JP2601462B2 - Photoexcited electron-emitting device - Google Patents
Photoexcited electron-emitting deviceInfo
- Publication number
- JP2601462B2 JP2601462B2 JP28424086A JP28424086A JP2601462B2 JP 2601462 B2 JP2601462 B2 JP 2601462B2 JP 28424086 A JP28424086 A JP 28424086A JP 28424086 A JP28424086 A JP 28424086A JP 2601462 B2 JP2601462 B2 JP 2601462B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitting device
- electron
- photoelectric conversion
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/312—Cold cathodes having an electric field perpendicular to the surface thereof
- H01J2201/3125—Metal-insulator-Metal [MIM] emission type cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Light Receiving Elements (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、光励起電子放出素子に係り、特に入射光を
光電変換領域によって光電変換し、生じた電子を、例え
ば導電領域と絶縁領域を介して設けられた金属膜とから
構成される電子放出素子（この構成の素子について、以
下、MIM型電子放出素子と記す）領域に注入して、電子
放出を行なう光励起電子放出素子に関する。Description: TECHNICAL FIELD The present invention relates to a photo-excited electron-emitting device, and in particular, photoelectrically converts incident light by a photoelectric conversion region, and generates generated electrons through, for example, a conductive region and an insulating region. The present invention relates to a photo-excited electron-emitting device that emits electrons by injecting electrons into a region of an electron-emitting device (hereinafter, referred to as an MIM-type electron-emitting device) formed of a metal film provided by the above method.
［従来技術］ 第３図は、MIM型電子放出素子の一般的な構成を示す
模式図である。[Prior Art] FIG. 3 is a schematic diagram showing a general configuration of a MIM type electron-emitting device.
MIM型の電子放出素子は、同図に示すように、金属M1
上に薄い絶縁層Ｉを介して薄い金属M2が積層形成された
構造を有している。そして、金属M2の仕事関数φmより
大きな電圧Ｖを金属M1およびM2間に印加するとによっ
て、絶縁層Ｉをトンネルした電子のうち真空準位より大
きなエネルギを有するものが金属M2表面から放出され
る。As shown in the figure, the MIM type electron-emitting device
It has a structure in which a thin metal layer M2 is formed with a thin insulating layer I interposed therebetween. Then, by a large voltage V than the work function phi m metal M2 is applied between the metal M1 and M2, is released from the metal M2 surface having a large energy from the vacuum level of the electrons tunnel through an insulating layer I .
このような素子で高い電子放出効率を得るためには、
絶縁層Ｉを絶縁破壊を生じない範囲で、また金属M2を電
流が十分流れる範囲で、各々できる限り薄く形成するこ
とが望ましい。In order to obtain high electron emission efficiency with such a device,
It is desirable that the insulating layer I be formed as thin as possible within a range that does not cause dielectric breakdown and within a range where a sufficient current flows through the metal M2.
第４図は、従来のMIM型電子放出素子の概略的断面図
である。同図に示すように、電子放出部Ｗでは金属M2が
薄く形成され、電子放出効率を高めている。FIG. 4 is a schematic sectional view of a conventional MIM type electron-emitting device. As shown in the figure, in the electron emission portion W, the metal M2 is formed thin, and the electron emission efficiency is increased.
［発明の目的］ 本発明は上記のMIM型電子放出素子から放出される電
子の量を光によって制御可能であり、且つ集積化が可能
で簡易な構成の電子放出素子を提供することを目的とす
る。[Object of the Invention] It is an object of the present invention to provide an electron-emitting device having a simple configuration in which the amount of electrons emitted from the above-mentioned MIM-type electron-emitting device can be controlled by light, and which can be integrated and has a simple structure. I do.
［発明の概要］ 本発明の光励起電子放出素子は、透明電極と、この透
明電極上に、例えば、一導電型半導体領域、反対導電型
半導体領域、導電領域を、順に積層させて設けられた複
数の光電変換領域と、該複数の光電変換領域を互いに分
離するように配置された絶縁領域と、この上に設けられ
た金属膜とからなることを特徴とする。[Summary of the Invention] A photoexcited electron-emitting device according to the present invention is provided with a transparent electrode and a plurality of layers formed by sequentially laminating, for example, a semiconductor region of one conductivity type, a semiconductor region of the opposite conductivity type, and a conductive region on the transparent electrode. , A plurality of photoelectric conversion regions, an insulating region arranged to separate the plurality of photoelectric conversion regions from each other, and a metal film provided thereon.
なお、該金属膜と前記光電変換領域の間にも絶縁領域
を有する構成も包含し、また金属膜の該光電変換領域の
上部に凹部を有する構成としても良い。更にまた、上記
透明電極は、光透過性基体上に設けられ、その上に上記
構造が形成されても良い。Note that a configuration having an insulating region between the metal film and the photoelectric conversion region is also included, and a configuration in which a concave portion is provided above the photoelectric conversion region of the metal film may be employed. Furthermore, the transparent electrode may be provided on a light-transmitting substrate, and the structure may be formed thereon.
［作用］ 本発明の光励起電子放出素子は、透明電極上に一導電
型半導体領域と反対導電型半導体領域と導電領域とを積
層させて構成される光電変換領域と、該導電領域と絶縁
領域と金属層とで構成されるMIM型電子放出素子領域と
を光透過性基体上に形成して一体化し、且つ光電変換領
域の電極とMIM型電子放出素子領域の導電領域を共有し
て設けるとともに絶縁領域を設けて電気的絶縁を行い、
簡易で集積化の可能な構成としたものである。また、該
光変換領域を前記MIM型電子放出素子の電子放出部たる
金属層の凹部の下の領域にのみ設け、効率的に電子放出
を行わせようとするものである。[Function] The photoexcited electron-emitting device of the present invention comprises a photoelectric conversion region formed by stacking a semiconductor region of one conductivity type, a semiconductor region of the opposite conductivity type, and a conductive region on a transparent electrode; The MIM-type electron-emitting device region composed of a metal layer and the MIM-type electron-emitting device region are formed and integrated on a light-transmitting substrate, and the electrodes of the photoelectric conversion region and the conductive region of the MIM-type electron-emitting device region are shared and provided. Providing an area for electrical insulation,
The configuration is simple and can be integrated. Further, the light conversion region is provided only in a region below the concave portion of the metal layer, which is an electron emission portion of the MIM type electron emission element, so as to efficiently emit electrons.
なお、前記凹部に仕事関数低下材料領域を形成すれ
ば、金属層から電子をより定エネルギーで放出させるこ
とができ、より電子放出効率を向上させることが可能と
なる。If a work function lowering material region is formed in the concave portion, electrons can be emitted from the metal layer with more constant energy, and the electron emission efficiency can be further improved.
［実施例］ 以下、本発明の実施例について図面を用いて詳細に説
明する。Examples Hereinafter, examples of the present invention will be described in detail with reference to the drawings.
第１図（ａ）は本発明の光励起電子放出素子の基本構
成を示す概略的部分断面図であり、第１図（ｂ）は金属
層の凹部の断面図である。FIG. 1A is a schematic partial cross-sectional view showing a basic configuration of a photoexcited electron-emitting device of the present invention, and FIG. 1B is a cross-sectional view of a concave portion of a metal layer.
第１図（ａ）において、ガラス等の光透過性基板１上
には、ITO等の透明電極２が形成される。この透明電極
２上には、部分的にＮ型半導体領域３が形成され、この
Ｎ型半導体領域３上にＰ型半導体領域４が形成され、さ
らに導電領域５が形成される。なお導電領域５としては
Al等の金属、Si等の半導体を用いる。透明電極２、Ｎ型
半導体領域３、Ｐ型半導体領域４、導電領域５は接合型
光電変換領域を構成する。In FIG. 1 (a), a transparent electrode 2 such as ITO is formed on a light transmitting substrate 1 such as glass. An N-type semiconductor region 3 is partially formed on the transparent electrode 2, a P-type semiconductor region 4 is formed on the N-type semiconductor region 3, and a conductive region 5 is further formed. The conductive region 5
A metal such as Al or a semiconductor such as Si is used. The transparent electrode 2, the N-type semiconductor region 3, the P-type semiconductor region 4, and the conductive region 5 form a junction type photoelectric conversion region.
導電領域５上及び接合型光電変換領域の側部には絶縁
領域６が設けられており、導電領域５、Ｐ型半導体領域
４、Ｎ型半導体領域３としてSiを用いる場合、SiO2が好
適に用いられる。この絶縁領域６上にはAl,Au又はPt等
の金属層７が設けられ、この金属層７の上記接合型光電
変換領域上の領域には凹部９が形成される。この凹部９
には仕事関数低下材料領域８が形成されており、仕事関
数低下材料としては、アルカリ金属、アルカリ土類金属
等が用いられ、例えばCsが好適に用いられる。導電領域
5,絶縁領域6,金属層７はMIM型電子放出素子を構成す
る。An insulating region 6 is provided on the conductive region 5 and on the side of the junction-type photoelectric conversion region. When Si is used as the conductive region 5, the P-type semiconductor region 4, and the N-type semiconductor region 3, SiO 2 is preferably used. Used. A metal layer 7 of Al, Au, Pt, or the like is provided on the insulating region 6, and a recess 9 is formed in a region of the metal layer 7 on the junction type photoelectric conversion region. This recess 9
Is formed with a work function lowering material region 8. As the work function lowering material, an alkali metal, an alkaline earth metal, or the like is used, and for example, Cs is preferably used. Conductive area
5, the insulating region 6, and the metal layer 7 constitute a MIM type electron-emitting device.
本実施例において、導電領域５は接合型光電変換領域
の一方の電極であり、且つMIM型電子放出素子の導電層
となっており、共有されて簡易な構成となっている。絶
縁領域６はMIM型電子放出素子の絶縁層となり且つ、接
合型光電変換領域の側面部を他の領域と絶縁する絶縁領
域となっており、リーク等による特性劣化を防いでい
る。また本実施例においては、前述したように、光電変
換を行う接合型光電変換領域と電子放出を行うMIM型電
子放出領域とが積層されて一体化されるために集積化が
可能であり、且つ電子放出を行う凹部の下の領域にのみ
接合型光電変換領域が形成されているために、電子放出
を効率的に行うことが可能である。なお、凹部９に前記
の仕事関数低下材料領域８を設けて、より電子放出効率
を高めている。以上の効果による結果として撮像素子等
の多数の光励起電子放出源を有する光励起電子放出素子
を集積化して製造することが可能となる。In this embodiment, the conductive region 5 is one electrode of the junction-type photoelectric conversion region and also serves as a conductive layer of the MIM-type electron-emitting device. The insulating region 6 serves as an insulating layer of the MIM-type electron-emitting device and also serves as an insulating region that insulates the side surface of the junction-type photoelectric conversion region from other regions, thereby preventing deterioration of characteristics due to leakage or the like. Further, in the present embodiment, as described above, the junction-type photoelectric conversion region that performs photoelectric conversion and the MIM-type electron emission region that performs electron emission are stacked and integrated, and thus integration is possible, and Since the junction-type photoelectric conversion region is formed only in the region below the concave portion for emitting electrons, it is possible to efficiently emit electrons. The work function lowering material region 8 is provided in the concave portion 9 to further increase the electron emission efficiency. As a result of the above effects, it becomes possible to integrate and manufacture photoexcited electron-emitting devices having a large number of photoexcited electron-emitting sources such as an imaging device.
このような構造の本実施例において、導電領域５と金
属層７との間に電圧Ｖを印加し、光透過性基板１を通し
て接合型光電変換領域に光を照射すると、Ｐ型半導体領
域４とＮ型半導体領域３との間で光起電力が発生し、MI
M型電子放出素子を構成する導電領域５に電子が注入さ
れ、絶縁領域６をトンネリングした電子は仕事関数低下
材料領域８により、金属層７の仕事関数が低下した凹部
９から放出され、従来よりも低エネルギーで電子放出が
可能となるので効率的な電子放出が可能である。In this embodiment having such a structure, when a voltage V is applied between the conductive region 5 and the metal layer 7 and light is applied to the junction-type photoelectric conversion region through the light-transmitting substrate 1, the P-type semiconductor region 4 Photovoltaic power is generated between the N-type semiconductor region 3 and MI
Electrons are injected into the conductive region 5 constituting the M-type electron-emitting device, and electrons tunneling through the insulating region 6 are emitted from the recess 9 in which the work function of the metal layer 7 has been reduced by the work function lowering material region 8, which is smaller than that in the related art. Can emit electrons with low energy, so that efficient electron emission is possible.
第２図は本発明の光励起電子放出素子の一実施例を示
す概略的構成図である。FIG. 2 is a schematic diagram showing one embodiment of the photoexcited electron-emitting device of the present invention.
同図に示すように、金属層７には多数の凹部９が設け
られており、それぞれにMIM型電子放出領域及び接合型
電子放出領域が設けられている。なお、各凹部９の間隔
は、μｍのオーダーに設定することができる。As shown in the figure, a large number of recesses 9 are provided in a metal layer 7, each of which is provided with a MIM type electron emission region and a junction type electron emission region. The interval between the concave portions 9 can be set to the order of μm.
［発明の効果］ 以上詳細に説明したように、本発明の光励起電子放出
素子は、光電変換領域と、MIM型電子放出素子領域とを
一体化し、且つ光電変換領域の電極とMIM型電子放出素
子領域の電極とを導電領域で共有して同一電極とすると
ともに絶縁領域を設けて電気的絶縁を行い、簡易で集積
化の可能な構成とすることができる。また、光電変換領
域を前記MIM型電子放出素子の電子放出部たる金属層の
凹部の下の領域にのみ設け、効率的に電子放出を行わせ
ることができる。その結果として、撮像素子等の多数の
光励起電子放出源を有する光励起電子放出素子を集積化
して製造することが可能となる。[Effects of the Invention] As described in detail above, the photoexcited electron-emitting device of the present invention integrates the photoelectric conversion region and the MIM-type electron-emitting device region, and the electrode of the photoelectric conversion region and the MIM-type electron-emitting device. The electrodes in the region are shared with the conductive region to be the same electrode, and the insulating region is provided to provide electrical insulation, so that a configuration that can be easily integrated can be provided. Further, the photoelectric conversion region is provided only in the region below the concave portion of the metal layer, which is the electron emission portion of the MIM type electron emission element, so that the electrons can be efficiently emitted. As a result, it becomes possible to integrate and manufacture a photoexcited electron emission device having a large number of photoexcited electron emission sources such as an imaging device.
なお、前記凹部に仕事関数低下材料領域を形成すれ
ば、金属層から電子をより低エネルギーで放出させるこ
とができ、より電子放出効率を向上させることが可能と
なる。If a work function lowering material region is formed in the recess, electrons can be emitted from the metal layer with lower energy, and the electron emission efficiency can be further improved.
第１図は本発明の光励起電子放出素子の基本構成を示す
説明図である。 第２図は本発明の光励起電子放出素子の一実施例を示す
概略的構成図である。 第３図は、MIM型電子放出素子の一般的な構成を示す模
式図である。 第４図は、従来のMIM型電子放出素子の概略的断面図で
ある。 １…光透過性基板 ２…透明電極 ３…Ｎ型半導体領域 ４…Ｐ型半導体領域 ５…導電領域 ６…絶縁領域 ７…金属層 ８…仕事関数低下材料領域 ９…凹部FIG. 1 is an explanatory diagram showing a basic configuration of a photoexcited electron-emitting device according to the present invention. FIG. 2 is a schematic diagram showing one embodiment of the photoexcited electron-emitting device of the present invention. FIG. 3 is a schematic diagram showing a general configuration of a MIM type electron-emitting device. FIG. 4 is a schematic sectional view of a conventional MIM type electron-emitting device. DESCRIPTION OF SYMBOLS 1 ... Light-transmitting substrate 2 ... Transparent electrode 3 ... N-type semiconductor region 4 ... P-type semiconductor region 5 ... Conductive region 6 ... Insulating region 7 ... Metal layer 8 ... Work function lowering material region 9 ... Concave portion
フロントページの続き (72)発明者 菅田 正夫 東京都大田区下丸子３丁目30番２号 キ ヤノン株式会社内 (72)発明者 下田 勇 東京都大田区下丸子３丁目30番２号 キ ヤノン株式会社内 (72)発明者 奥貫 昌彦 東京都大田区下丸子３丁目30番２号 キ ヤノン株式会社内 (56)参考文献 特開 昭62−226530（ＪＰ，Ａ) 特開 昭62−299088（ＪＰ，Ａ) 特公 昭47−33537（ＪＰ，Ｂ１) 特公 昭43−3041（ＪＰ，Ｂ１)Continuation of the front page (72) Inventor Masao Suga 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Isamu 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Masahiko Okunuki 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-62-226530 (JP, A) JP-A-62-299088 (JP, A) JP-B-47-33537 (JP, B1) JP-B-43-3041 (JP, B1)
Claims (5)
域と、 該複数の光電変換領域を互いに分離するように配置され
た絶縁領域と、 前記絶縁領域と前記光電変換領域上に絶縁膜を介して設
けられた電子放出部となる金属膜とを有することを特徴
とする光励起電子放出素子。A plurality of photoelectric conversion regions formed on a transparent electrode; an insulating region arranged to separate the plurality of photoelectric conversion regions from each other; and an insulating film on the insulating region and the photoelectric conversion region. And a metal film serving as an electron-emitting portion provided through the light-emitting device.
れたものであることを特徴とする特許請求の範囲第１項
記載の光励起電子放出素子。2. The photoexcited electron-emitting device according to claim 1, wherein said transparent electrode is formed on a light-transmitting substrate.
域、反対導電型半導体領域、導電領域、を順に積層して
成る積層構造を有し、 上記絶縁領域は、該光電変換領域と上記金属膜の間にも
存在することを特徴とする特許請求の範囲第１項又は第
２項記載の光励起電子放出素子。3. The photoelectric conversion region has a laminated structure in which a semiconductor region of one conductivity type, a semiconductor region of the opposite conductivity type, and a conductive region are laminated in this order. 3. The photo-excited electron-emitting device according to claim 1, wherein the photo-excited electron-emitting device is also present between the films.
凹部が設けられていることを特徴とする特許請求の範囲
第１〜３項のいずれかに記載の光励起電子放出素子。4. The method according to claim 1, wherein the metal film is provided above the photoelectric conversion region.
The photoexcited electron-emitting device according to any one of claims 1 to 3, wherein a concave portion is provided.
低下材料領域を設けたことを特徴とする特許請求の範囲
第４項記載の光励起電子放出素子。5. A photoexcited electron-emitting device according to claim 4, wherein a work function lowering material region is provided in the concave portion provided in said metal film.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28424086A JP2601462B2 (en) | 1986-12-01 | 1986-12-01 | Photoexcited electron-emitting device |
| EP87113260A EP0259878B1 (en) | 1986-09-11 | 1987-09-10 | Electron emission element |
| DE19873752064 DE3752064T2 (en) | 1986-09-11 | 1987-09-10 | Electron emitting element |
| US08/094,404 US5304815A (en) | 1986-09-11 | 1993-07-21 | Electron emission elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28424086A JP2601462B2 (en) | 1986-12-01 | 1986-12-01 | Photoexcited electron-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63141235A JPS63141235A (en) | 1988-06-13 |
| JP2601462B2 true JP2601462B2 (en) | 1997-04-16 |
Family
ID=17675980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28424086A Expired - Fee Related JP2601462B2 (en) | 1986-09-11 | 1986-12-01 | Photoexcited electron-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2601462B2 (en) |
-
1986
- 1986-12-01 JP JP28424086A patent/JP2601462B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63141235A (en) | 1988-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4984034A (en) | Non-single-crystalline light emitting semiconductor device matrix with insulation | |
| TW571448B (en) | Light-emitting diode array | |
| US20090321775A1 (en) | LED with Reduced Electrode Area | |
| JP5137563B2 (en) | Horizontal configuration electro-optic device | |
| TW419834B (en) | Photovoltaic generator | |
| JPH0669532A (en) | Semiconductor integrated device | |
| JPH05152596A (en) | Solar cell module | |
| US4868614A (en) | Light emitting semiconductor device matrix with non-single-crystalline semiconductor | |
| JPS6161270B2 (en) | ||
| CN111599899B (en) | Light emitting diode, driving method thereof, light source device and electronic equipment | |
| JP2601462B2 (en) | Photoexcited electron-emitting device | |
| JPS62133634A (en) | High performance photoelectric cathode | |
| US4197552A (en) | Luminescent semiconductor devices | |
| JP3212686B2 (en) | Semiconductor light emitting device | |
| JP2603233B2 (en) | Optical switching electron-emitting device | |
| KR970063851A (en) | Vertical laser emitting cavity surface with low resistive upper emitting ridge doped with p-type lower mirror and method of manufacturing the same | |
| JP3368825B2 (en) | Solar cell | |
| US20230052837A1 (en) | Photoelectric conversion device | |
| JPH0521354B2 (en) | ||
| JP3214869B2 (en) | Optical function element with reset function | |
| KR101901173B1 (en) | Ultra violet luminous element and package | |
| JPH0831614B2 (en) | Solar cell | |
| JPH0539638Y2 (en) | ||
| JPS6329428B2 (en) | ||
| JPS6066878A (en) | Photodetector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |