JP JP59182084A patent/JPS6158281A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114784131A (en) * | 2022-04-11 | 2022-07-22 | 西安微电子技术研究所 | Photosensitive diode, photosensitive operational amplifier circuit and photosensitive chip |
| CN114784131B (en) * | 2022-04-11 | 2023-05-16 | 西安微电子技术研究所 | Photosensitive diode, photosensitive operational amplifier circuit and photosensitive chip |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0224386B2 (en) | 1990-05-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |