JPS5992581A - Photo coupling semiconductor device - Google Patents
Photo coupling semiconductor deviceInfo
- Publication number
- JPS5992581A JPS5992581A JP57203138A JP20313882A JPS5992581A JP S5992581 A JPS5992581 A JP S5992581A JP 57203138 A JP57203138 A JP 57203138A JP 20313882 A JP20313882 A JP 20313882A JP S5992581 A JPS5992581 A JP S5992581A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- light
- light receiving
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 230000008878 coupling Effects 0.000 title abstract description 8
- 238000010168 coupling process Methods 0.000 title abstract description 8
- 238000005859 coupling reaction Methods 0.000 title abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000007257 malfunction Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】 く技術分野〉 本発明は光結合半導体装置に関するものである。[Detailed description of the invention] Technical fields> The present invention relates to an optically coupled semiconductor device.
〈従来技術〉
光結合半導体装置、例えば発光・受光素子を７つのパッ
ケージに封止したホトカプラにおいて、発光・受光素子
間に急峻なパルスを印加すると、受光素子が誤動作する
ことはよく知られている。<Prior art> It is well known that in an optically coupled semiconductor device, such as a photocoupler in which light emitting and light receiving elements are sealed in seven packages, if a steep pulse is applied between the light emitting and light receiving elements, the light receiving elements will malfunction. .
第１図は、ホトカプラ／において、発光素子−と受光素
子３間に急峻なパルスＶｐ （傾きｄｖ／ｄｔ）が印加
されたときの様子を示すもので、このようなパルスの印
加により受光素子３が誤動作する。Figure 1 shows the situation when a steep pulse Vp (gradient dv/dt) is applied between the light emitting element and the light receiving element 3 in a photocoupler. malfunctions.
これは、発光素子−と受光素子３間に容量による静電カ
ップリングが存在することによる。従来、これを防止す
るため、発光素子−と受光素子３間に導電性のメツシュ
を入れたり、受光素子３の表面に導電性透明フィルムを
付加していた。This is due to the existence of electrostatic coupling due to capacitance between the light emitting element and the light receiving element 3. Conventionally, in order to prevent this, a conductive mesh was inserted between the light emitting element and the light receiving element 3, or a conductive transparent film was added to the surface of the light receiving element 3.
ところで、受光素子として、ホトダイオードと増幅、信
号処理用のバイポーラＩＣ（集積回路）を一体化した光
学的ＩＣでは、静電カップリングによる受光素子への影
響はホトダイオード部において特に大きい。第一図は上
記光学的ＩＣのホトダイオード部の構成を示す断面図で
ある。ホトダイオードは、Ｐ型基板ダ及びＰ 型アイソ
レーション領域ｊと、Ｎ型エピタキシャル層２のＰ−Ｎ
接合部より形成されている。By the way, in an optical IC that integrates a photodiode and a bipolar IC (integrated circuit) for amplification and signal processing as a light receiving element, the influence of electrostatic coupling on the light receiving element is particularly large in the photodiode portion. FIG. 1 is a sectional view showing the structure of the photodiode section of the optical IC. The photodiode consists of a P-type substrate, a P-type isolation region j, and a P-N of an N-type epitaxial layer 2.
It is formed from a joint.
この場合、エピタキシャル層Ｚは発光素子に面している
ため、発光素子との間で容量をもつ。この容量を通して
発光素子と静電カップリングしており、発光・受光素子
間に急峻なパルスが印加されると、バイポーラＩＣ部で
信号が増幅、処理され誤動作を起こす。In this case, since the epitaxial layer Z faces the light emitting element, it has a capacitance between it and the light emitting element. It is electrostatically coupled to the light-emitting element through this capacitance, and when a steep pulse is applied between the light-emitting and light-receiving elements, the signal is amplified and processed in the bipolar IC section, causing malfunction.
なお、ホトダイオードのアイソレーション領域ｊも同様
に発光素子との間で静電カップリングされる。しかし、
このアイソレーション領域ｊは、光学的ＩＣ全体のグラ
ンド側となる、あるいは、バイポーラＩＣ部のグランド
部と接続されるためほとんど影響はない。Note that the isolation region j of the photodiode is also electrostatically coupled with the light emitting element. but,
This isolation region j becomes the ground side of the entire optical IC or is connected to the ground portion of the bipolar IC section, so it has almost no influence.
的
ドの面積に依存する。しかし、このような光学＼ＩＣに
おいて、バイポーラＩＣ部に入力される信号の大きさは
ホトダイオードの面積に比例するため、ホトダイオード
の面積はあまり小さくできない。Depends on the area of the target. However, in such an optical IC, the magnitude of the signal input to the bipolar IC section is proportional to the area of the photodiode, so the area of the photodiode cannot be made very small.
〈発明の目的〉
本発明は受光素子のＰ−Ｎ接合部の構造に改良を加え、
発光・受光素子間の静電カップリングの影響を低減した
ものである。<Object of the invention> The present invention improves the structure of the P-N junction of the light receiving element,
This reduces the effects of electrostatic coupling between the light emitting and light receiving elements.
〈実施例〉 以下第３図に従って本発明の一実施例を示す。<Example> An embodiment of the present invention will be shown below with reference to FIG.
第３図はホトカプラにおいて、ホトダイオードと増幅、
信号処理用のバイポーラＩｃを一体化した光学的ＩＣの
ホトダイオード部の構造を示す断面図である。Figure 3 shows a photocoupler with a photodiode and amplification.
FIG. 2 is a cross-sectional view showing the structure of a photodiode section of an optical IC integrated with a bipolar IC for signal processing.
Ｐ型基板／／及びＰ 型アイソレーション領域／、、２
とＮ型エピタキシャル層／３とで形成されるホトダイオ
ードと、このホトダイオードと並列接続されるように、
前記Ｐ＋型アイソレーション領するＮ型エピタキシャル
領域／３とにより第２のホトダイオードを形成して構成
される。P-type substrate // and P-type isolation region /, 2
and a photodiode formed of an N-type epitaxial layer /3, so as to be connected in parallel with this photodiode,
A second photodiode is formed by the N type epitaxial region /3 in the P+ type isolation region.
この構成によれば、Ｎ型エピタキ′シャル層／３の上面
部において、Ｎ 型コンタクト部（Ｎ型エピタキシャル
層／３の電極取出しｓ） ／、ｓ以外はなる。つまり、
これによって発光・受光素子間の静電カップリングの影
響を低減して、受光素子の誤動作が防止される。また、
この構造はＰ−Ｎ接合が２つ有することとなり、ホトダ
イオードの光に関する感度を増加する上でも有用である
。According to this configuration, on the top surface of the N-type epitaxial layer/3, the N-type contact portion (electrode extraction s of the N-type epitaxial layer/3) is formed except for s/. In other words,
This reduces the influence of electrostatic coupling between the light-emitting and light-receiving elements, thereby preventing malfunctions of the light-receiving elements. Also,
This structure has two PN junctions and is also useful in increasing the sensitivity of the photodiode to light.
なお、Ｎ コノタクト部／ｊ及びホトダイオード部以外
（バイポーラＩＣ部、トランジスタ、ダイオード、抵抗
等の構成部）も、適宜次に説明するように、多層配線技
術により静電シールドすることが可能である。Note that it is also possible to electrostatically shield parts other than the N contact part /j and the photodiode part (constituent parts such as the bipolar IC part, transistors, diodes, and resistors) by using multilayer wiring technology as described below.
第３図では、反射防止用の５ｉ０２膜／に上に、ポリイ
ミド樹脂、５ｉ０２．リンガラス、窒化膜等の絶縁層／
７を設け、アルミニウム等の金属戦線／♂によりシール
ドしている。金属配線／♂の電位は、グランド電位、電
源電位、又はその他の安定な電位に接続する。もちろん
、電位を浮かしておいても、一定の効果があることはい
うまでもない。In FIG. 3, a polyimide resin, 5i02. Insulating layer such as phosphor glass, nitride film, etc.
7 and is shielded by a metal front line/male made of aluminum etc. The potential of the metal wiring /♂ is connected to the ground potential, power supply potential, or other stable potential. Of course, it goes without saying that even if the potential is left floating, there is a certain effect.
以上、受光素子としてホトダイオードと増幅。Above is a photodiode and amplification as a light receiving element.
信号処理用バイポーラＩＣとを一体化したものについて
説明したが、ホトダイオード部の代りにホトトランジス
タ、ホトサイリスタを形成したものでも同様である。又
、一体化されたものに限らずホトダイオード、ホトトラ
ンジスタ、ホトサイリスタ等と、バイポーラＩｃをＪチ
ップで構成するものでもよい。更に、ホトカプラによら
ず、発光・受光素子を個別に作り、これらを組合わせて
これらの間に光の遮弊物がはいれるようにした構造のホ
トインタラプタにも適用可能である。Although the description has been given of a device in which a bipolar IC for signal processing is integrated, the same applies to a device in which a phototransistor or a photothyristor is formed in place of the photodiode section. Further, the structure is not limited to an integrated one, but may be one in which a photodiode, a phototransistor, a photothyristor, etc., and a bipolar IC are formed by a J chip. Furthermore, instead of using photocouplers, the present invention can also be applied to a photointerrupter having a structure in which light emitting and light receiving elements are made individually, and these are combined so that a light shielding material is inserted between them.
〈発明の効果〉
以上のように本発明は、光を受けて光電流を生成するＰ
−Ｎ接合部の構造を改良することにより光に対する感度
を増加させるとともに発光・受光素子間の静電カップリ
ングの影響を低減して、パルス印加による誤動作を防止
できるものであり、実用価値の高い有用な光結合半導体
装置が提供で<Effects of the Invention> As described above, the present invention has the following advantages:
- By improving the structure of the N junction, it increases the sensitivity to light and reduces the effect of electrostatic coupling between the light emitting and light receiving elements, preventing malfunctions caused by pulse application, and has high practical value. Useful optically coupled semiconductor devices available
第１図はホトカプラのパルス印加状態を説明する電気回
路図、第２図は従来例における受光素子の要部を示す断
面図、第３図は本発明の一実施例における受光素子の要
部を示す断面図である。Fig. 1 is an electric circuit diagram explaining the pulse application state of the photocoupler, Fig. 2 is a sectional view showing the main parts of a light receiving element in a conventional example, and Fig. 3 shows the main parts of a light receiving element in an embodiment of the present invention. FIG.
Claims (1)
導体装置において、光を受けて光電流を生成する受光素
子側のＰ −Ｎ接合部を基板及びアイソレーション領域
とエピタキシャル層により形成するとともに該Ｐ −Ｎ
接合部と電気的に並列関係になるように、前記アイソレ
ーションしてなることを特徴とする光結合半導体装置。1. In an optically coupled semiconductor device in which a light-emitting element and a light-receiving element are arranged facing each other, a P-N junction on the light-receiving element side that receives light and generates a photocurrent is formed by a substrate, an isolation region, and an epitaxial layer, and The P −N
An optically coupled semiconductor device characterized in that the isolation is performed so as to be electrically parallel to the junction portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57203138A JPS5992581A (en) | 1982-11-18 | 1982-11-18 | Photo coupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57203138A JPS5992581A (en) | 1982-11-18 | 1982-11-18 | Photo coupling semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5992581A true JPS5992581A (en) | 1984-05-28 |
| JPS6329426B2 JPS6329426B2 (en) | 1988-06-14 |
Family
ID=16469038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57203138A Granted JPS5992581A (en) | 1982-11-18 | 1982-11-18 | Photo coupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5992581A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0254426U (en) * | 1988-10-14 | 1990-04-19 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS519590A (en) * | 1974-07-12 | 1976-01-26 | Mitsubishi Electric Corp | |
| JPS5234352A (en) * | 1975-09-11 | 1977-03-16 | Allen Bradley Co | Resistor |
| JPS5914180A (en) * | 1982-07-15 | 1984-01-25 | Matsushita Electric Ind Co Ltd | Recording and reproducing device |
-
1982
- 1982-11-18 JP JP57203138A patent/JPS5992581A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS519590A (en) * | 1974-07-12 | 1976-01-26 | Mitsubishi Electric Corp | |
| JPS5234352A (en) * | 1975-09-11 | 1977-03-16 | Allen Bradley Co | Resistor |
| JPS5914180A (en) * | 1982-07-15 | 1984-01-25 | Matsushita Electric Ind Co Ltd | Recording and reproducing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6329426B2 (en) | 1988-06-14 |
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